ATE475985T1 - Verfahren zur ätzung von polysilizium mit einer verbesserten homogenität und einer reduzierten ätzratevariation - Google Patents

Verfahren zur ätzung von polysilizium mit einer verbesserten homogenität und einer reduzierten ätzratevariation

Info

Publication number
ATE475985T1
ATE475985T1 AT01920490T AT01920490T ATE475985T1 AT E475985 T1 ATE475985 T1 AT E475985T1 AT 01920490 T AT01920490 T AT 01920490T AT 01920490 T AT01920490 T AT 01920490T AT E475985 T1 ATE475985 T1 AT E475985T1
Authority
AT
Austria
Prior art keywords
chamber
substrate
etching
rate
plasma
Prior art date
Application number
AT01920490T
Other languages
English (en)
Inventor
Tuqiang Ni
Kenji Takeshita
Tom Choi
Frank Lin
Wenli Collison
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE475985T1 publication Critical patent/ATE475985T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT01920490T 2000-03-31 2001-03-16 Verfahren zur ätzung von polysilizium mit einer verbesserten homogenität und einer reduzierten ätzratevariation ATE475985T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/540,549 US6514378B1 (en) 2000-03-31 2000-03-31 Method for improving uniformity and reducing etch rate variation of etching polysilicon
PCT/US2001/008618 WO2001075958A2 (en) 2000-03-31 2001-03-16 Method for improving uniformity and reducing etch rate variation of etching polysilicon

Publications (1)

Publication Number Publication Date
ATE475985T1 true ATE475985T1 (de) 2010-08-15

Family

ID=24155925

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01920490T ATE475985T1 (de) 2000-03-31 2001-03-16 Verfahren zur ätzung von polysilizium mit einer verbesserten homogenität und einer reduzierten ätzratevariation

Country Status (9)

Country Link
US (1) US6514378B1 (de)
EP (1) EP1269529B1 (de)
JP (1) JP4907827B2 (de)
CN (1) CN1230879C (de)
AT (1) ATE475985T1 (de)
AU (1) AU2001247537A1 (de)
DE (1) DE60142685D1 (de)
TW (1) TWI249205B (de)
WO (1) WO2001075958A2 (de)

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CN109119373A (zh) * 2017-06-23 2019-01-01 北京北方华创微电子装备有限公司 压环组件和反应腔室
CN108998834A (zh) * 2018-07-26 2018-12-14 芜湖凯兴汽车电子有限公司 一种传感器单晶硅刻蚀装置
KR20240093987A (ko) 2021-10-29 2024-06-24 램 리써치 코포레이션 기판 프로세싱에서 균일성을 제어하기 위한 위상 어레이 안테나들 (phased array antennas) 및 방법들
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CN119432382A (zh) * 2024-09-24 2025-02-14 湖北兴福电子材料股份有限公司 一种多晶硅蚀刻液

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Also Published As

Publication number Publication date
EP1269529B1 (de) 2010-07-28
WO2001075958A2 (en) 2001-10-11
EP1269529A2 (de) 2003-01-02
CN1426597A (zh) 2003-06-25
CN1230879C (zh) 2005-12-07
TWI249205B (en) 2006-02-11
US6514378B1 (en) 2003-02-04
JP2003529931A (ja) 2003-10-07
DE60142685D1 (de) 2010-09-09
WO2001075958A3 (en) 2002-01-03
JP4907827B2 (ja) 2012-04-04
AU2001247537A1 (en) 2001-10-15

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