KR950021220A - 반도체 소자의 텅스텐 실리사이드 형성방법 - Google Patents
반도체 소자의 텅스텐 실리사이드 형성방법 Download PDFInfo
- Publication number
- KR950021220A KR950021220A KR1019930028140A KR930028140A KR950021220A KR 950021220 A KR950021220 A KR 950021220A KR 1019930028140 A KR1019930028140 A KR 1019930028140A KR 930028140 A KR930028140 A KR 930028140A KR 950021220 A KR950021220 A KR 950021220A
- Authority
- KR
- South Korea
- Prior art keywords
- tungsten silicide
- semiconductor device
- sih
- reactor
- deposited
- Prior art date
Links
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910021342 tungsten silicide Inorganic materials 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims abstract 6
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910052731 fluorine Inorganic materials 0.000 claims abstract 6
- 239000011737 fluorine Substances 0.000 claims abstract 6
- -1 fluorine ions Chemical class 0.000 claims abstract 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract 3
- 229920005591 polysilicon Polymers 0.000 claims abstract 3
- 238000000151 deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000012805 post-processing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 텅스텐 실리사이드를 형성하는 방법에 관한 것으로, 반도체 소자에서 소자의 속도(Speed)를 개선하기 위하여 폴리실리콘상에 텅스텐 실리사이드를 증착 형성할 때, 폴리실리콘이 형성된 웨이퍼를 반응로에 장착한 후, 반응로를 소정온도로 유지하고 WF6와 SiH4가스를 유입하여 텅스텐 실리사이드를 1차로 얇게 증착한 다음, 반응로에 SiH4가스를 다량 유입하여 1차로 증착된 텅스텐 실리사이드내에 존재하는 불소(F)이온을 증발시켜 제거하고, 다시 상기 1차로 증착된 텅스텐 실리사이드상에 2차로 상기 1차와 같은 분위기하에서 텅스텐 실리사이드를 증착한 후, 반응로에 SiH4가스를 다량 유입하여 불소이온을 제거하고, 이러한 공정을 텅스텐 실리사이드 소정두께가 될때까지 반복 실시하므로써, 텅스텐 실리사이드 내에 존재하는 불소이온으로 인한 후공정시 결함요인을 제거하므로 반도체 소자의 신뢰성을 증대시킬 수 있는 반도체 소자의 텅스텐 실리사이드를 형성하는 방법에 관해 기술된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1A도 및 제1B도는 본 발명에 의한 반도체 소자의 텅스텐 실리사이드를 형성하는 단계를 설명하기 위해 도시한 단면도.
Claims (2)
- 반도체 소자의 전기적 특성을 향상시키기 위한 텅스텐 실리사이드 형성방법에 있어서, 도전층으로 사용될 폴리실리콘(3)이 증착된 웨이퍼(10)를 반응로에 장착한 다음, WF6와 SiH4가스를 이용한 CVD방법으로 텅스텐 실리사이드(4)를 설정된 두께보다 얇게 1차 증착한 후, 반응로에 SiH4가스를 유입하여 상기 1차 증착된 텅스텐 실리사이드(4)를 SiH4처리하여 불소를 제거하고, 다시 2차 증착 및 SiH4처리 공정을 반복적으로 실시하면서 설정된 두께의 텅스텐 실리사이드를 완성하는 것을 특징으로 하는 반도체 소장의 텅스텐 실리사이드 형성방법.
- 제1항에 있어서, 상기 불소제거를 위하여 수소화합물을 유입하여 텅스텐 실리사이드의 불소이온을 제거하는 것을 특징으로 하는 반도체 소장의 텅스텐 실리사이드 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930028140A KR970009867B1 (ko) | 1993-12-17 | 1993-12-17 | 반도체 소자의 텅스텐 실리사이드 형성방법 |
US08/654,003 US5726096A (en) | 1993-12-17 | 1996-05-28 | Method for forming a tungsten silicide layer in a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930028140A KR970009867B1 (ko) | 1993-12-17 | 1993-12-17 | 반도체 소자의 텅스텐 실리사이드 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950021220A true KR950021220A (ko) | 1995-07-26 |
KR970009867B1 KR970009867B1 (ko) | 1997-06-18 |
Family
ID=19371366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930028140A KR970009867B1 (ko) | 1993-12-17 | 1993-12-17 | 반도체 소자의 텅스텐 실리사이드 형성방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5726096A (ko) |
KR (1) | KR970009867B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100332124B1 (ko) * | 1995-03-07 | 2002-09-04 | 주식회사 하이닉스반도체 | 반도체소자의게이트전극형성방법 |
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US5665611A (en) * | 1996-01-31 | 1997-09-09 | Micron Technology, Inc. | Method of forming a thin film transistor using fluorine passivation |
KR100272259B1 (ko) * | 1996-10-23 | 2000-12-01 | 김영환 | 반도체소자의실리사이드막의형성방법 |
JP4101901B2 (ja) * | 1997-04-25 | 2008-06-18 | シャープ株式会社 | 半導体装置の製造方法 |
US6210813B1 (en) | 1998-09-02 | 2001-04-03 | Micron Technology, Inc. | Forming metal silicide resistant to subsequent thermal processing |
US7262125B2 (en) * | 2001-05-22 | 2007-08-28 | Novellus Systems, Inc. | Method of forming low-resistivity tungsten interconnects |
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US7550381B2 (en) * | 2005-07-18 | 2009-06-23 | Applied Materials, Inc. | Contact clean by remote plasma and repair of silicide surface |
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US20100267230A1 (en) | 2009-04-16 | 2010-10-21 | Anand Chandrashekar | Method for forming tungsten contacts and interconnects with small critical dimensions |
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KR20200140391A (ko) | 2018-05-03 | 2020-12-15 | 램 리써치 코포레이션 | 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법 |
JP2022513479A (ja) | 2018-12-14 | 2022-02-08 | ラム リサーチ コーポレーション | 3d nand構造上の原子層堆積 |
WO2020210260A1 (en) | 2019-04-11 | 2020-10-15 | Lam Research Corporation | High step coverage tungsten deposition |
US10916431B2 (en) | 2019-04-16 | 2021-02-09 | International Business Machines Corporation | Robust gate cap for protecting a gate from downstream metallization etch operations |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5231056A (en) * | 1992-01-15 | 1993-07-27 | Micron Technology, Inc. | Tungsten silicide (WSix) deposition process for semiconductor manufacture |
US5364803A (en) * | 1993-06-24 | 1994-11-15 | United Microelectronics Corporation | Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure |
-
1993
- 1993-12-17 KR KR1019930028140A patent/KR970009867B1/ko not_active IP Right Cessation
-
1996
- 1996-05-28 US US08/654,003 patent/US5726096A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100332124B1 (ko) * | 1995-03-07 | 2002-09-04 | 주식회사 하이닉스반도체 | 반도체소자의게이트전극형성방법 |
Also Published As
Publication number | Publication date |
---|---|
US5726096A (en) | 1998-03-10 |
KR970009867B1 (ko) | 1997-06-18 |
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