JP5211503B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5211503B2 JP5211503B2 JP2007036377A JP2007036377A JP5211503B2 JP 5211503 B2 JP5211503 B2 JP 5211503B2 JP 2007036377 A JP2007036377 A JP 2007036377A JP 2007036377 A JP2007036377 A JP 2007036377A JP 5211503 B2 JP5211503 B2 JP 5211503B2
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- Prior art keywords
- layer
- forming
- semiconductor device
- silicide
- film
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- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 229910021332 silicide Inorganic materials 0.000 claims description 65
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- 239000010936 titanium Substances 0.000 claims description 63
- 239000010949 copper Substances 0.000 claims description 57
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- 238000000034 method Methods 0.000 claims description 44
- 229910052802 copper Inorganic materials 0.000 claims description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 38
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 27
- 229910052719 titanium Inorganic materials 0.000 claims description 27
- 238000005229 chemical vapour deposition Methods 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 13
- 229910007991 Si-N Inorganic materials 0.000 claims description 10
- 229910006294 Si—N Inorganic materials 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
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- 238000000137 annealing Methods 0.000 claims description 4
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- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
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- 229910052751 metal Inorganic materials 0.000 description 21
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- 230000001133 acceleration Effects 0.000 description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 9
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- 239000012495 reaction gas Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- -1 arsenic ions Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
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- 150000002222 fluorine compounds Chemical class 0.000 description 2
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- 239000011261 inert gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
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- 239000000243 solution Substances 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
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- 229910016347 CuSn Inorganic materials 0.000 description 1
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
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- 229910008938 W—Si Inorganic materials 0.000 description 1
- OWXLRKWPEIAGAT-UHFFFAOYSA-N [Mg].[Cu] Chemical compound [Mg].[Cu] OWXLRKWPEIAGAT-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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Description
まず、図16(a)において、シリコン基板100内に形成された素子分離絶縁膜101に囲まれた領域にはMOSトランジスタ102が形成されている。また、MOSトランジスタ102とシリコン基板100は層間絶縁膜103に覆われている。
図1〜図14は、本発明の実施形態に係る半導体装置の形成工程を示す断面図である。
まず、半導体基板であるシリコン基板に素子分離層とウェルを形成する工程について説明する。
図15によれば、銅プラグのグルー層としてTi層をCVD法で形成することによりコンタクト抵抗が1/3程度に低下することがわかる。また、銅プラグのバリア層としてTa層を形成した場合とTaSiN層を形成した場合を比較すると、Ta層の方がコンタクト抵抗は低くなった。
(付記1)半導体基板上にシリサイド層を形成する工程と、前記シリサイド層上に絶縁膜を形成する工程と、前記絶縁膜に、前記シリサイド層に達するホールを形成する工程と、前記ホールの底面及び内壁面にチタン層を形成する工程と、銅拡散防止用のバリア層を前記ホール内の前記チタン層上に形成する工程と、銅層を前記ホール内に埋め込む工程とを有することを特徴とする半導体装置の製造方法。
(付記2)前記チタン層は、化学気相成長法により形成されることを特徴とする付記1に記載の半導体装置の製造方法。
(付記3)前記化学気相成長法は、ソースガスがTiCl4、TiBr4のいずれかを含むことを特徴とする付記2に記載の半導体装置の製造方法。
(付記4)前記化学気相成長法は、さらに不活性ガスを含んで行なわれることを特徴とする付記3に記載の半導体装置の製造方法。
(付記5)前記半導体基板を150℃以上、700℃以下の範囲の温度で加熱しながら、前記チタン層を成長することを特徴とする付記2乃至付記4のいずれかに記載の半導体装置の製造方法。
(付記6)前記チタン層は、前記ホールの側壁での厚さが1nm〜10nmで成長されることを特徴とする付記1乃至付記5のいずれかに記載の半導体装置の製造方法。
(付記7)前記チタン層を形成する前に、前記ホール内と前記シリサイド層の表面をクリーニングする工程を有することを特徴とする付記1乃至付記6のいずれかに記載の半導体装置の製造方法。
(付記8)前記ホール内と前記シリサイド層の前記表面をクリーニングする工程は、アルゴンイオンによる物理的スパッタクリーニングか、フッ素化合物ガスを用いた化学的クリーニングのいずれかであることを特徴とする付記7に記載の半導体装置の製造方法。
(付記9)前記チタン層を形成した後に、前記半導体基板を水素雰囲気でアニールすることを特徴とする付記1乃至付記8のいずれかに記載の半導体装置の製造方法。
(付記10)前記バリア層は、Ta、TiN、TaN、Ru、WN、W−N−C、Ti−Si−Nx(0≦x<1)、Ta−Si−Nx(0≦x<1)、W−Si−Nx(0≦x<1)のうち少なくとも1つ選択される膜であることを特徴とする付記1乃至付記9のいずれかに記載の半導体装置の製造方法。
(付記11)前記バリア層の厚さは、1nm以上、20nm以下であることを特徴とする付記1乃至付記10のいずれかに記載の半導体装置の製造方法。
(付記12)前記ホール内での前記銅層の埋め込みは、前記ホール内で前記バリア層上にシード層を形成する工程を有することを特徴とする付記1乃至付記11のいずれかに記載の半導体装置の製造方法。
(付記13)前記シード層は、Cu、Ru、Cu合金のいずれかであることを特徴とする付記12に記載の半導体装置の製造方法。
(付記14)前記絶縁膜の上面上の前記銅層、前記バリア層、前記チタン層は、化学機械研磨により除去されることを特徴とする付記1乃至付記13に記載の半導体装置の製造方法。
(付記15)前記シリサイド層は、ニッケルシリサイド、コバルトシリサイド、ニッケル合金のいずれか1つであることを特徴とする付記1乃至付記14のいずれかに記載の半導体装置の製造方法。
(付記16)前記ニッケル合金は、ニッケルとプラチナの合金であることを特徴とする付記15に記載の半導体装置の製造方法。
(付記17)前記シリサイド層は、前記半導体基板に形成されたMOSトランジスタのソース/ドレイン領域の表面に形成され、前記ソース/ドレイン領域は、前記半導体基板に絶縁材が埋め込まれた素子分離構造により分離され、前記ホールの底部は、前記シリサイド層及び前記シリサイド層に隣接する前記素子分離構造上に形成されていることを特徴とする付記1乃至付記16のいずれかに記載の半導体装置の製造方法。
(付記18)前記半導体基板に形成されたPMOSトランジスタのソース/ドレイン領域の表面にシリコンゲルマニウム層を形成する工程と、前記シリコンゲルマニウム層と金属の反応により前記シリサイド層を形成する工程とを有することを特徴とする付記1乃至付記17のいずれかに記載の半導体装置の製造方法。
(付記19)半導体基板と、前記半導体基板上に形成されたシリサイド層と、前記シリサイド層上に形成された絶縁膜と、前記絶縁膜に形成され、前記シリサイド層に達するホールと、前記ホールの内壁面及び底面に形成されたチタン層と、前記チタン層上に形成された銅拡散防止用のバリア層と、前記バリア層上に形成され、前記ホールを埋め込む銅層とを有することを特徴とする半導体装置。
(付記20)前記バリア層はTa、TiN、TaN、Ru、WN、W−N−C、Ti−Si−Nx(0≦x<1)、Ta−Si−Nx(0≦x<1)、W−Si−Nx(0≦x<1)のうち少なくとも1つ選択される膜であることを特徴とする付記19に記載の半導体装置。
4 Nウェル
5 Pウェル
7 STI
14g ゲート電極
21a,22a エクステンション領域
21、22 ソース/ドレイン領域
25 サイドウォール
28 凹部
29 SiGe層
32,34 シリサイド層
37 シリコン窒化膜
38 シリコン酸化膜
38a〜38f コンタクトホール
41 Ti層
42 バリア層
43 シード層
44 Cu層
44a〜44f プラグ
Claims (8)
- 半導体基板に絶縁材が埋め込まれた素子分離構造により分離され、前記半導体基板に形成されたMOSトランジスタのソース/ドレイン領域の表面に、シリサイド層を形成する工程と、
前記シリサイド層上に絶縁膜を形成する工程と、
前記シリサイド層及び前記シリサイド層に隣接する前記素子分離構造上に底部が位置し、前記シリサイド層に達するホールを、前記絶縁膜に形成する工程と、
前記ホールの底面及び内壁面にチタン層を化学気相成長法によって形成する工程と、
Ta、TaN、Ru、WN、W−N−C、Ti−Si−Nx(0≦x<1)、Ta−Si−Nx(0≦x<1)、W−Si−Nx(0≦x<1)のいずれかを有するバリア層を前記ホール内の前記チタン層上に形成する工程と、
銅層を前記ホール内に埋め込む工程と
を有することを特徴とする半導体装置の製造方法。 - 前記化学気相成長法は、ソースガスがTiCl4、TiBr4のいずれかを含むことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記半導体基板を150℃以上、700℃以下の範囲の温度で加熱しながら、前記チタン層を成長することを特徴とする請求項1又は請求項2に記載の半導体装置の製造方法。
- 前記チタン層は、前記ホールの側壁での厚さが1nm〜10nmで成長されることを特徴とする請求項1乃至請求項3のいずれかに記載の半導体装置の製造方法。
- 前記チタン層を形成する前に、前記ホール内と前記シリサイド層の表面をクリーニングする工程を有することを特徴とする請求項1乃至請求項4のいずれかに記載の半導体装置の製造方法。
- 前記チタン層を形成した後に、前記半導体基板を水素雰囲気でアニールすることを特徴とする請求項1乃至請求項5のいずれかに記載の半導体装置の製造方法。
- 前記シリサイド層は、ニッケルシリサイド、コバルトシリサイド、ニッケル合金のいずれか1つであることを特徴とする請求項1乃至請求項6のいずれかに記載の半導体装置の製造方法。
- 前記チタン層を形成する工程の後であって前記バリア層を形成する工程の前に、前記チタン層上にTiN層を形成する工程を更に有することを特徴とする請求項1乃至7のいずれかに記載の半導体装置の製造方法。
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US8258057B2 (en) * | 2006-03-30 | 2012-09-04 | Intel Corporation | Copper-filled trench contact for transistor performance improvement |
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