KR960035890A - 타이타늄 카보 나이트라이드층의 개질 방법 - Google Patents
타이타늄 카보 나이트라이드층의 개질 방법 Download PDFInfo
- Publication number
- KR960035890A KR960035890A KR1019950006706A KR19950006706A KR960035890A KR 960035890 A KR960035890 A KR 960035890A KR 1019950006706 A KR1019950006706 A KR 1019950006706A KR 19950006706 A KR19950006706 A KR 19950006706A KR 960035890 A KR960035890 A KR 960035890A
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- KR
- South Korea
- Prior art keywords
- layer
- plasma treatment
- ticn
- nitrogen gas
- titanium carbonitride
- Prior art date
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims abstract 9
- 229910052719 titanium Inorganic materials 0.000 title claims abstract 9
- 239000010936 titanium Substances 0.000 title claims abstract 9
- 150000004767 nitrides Chemical class 0.000 title claims 2
- 230000004048 modification Effects 0.000 title 1
- 238000012986 modification Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract 8
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract 4
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 claims abstract 2
- 229930006000 Sucrose Natural products 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims abstract 2
- 239000005720 sucrose Substances 0.000 claims abstract 2
- 238000009832 plasma treatment Methods 0.000 claims 10
- 238000002715 modification method Methods 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 230000002209 hydrophobic effect Effects 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Abstract
본 발명은 화학기상증착법을 이용한 타이타늄 카보 나이트라이드(TiCN)층 형성방법에 있어서, 상기 TiCN층을 질소개스와 수소개스의 혼합개스를 이용하여 플라즈마 처리하는 제1단계; 및 상기 TiCN층을 질소개스를 이용하여 플라즈마 처리하는 제2단계를 포함하는 것을 특징으로 하여, TiCN층에 내포된 불순물 양을 감소시키고, 이에 따라 비저항값을 감소시킬 수 있는 TiCN층의 개질 방법에 관한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (12)
- 화학기상증착법을 이용한 타이타늄 카보 나이트라이드(TiCN)층 형성방법에 있어서, 상기 TiCN층을 질소개스와 수소개스의 혼합개스를 이용하여 플라즈마 처리하는 제1단계를 포함하는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질방법.
- 제1항에 있어서, 상기 제1단계의 플라즈마 처리는, 질소개스 유량을 100~500sccm. 수소개스 유량을 100~500sccm. 온도를 200~500℃, 압력을 0.5~5torr, RF(Radio Frequency)파워를 200~700W으로 설정한 후 수행되는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질 방법.
- 제2항에 있어서,상기 플라즈마 처리는, 10~60초 동안 수행되는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질 방법.
- 제1항에 있어서, 상기 제1단계 수행후, 상기 TiCN층을 질소개스를 이용하여 플라즈마 처리하는 제2단계를 더 포함하는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질 방법.
- 제4항에 있어서, 상기 제2단계의 플라즈마 처리는, 질소개스 유량을 100~500sccm. 온도를 200~500℃, 압력을 0.5~5torr, RF파워를 200~700W으로 설정한 후 수행되는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질 방법.
- 제5항에 있어서, 상기 플라즈마 처리는, 10~60초 동안 수행되는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질 방법.
- 화학기상증착법을 이용한 타이타늄 카보 나이트라이드(TiCN)층 형성방법에 있어서, 상기 TiCN층을 질소개스를 이용하여 플라즈마 처리하는 단계를 포함하는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질방법.
- 제7항에 있어서, 상기 플라즈마 처리는, 질소개스의 유량을 100~500sccm. 온도를 200~500℃, 압력을 0.5~5torr, RF파워를 200~700W으로 설정한 후 수행되는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질 방법.
- 제8항에 있어서, 상기 플라즈마 처리는, 10~60초 동안 수행되는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질 방법.
- 화학기상증착법을 이용한 타이타늄 카보 나이트라이드(TiCN)층 형성방법에 있어서, 상기 TiCN층을 수소개스를 이용하여 플라즈마 처리하는 단계를 포함하는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질방법.
- 제10항에 있어서, 상기 플라즈마 처리는, 수소개스 유량을 100~500sccm. 온도를 200~500℃, 압력을 0.5~5torr, RF파워를 200~700W으로 설정한 후 수행되는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질 방법.
- 제11항에 있어서, 상기 플라즈마 처리는, 10~60초 동안 수행되는 것을 특징으로 하는 타이타늄 카보 나이트라이드층의 개질 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950006706A KR0164149B1 (ko) | 1995-03-28 | 1995-03-28 | 타이타늄 카보 나이트라이드층의 개질 방법 |
TW085100074A TW363223B (en) | 1995-03-28 | 1996-01-05 | A method for improving the quality of a titanium nitride layer including carbon and oxygen |
DE19600946A DE19600946B4 (de) | 1995-03-28 | 1996-01-12 | Verfahren zur Verbesserung der Qualität einer Titannitridschicht, die Kohlenstoff und Sauerstoff enthält |
JP8005239A JP2820915B2 (ja) | 1995-03-28 | 1996-01-16 | 窒化チタン膜形成方法 |
CN96101302A CN1057799C (zh) | 1995-03-28 | 1996-01-19 | 制备氮化钛层的方法 |
GB9605507A GB2299345B (en) | 1995-03-28 | 1996-03-15 | A method of making, and a device including, a titanium nitride layer |
US08/889,091 US6086960A (en) | 1995-03-28 | 1997-07-07 | Method for improving the quality of a titanium nitride layer including carbon and oxygen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950006706A KR0164149B1 (ko) | 1995-03-28 | 1995-03-28 | 타이타늄 카보 나이트라이드층의 개질 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960035890A true KR960035890A (ko) | 1996-10-28 |
KR0164149B1 KR0164149B1 (ko) | 1999-02-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950006706A KR0164149B1 (ko) | 1995-03-28 | 1995-03-28 | 타이타늄 카보 나이트라이드층의 개질 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6086960A (ko) |
JP (1) | JP2820915B2 (ko) |
KR (1) | KR0164149B1 (ko) |
CN (1) | CN1057799C (ko) |
DE (1) | DE19600946B4 (ko) |
GB (1) | GB2299345B (ko) |
TW (1) | TW363223B (ko) |
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JPH0722339A (ja) * | 1993-07-05 | 1995-01-24 | Toshiba Corp | 薄膜形成方法 |
US5480684A (en) * | 1994-09-01 | 1996-01-02 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds |
US5747116A (en) * | 1994-11-08 | 1998-05-05 | Micron Technology, Inc. | Method of forming an electrical contact to a silicon substrate |
US5576071A (en) * | 1994-11-08 | 1996-11-19 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds |
US5834068A (en) * | 1996-07-12 | 1998-11-10 | Applied Materials, Inc. | Wafer surface temperature control for deposition of thin films |
US5989652A (en) * | 1997-01-31 | 1999-11-23 | Tokyo Electron Limited | Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications |
US5906866A (en) * | 1997-02-10 | 1999-05-25 | Tokyo Electron Limited | Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface |
US5972179A (en) * | 1997-09-30 | 1999-10-26 | Lucent Technologies Inc. | Silicon IC contacts using composite TiN barrier layer |
-
1995
- 1995-03-28 KR KR1019950006706A patent/KR0164149B1/ko not_active IP Right Cessation
-
1996
- 1996-01-05 TW TW085100074A patent/TW363223B/zh not_active IP Right Cessation
- 1996-01-12 DE DE19600946A patent/DE19600946B4/de not_active Expired - Fee Related
- 1996-01-16 JP JP8005239A patent/JP2820915B2/ja not_active Expired - Fee Related
- 1996-01-19 CN CN96101302A patent/CN1057799C/zh not_active Expired - Fee Related
- 1996-03-15 GB GB9605507A patent/GB2299345B/en not_active Expired - Fee Related
-
1997
- 1997-07-07 US US08/889,091 patent/US6086960A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6086960A (en) | 2000-07-11 |
DE19600946B4 (de) | 2005-02-10 |
JP2820915B2 (ja) | 1998-11-05 |
JPH08337875A (ja) | 1996-12-24 |
GB9605507D0 (en) | 1996-05-15 |
GB2299345B (en) | 1998-10-14 |
CN1133900A (zh) | 1996-10-23 |
DE19600946A1 (de) | 1996-10-02 |
CN1057799C (zh) | 2000-10-25 |
GB2299345A (en) | 1996-10-02 |
TW363223B (en) | 1999-07-01 |
KR0164149B1 (ko) | 1999-02-01 |
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