ATE475985T1 - Verfahren zur ätzung von polysilizium mit einer verbesserten homogenität und einer reduzierten ätzratevariation - Google Patents

Verfahren zur ätzung von polysilizium mit einer verbesserten homogenität und einer reduzierten ätzratevariation

Info

Publication number
ATE475985T1
ATE475985T1 AT01920490T AT01920490T ATE475985T1 AT E475985 T1 ATE475985 T1 AT E475985T1 AT 01920490 T AT01920490 T AT 01920490T AT 01920490 T AT01920490 T AT 01920490T AT E475985 T1 ATE475985 T1 AT E475985T1
Authority
AT
Austria
Prior art keywords
chamber
substrate
etching
rate
plasma
Prior art date
Application number
AT01920490T
Other languages
English (en)
Inventor
Tuqiang Ni
Kenji Takeshita
Tom Choi
Frank Lin
Wenli Collison
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE475985T1 publication Critical patent/ATE475985T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT01920490T 2000-03-31 2001-03-16 Verfahren zur ätzung von polysilizium mit einer verbesserten homogenität und einer reduzierten ätzratevariation ATE475985T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/540,549 US6514378B1 (en) 2000-03-31 2000-03-31 Method for improving uniformity and reducing etch rate variation of etching polysilicon
PCT/US2001/008618 WO2001075958A2 (en) 2000-03-31 2001-03-16 Method for improving uniformity and reducing etch rate variation of etching polysilicon

Publications (1)

Publication Number Publication Date
ATE475985T1 true ATE475985T1 (de) 2010-08-15

Family

ID=24155925

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01920490T ATE475985T1 (de) 2000-03-31 2001-03-16 Verfahren zur ätzung von polysilizium mit einer verbesserten homogenität und einer reduzierten ätzratevariation

Country Status (9)

Country Link
US (1) US6514378B1 (de)
EP (1) EP1269529B1 (de)
JP (1) JP4907827B2 (de)
CN (1) CN1230879C (de)
AT (1) ATE475985T1 (de)
AU (1) AU2001247537A1 (de)
DE (1) DE60142685D1 (de)
TW (1) TWI249205B (de)
WO (1) WO2001075958A2 (de)

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CN109119373A (zh) * 2017-06-23 2019-01-01 北京北方华创微电子装备有限公司 压环组件和反应腔室
CN108998834A (zh) * 2018-07-26 2018-12-14 芜湖凯兴汽车电子有限公司 一种传感器单晶硅刻蚀装置
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Also Published As

Publication number Publication date
AU2001247537A1 (en) 2001-10-15
CN1230879C (zh) 2005-12-07
TWI249205B (en) 2006-02-11
WO2001075958A3 (en) 2002-01-03
EP1269529A2 (de) 2003-01-02
EP1269529B1 (de) 2010-07-28
JP4907827B2 (ja) 2012-04-04
US6514378B1 (en) 2003-02-04
JP2003529931A (ja) 2003-10-07
WO2001075958A2 (en) 2001-10-11
DE60142685D1 (de) 2010-09-09
CN1426597A (zh) 2003-06-25

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