KR960026267A - 고융점금속박막의 형성방법 - Google Patents

고융점금속박막의 형성방법 Download PDF

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KR960026267A
KR960026267A KR1019950055584A KR19950055584A KR960026267A KR 960026267 A KR960026267 A KR 960026267A KR 1019950055584 A KR1019950055584 A KR 1019950055584A KR 19950055584 A KR19950055584 A KR 19950055584A KR 960026267 A KR960026267 A KR 960026267A
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high melting
substrate
point metal
melting point
gas
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다까아끼 미야모또
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이데이 노브유끼
소니 가부시끼가이샤
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    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric

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Abstract

본 발명은 고융점금속 할로겐화물과 수소가스를 함유하는 가스혼합물을 플라즈마 화학적 기상성장법으로 처리함으로써 기판상에 고융점금속박막을 형성하는 방법이며, 그 방법은 그 프로세서의 초기단계에서 수소가스에 대한 고융점금속 할로겐화물의 혼합비를 비교적 작은값으로 조정하는 공정과, 프로세서의 초기단계 이후에, 수소가스에 대한 고융점금속 할로겐화물의 혼합비를 비교적 큰 값으로 조정하는 공정과, 를 포함하여 이루어진다.

Description

고융점금속박막의 형성방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 제1프로세스에 의해서, 제2도에 나타난 반도체 웨이퍼로부터 자연산화막을 제거한 후에 실리콘기판 표면의 하부분 위에 제1티탄막층이 형성된 반도체웨이퍼를 개략적으로 나타내는 단면도이다.

Claims (9)

  1. 고융점금속 할로겐화물과 수소가스를 함유하는 가스혼합물을 플라즈마 화학적 기상성장법을 받게 함으로써 기판상에 고유점금속박막을 형성하는 방법에 있어서, 프로세스의 초기단계에서 수소가스에 대한 상기 고융점금속 할로겐화물의 혼합비를 비교적 작은값으로 조정하는 공정과, 프로세스의 초기단계 이후, 수소가스에 대한 상기 고융점금속 할로겐화물의 상기 혼합비를 비교적 큰 값으로 조정하는 공정과, 를 포함하여 이루어지는 것을 특징으로 하는 고융점금속박막의 형성방법.
  2. 제1항에 있어서, 고융점금속박막의 형성에 앞서 상기 기판상의 지연산화막을 제거하는 공정과 상기 기판이 대기중에 접하게 되는 것을 방지하면서, 상기 고융점금속박막의 형성을 수행하는 공정과,를 더한층 포함하는 것을 특징으로 하는 고융점금속박막의 형성방법.
  3. 기판상에 고융점금속박막을 형성하는 방법에 있어서, 상기 기판상의 자연산화막을 미리 제거시키는 공정과, 상기 기판이 대기중에 접하게 되는 것을 방지하면서, 분자내에 적어도 질소원자를 함유하는 가스를 사용하여 상기 기판의 표면을 질화시키는 공정과, 고융점금속 할로겐화물과 수소가스를 함유하는 가스혼합물을 플라즈마 화학적 기상성장법을 받게 하여 상기 기판상에 상기 고융점금속박막을 퇴적시키는 공정과,를 포함하는 것을 특징으로 하는 고융점금속박막의 형성방법.
  4. 제3항에 있어서, 분자내에 적어도 질소원자를 함유하는 상기 가스는 질소가스와 암모니아가스와 히드라진가스로 구성되는 그룹에서 선택된 적어도 하나의 가스물질인 것을 특징으로 하는 고융점금속박막의 형성방법.
  5. 제2항에 있어서, 기판상의 상기 자연산화막은 상기 기판을 수소가스와 실란가스와 아르곤가스로 구성된 그룹에서 선택된 적어도 하나의 가스물질이 사용된 플라즈마처리를 받게 함으로써 제거되는 것을 특징으로 하는 고융점금속박막의 형성방법.
  6. 제1항에 있어서, 상기 기판내측의 실리콘물질이 그 표면의 적어도 한부분에 노출되는 것을 특징으로 하는 고융점금속박막의 형성방법.
  7. 제1항에 있어서, 상기 기판상의 알루미늄계 물질이 그 표면의 적어도 한부분에 노출되는 것을 특징으로 하는 고융점금속박막의 형성방법.
  8. 제7항에 있어서, 수소가스와 실란가스와 아르곤가스로 구성된 그룹에서 선택된 적어도 하나의 가스물질을 사용해서 상기 기판을 플라즈마처리하여 기판상의 상기 자연산화막을 제거시키는 공정과, 이어서 상기 기판의 표면을 수소가스와 상기 고융점금속 할로겐화물을 함유하는 가스혼합물로 처리하여 상기 기판의 알루미늄계 물질의 표면상에 퇴적된 자연산화막을 제거시키는 공정과,를 더한층 포함하는 것을 특징으로 하는 고융점금속박막의 형성방법.
  9. 제1항에 있어서, 상기 고융점금속박막은 티탄박막인 것을 특징으로 하는 고융점금속박막의 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950055584A 1994-12-26 1995-12-23 고융점금속박막의 형성방법 KR960026267A (ko)

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JP94-323187 1994-12-26
JP6323187A JPH08176823A (ja) 1994-12-26 1994-12-26 高融点金属薄膜の成膜方法

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