ATE431964T1 - In-situ nachätzungs prozess zur entfernung von photoresist und seitenwandspassivierungsrückständen - Google Patents

In-situ nachätzungs prozess zur entfernung von photoresist und seitenwandspassivierungsrückständen

Info

Publication number
ATE431964T1
ATE431964T1 AT00990333T AT00990333T ATE431964T1 AT E431964 T1 ATE431964 T1 AT E431964T1 AT 00990333 T AT00990333 T AT 00990333T AT 00990333 T AT00990333 T AT 00990333T AT E431964 T1 ATE431964 T1 AT E431964T1
Authority
AT
Austria
Prior art keywords
etch
sidewall passivation
residue
etch process
remove photoresist
Prior art date
Application number
AT00990333T
Other languages
English (en)
Inventor
Robert O'donnell
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE431964T1 publication Critical patent/ATE431964T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Removal Of Specific Substances (AREA)
AT00990333T 1999-12-27 2000-12-21 In-situ nachätzungs prozess zur entfernung von photoresist und seitenwandspassivierungsrückständen ATE431964T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/472,757 US6852636B1 (en) 1999-12-27 1999-12-27 Insitu post etch process to remove remaining photoresist and residual sidewall passivation
PCT/US2000/035165 WO2001048808A1 (en) 1999-12-27 2000-12-21 An insitu post etch process to remove remaining photoresist and residual sidewall passivation

Publications (1)

Publication Number Publication Date
ATE431964T1 true ATE431964T1 (de) 2009-06-15

Family

ID=23876824

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00990333T ATE431964T1 (de) 1999-12-27 2000-12-21 In-situ nachätzungs prozess zur entfernung von photoresist und seitenwandspassivierungsrückständen

Country Status (10)

Country Link
US (1) US6852636B1 (de)
EP (1) EP1243023B1 (de)
JP (2) JP2003518768A (de)
KR (1) KR100794538B1 (de)
CN (1) CN1210773C (de)
AT (1) ATE431964T1 (de)
AU (1) AU2737301A (de)
DE (1) DE60042246D1 (de)
TW (1) TW471060B (de)
WO (1) WO2001048808A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60119350T2 (de) * 2001-12-17 2007-03-15 Ami Semiconductor Belgium Bvba Methode zur Herstellung von Leiterbahnstrukturen
US6943039B2 (en) * 2003-02-11 2005-09-13 Applied Materials Inc. Method of etching ferroelectric layers
CN100444025C (zh) * 2004-07-12 2008-12-17 北京北方微电子基地设备工艺研究中心有限责任公司 光刻胶修整方法
US7597816B2 (en) * 2004-09-03 2009-10-06 Lam Research Corporation Wafer bevel polymer removal
US7413993B2 (en) * 2004-11-22 2008-08-19 Infineon Technologies Ag Process for removing a residue from a metal structure on a semiconductor substrate
JP4518986B2 (ja) * 2005-03-17 2010-08-04 東京エレクトロン株式会社 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体
US20060246720A1 (en) * 2005-04-28 2006-11-02 Chii-Ming Wu Method to improve thermal stability of silicides with additives
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
US20070227555A1 (en) * 2006-04-04 2007-10-04 Johnson Michael R Method to manipulate post metal etch/side wall residue
JP2014212310A (ja) * 2013-04-02 2014-11-13 東京エレクトロン株式会社 半導体デバイスの製造方法及び製造装置
JP6844083B2 (ja) * 2015-05-27 2021-03-17 サムコ株式会社 アフターコロージョン抑制処理方法
CN107464750B (zh) * 2017-08-23 2019-12-13 成都海威华芯科技有限公司 一种去除光刻胶底膜的工艺方法
US11749532B2 (en) 2021-05-04 2023-09-05 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR20240086974A (ko) * 2022-12-12 2024-06-19 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
US20250118532A1 (en) * 2023-10-09 2025-04-10 Tokyo Electron Limited System and method for plasma processing

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804431A (en) 1987-11-03 1989-02-14 Aaron Ribner Microwave plasma etching machine and method of etching
JP2831646B2 (ja) * 1988-03-25 1998-12-02 株式会社東芝 半導体装置の製造方法
US4985113A (en) 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
JPH0341728A (ja) * 1989-07-07 1991-02-22 Fujitsu Ltd 半導体装置の製造方法
EP0809283A3 (de) 1989-08-28 1998-02-25 Hitachi, Ltd. Verfahren zur Behandlung von Scheiben
US5198634A (en) 1990-05-21 1993-03-30 Mattson Brad S Plasma contamination removal process
JP2998173B2 (ja) * 1990-06-01 2000-01-11 松下電器産業株式会社 Ａｌエッチング方法
WO1992000601A1 (fr) 1990-06-27 1992-01-09 Fujitsu Limited Procede de fabrication d'un circuit integre a semi-conducteurs et appareil de fabrication correspondant
US5174856A (en) 1991-08-26 1992-12-29 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from previous metal etch
JPH05275325A (ja) * 1992-03-26 1993-10-22 Fujitsu Ltd 半導体装置の製造方法
US5462892A (en) 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
US5931721A (en) 1994-11-07 1999-08-03 Sumitomo Heavy Industries, Ltd. Aerosol surface processing
JPH08213366A (ja) * 1995-02-07 1996-08-20 Hitachi Ltd パターン形成方法およびパターン形成装置、ならびに半導体集積回路装置の製造方法および半導体製造装置
US5705443A (en) 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
WO1997011482A2 (en) 1995-09-05 1997-03-27 Lsi Logic Corporation Removal of halogens and photoresist from wafers
US5573961A (en) 1995-11-09 1996-11-12 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a body contact for a MOSFET device fabricated in an SOI layer
US5780359A (en) * 1995-12-11 1998-07-14 Applied Materials, Inc. Polymer removal from top surfaces and sidewalls of a semiconductor wafer
US5824604A (en) 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5712207A (en) 1996-02-29 1998-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Profile improvement of a metal interconnect structure on a tungsten plug
WO1997033300A1 (en) 1996-03-06 1997-09-12 Mattson Technology, Inc. Icp reactor having a conically-shaped plasma-generating section
CN1105944C (zh) 1996-03-06 2003-04-16 克拉里安特国际有限公司 获得剥脱成像图案的方法
US5908319A (en) 1996-04-24 1999-06-01 Ulvac Technologies, Inc. Cleaning and stripping of photoresist from surfaces of semiconductor wafers
US5882489A (en) 1996-04-26 1999-03-16 Ulvac Technologies, Inc. Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US5776832A (en) 1996-07-17 1998-07-07 Taiwan Semiconductor Manufacturing Company Ltd. Anti-corrosion etch process for etching metal interconnections extending over and within contact openings
US5779929A (en) 1996-10-07 1998-07-14 Lucent Technologies Inc. Thin film metallization for barium nanotitanate substrates
US5744395A (en) 1996-10-16 1998-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure
US5795831A (en) 1996-10-16 1998-08-18 Ulvac Technologies, Inc. Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US5899716A (en) 1997-05-19 1999-05-04 Vanguard International Semiconductor Corporation Oxygen ion implantation procedure to increase the surface area of an STC structure
JPH10335313A (ja) * 1997-06-03 1998-12-18 Hitachi Ltd プラズマエッチング方法
JPH113881A (ja) * 1997-06-11 1999-01-06 Fujitsu Ltd アッシング方法及び装置
US5846884A (en) 1997-06-20 1998-12-08 Siemens Aktiengesellschaft Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
US5946589A (en) 1997-10-09 1999-08-31 Chartered Semiconductor Manufacturing, Ltd. Elimination of void formation in aluminum based interconnect structures
US5849639A (en) 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants

Also Published As

Publication number Publication date
KR20020081234A (ko) 2002-10-26
TW471060B (en) 2002-01-01
EP1243023B1 (de) 2009-05-20
AU2737301A (en) 2001-07-09
US6852636B1 (en) 2005-02-08
KR100794538B1 (ko) 2008-01-17
CN1210773C (zh) 2005-07-13
JP2003518768A (ja) 2003-06-10
CN1434978A (zh) 2003-08-06
WO2001048808A1 (en) 2001-07-05
EP1243023A1 (de) 2002-09-25
DE60042246D1 (de) 2009-07-02
JP2012023385A (ja) 2012-02-02

Similar Documents

Publication Publication Date Title
ATE431964T1 (de) In-situ nachätzungs prozess zur entfernung von photoresist und seitenwandspassivierungsrückständen
WO2002049078A3 (en) Method for cleaning post-etch residues from a substrate
RU2002126255A (ru) Усовершенствование процесса удаления резиста в установке для травления диэлектрика с использованием пучка плазмы
TW200618104A (en) Post-etch treatment to remove residues
TW200501254A (en) Method for removing silicon oxide film and processing apparatus
WO2004027826A3 (en) System and method for removing material
KR950021173A (ko) 드라이에칭 장치의 에칭실을 클리닝하는 방법
WO2003010799A3 (en) Plasma ashing process
TW370691B (en) Method for removing photoresist and plasma etch residues
KR900014636A (ko) 시료처리 방법 및 장치
WO2000049649A3 (en) Method for preventing corrosion of a dielectric material
TW200601429A (en) Method and apparatus for photomask plasma etching
WO2005081289A3 (en) Process and apparatus for removing residues from semiconductor substrates
TW200502718A (en) Methods of removing photoresist from substrates
TW200501255A (en) Method for removal of residue from a substrate
SG46739A1 (en) Oxygen reactive ion etch (rie) plasma method for removing organic residues from semiconductives substrates
TW329023B (en) Non-plasma halogenated gas flow
JPH0897189A (ja) 真空処理装置のクリーニング方法
JP2007080850A5 (de)
TW200627543A (en) Plasma etching method
WO2002063670A3 (en) Method for removing copper from a wafer edge
JPH0885885A (ja) マイクロ波プラズマ装置のクリーニング方法
JPS5669382A (en) Surface treatment by plasma
WO1999013489A3 (en) Apparatus for improving etch uniformity and methods therefor
JPH08279486A (ja) プラズマ処理方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties