JP5343417B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP5343417B2 JP5343417B2 JP2008165449A JP2008165449A JP5343417B2 JP 5343417 B2 JP5343417 B2 JP 5343417B2 JP 2008165449 A JP2008165449 A JP 2008165449A JP 2008165449 A JP2008165449 A JP 2008165449A JP 5343417 B2 JP5343417 B2 JP 5343417B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000010949 copper Substances 0.000 claims abstract description 198
- 229910052751 metal Inorganic materials 0.000 claims abstract description 125
- 239000002184 metal Substances 0.000 claims abstract description 124
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000003870 refractory metal Substances 0.000 claims abstract description 39
- 229910052802 copper Inorganic materials 0.000 claims abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 170
- 239000011572 manganese Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 28
- 229910052715 tantalum Inorganic materials 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 229910052726 zirconium Inorganic materials 0.000 claims description 13
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 238000011049 filling Methods 0.000 claims description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 description 101
- 239000000956 alloy Substances 0.000 description 101
- 230000004888 barrier function Effects 0.000 description 95
- 229910018648 Mn—N Inorganic materials 0.000 description 51
- 239000011229 interlayer Substances 0.000 description 48
- 229910017566 Cu-Mn Inorganic materials 0.000 description 45
- 229910017871 Cu—Mn Inorganic materials 0.000 description 45
- 238000005530 etching Methods 0.000 description 32
- 238000009792 diffusion process Methods 0.000 description 22
- 239000010936 titanium Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 14
- 230000007547 defect Effects 0.000 description 13
- 238000009713 electroplating Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910017028 MnSi Inorganic materials 0.000 description 3
- 229910001199 N alloy Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 101100108883 Arabidopsis thaliana ANL2 gene Proteins 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- ICBUGLMSHZDVLP-UHFFFAOYSA-N [Si]=O.[Mn] Chemical compound [Si]=O.[Mn] ICBUGLMSHZDVLP-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017767 Cu—Al Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Description
このような多層配線構造では、下層の配線層と上層の配線層とが、層間絶縁膜中に形成されたビアコンタクトにより接続される。
その際、Cu配線パターンが層間絶縁膜に直接に接すると、Cu原子が層間絶縁膜中に拡散し、短絡などの問題を惹起するため、Cu配線パターンが形成される配線溝あるいはビアホールの側壁面および底面を、導電性の拡散バリア、いわゆるバリアメタル膜により覆い、Cu層を、かかるバリアメタル膜上に堆積することが一般になされている。バリアメタル膜としては、一般的にタンタル(Ta)やチタン(Ti)、タングステン(W)などの高融点金属、あるいはこれら高融点金属の導電性窒化物が用いられる。
最初に本発明の関連技術を説明する。
本発明では、Cu−Mn−N合金層を使うことにより、Mn原子のCu配線層中への拡散を効果的に抑制する。
[第2の実施形態]
図12A〜12Fは本発明の第2の実施形態によるCu配線パターンのダマシン法による形成工程を示す。ただし図中、先に説明した部分に対応する部分には同一の参照符号を付し、説明を省略する。
[第3の実施形態]
次に、本発明の第1あるいは第2の実施形態を多層配線構造を有する半導体装置の製造に適用した例を、本発明の第3の実施形態として説明する。
その結果、図13Kに示すように、前記Cu配線パターン28Cは、当初のCu−Mn−N合金層28Mが存在していた領域28c1に形成されたCu層と、当初のCu層28C1,28C2が存在していた領域28c2に形成されたCu層とより構成される。
前記層間絶縁膜52上には、SiNあるいはSiCよりなるエッチングストッパ膜53を介して、多孔質膜を含む無機あるいは有機絶縁膜よりなる層間絶縁膜54が形成されている。
(付記1)
半導体基板上方に形成された酸素を含む絶縁膜と、
前記絶縁膜に形成された凹部と、
前記凹部の内壁に形成された高融点金属膜と、
前記高融点金属膜上に形成された銅とマンガンと窒素を含む金属膜と、
前記金属膜上に形成され、前記凹部を充填する銅膜と、
を含む半導体装置。
(付記2)
前記金属膜は、単層または複数層よりなる付記1記載の半導体装置。
(付記3)
前記金属膜は、0.3nm〜10nmの膜厚を有する付記1または2記載の半導体装置。
(付記4)
前記高融点金属膜は、Ti,Ta,Zr,Ruから選択される少なくとも一つの元素を含む付記1〜3のうち、いずれか一項記載の半導体装置。
(付記5)
前記金属膜は、前記銅膜の近傍の第1の側に、前記第1の側と反対の第2の側におけるよりも多くの窒素を含む付記2〜4のうち、いずれか一項記載の半導体装置。
(付記6)
前記金属膜と前記銅膜との界面には酸素の濃集部が形成されており、前記銅膜中においてマンガンは、前記酸素の濃集部から300nm以内の領域に主として含まれる付記1〜5のうち、いずれか一項記載の半導体装置。
(付記7)
半導体基板上方に酸素を含む絶縁膜を形成する工程と、
前記絶縁膜に凹部を形成する工程と、
前記凹部の内壁に高融点金属膜を形成する工程と、
前記高融点金属膜上に、銅とマンガンと窒素を含む金属膜を形成する工程と、
前記金属膜を形成後、少なくとも前記凹部を埋める銅膜を形成する工程と、
を有する半導体装置の製造方法。
(付記8)
前記金属膜は、窒素含有雰囲気中にてスパッタリング法を用いて形成される付記7記載の半導体装置の製造方法。
(付記9)
さらに前記金属膜と前記銅膜との間に、銅からなるシード層を形成する工程を有する付記7または8記載の半導体装置の製造方法。
(付記10)
前記窒素含有雰囲気は、窒素ガスおよびアンモニアガスのいずれかを含む付記9記載の半導体装置の製造方法。
(付記11)
前記窒素含有雰囲気は、窒素ガスを7%以上の分圧で含む付記10記載の半導体装置の製造方法。
(付記12)
さらに前記絶縁膜上において前記銅膜の平坦化を行う工程を含む付記7〜11のうち、いずれか一項記載の半導体装置の製造方法。
11T,21T 凹部
12,22 バリアメタル膜
13,23M Cu−Mn合金層
14,24 Cu層
14A,24A Cuパターン
14B,24B Cu配線パターン
23,23N Cu−Mn−N合金層
23Ox 酸素濃集部
24b 領域
25,27 エッチングストッパ膜
26,28 層間絶縁膜
27V開口部
28C1 Cuシード層
28C2 Cu電解メッキ層
28B バリアメタル膜
Cu−Mn−N合金層
28T 配線溝
28C1,28C2 Cu領域
29 キャップ層
40 半導体装置
41A 素子領域
41I 素子分離構造
41a,41b,41c 拡散領域
42A,42B,42C ゲート絶縁膜
43A,43B,43C ゲート電極
44,44A,44B,44C 絶縁膜
44V1〜44V2,48V1〜48V3,56V1〜56V2,60V ビアホール
45,47,49,51,53,57,59,61 エッチングストッパ膜
46,48,50,52,54,56,58,60 層間絶縁膜
46C1〜46C2,50C1〜50C3,54C1〜54C2,58C1〜58C3 Cu配線パターン
46T1〜46T2,50T1〜50T3,54T1〜54T2,58T1〜58T3,62T 配線溝
46V1〜46V2,48V1〜48V3,54V1〜54V2,58V1〜58V3,62V Cuビアプラグ
46B1〜46B2,50B1〜50B3,54B1〜54B2,58B1〜58B3,62B バリアメタル膜
63 キャップ層
Claims (12)
- 半導体基板上方に形成された酸素を含む絶縁膜と、
前記絶縁膜に形成された凹部と、
前記凹部の内壁に形成された高融点金属膜と、
前記高融点金属膜上に形成された銅とマンガンと窒素を含む金属膜と、
前記金属膜上に形成され、前記凹部を充填する銅膜と、
を含む半導体装置。 - 前記金属膜は、単層または複数層よりなる請求項1記載の半導体装置。
- 前記金属膜は、0.3nm〜10nmの膜厚を有する請求項1または2記載の半導体装置。
- 前記高融点金属膜は、Ti,Ta,Zr,Ruから選択される少なくとも一つの元素を含む請求項1〜3のうち、いずれか一項記載の半導体装置。
- 前記金属膜は、前記銅膜の近傍の第1の側に、前記第1の側と反対の第2の側におけるよりも多くの窒素を含む請求項2〜4のうち、いずれか一項記載の半導体装置。
- 前記高融点金属膜は、1nm〜10nmの膜厚を有する請求項1〜5のうち、いずれか一項記載の半導体装置。
- 半導体基板上方に酸素を含む絶縁膜を形成する工程と、
前記絶縁膜に凹部を形成する工程と、
前記凹部の内壁に高融点金属膜を形成する工程と、
前記高融点金属膜上に、銅とマンガンと窒素を含む金属膜を形成する工程と、
前記金属膜を形成後、少なくとも前記凹部を埋める銅膜を形成する工程と、
を有する半導体装置の製造方法。 - 前記金属膜は、窒素含有雰囲気中にてスパッタリング法を用いて形成される請求項7記載の半導体装置の製造方法。
- 前記窒素含有雰囲気は、窒素ガスおよびアンモニアガスのいずれかを含む請求項8記載の半導体装置の製造方法。
- さらに前記金属膜と前記銅膜との間に、銅からなるシード層を形成する工程を有する請求項7〜9のうち、いずれか一項記載の半導体装置の製造方法。
- さらに前記絶縁膜上において前記銅膜の平坦化を行う工程を含む請求項7〜10のうち、いずれか一項記載の半導体装置の製造方法。
- 前記高融点金属膜を形成する工程において、前記高融点金属膜の膜厚を1nm〜10nmとする請求項7〜11のうち、いずれか一項記載の半導体装置の製造方法。
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TW098114009A TWI389209B (zh) | 2008-06-25 | 2009-04-28 | 半導體裝置及製造該裝置之方法 |
US12/431,944 US8067836B2 (en) | 2008-06-25 | 2009-04-29 | Semiconductor device with reduced increase in copper film resistance |
KR1020090045018A KR101116785B1 (ko) | 2008-06-25 | 2009-05-22 | 반도체 장치 및 그 제조방법 |
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US8852674B2 (en) | 2010-11-12 | 2014-10-07 | Applied Materials, Inc. | Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layers |
US8461683B2 (en) * | 2011-04-01 | 2013-06-11 | Intel Corporation | Self-forming, self-aligned barriers for back-end interconnects and methods of making same |
KR20120138074A (ko) * | 2011-06-14 | 2012-12-24 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법 |
CN102437144A (zh) * | 2011-12-06 | 2012-05-02 | 西安交通大学 | 一种Ru-RuO/Ru-Ge-Cu自形成双层非晶扩散阻挡层及其制备方法 |
US8765602B2 (en) | 2012-08-30 | 2014-07-01 | International Business Machines Corporation | Doping of copper wiring structures in back end of line processing |
US20140061915A1 (en) * | 2012-08-30 | 2014-03-06 | International Business Machines Corporation | Prevention of thru-substrate via pistoning using highly doped copper alloy seed layer |
US10396012B2 (en) * | 2016-05-27 | 2019-08-27 | International Business Machines Corporation | Advanced through substrate via metallization in three dimensional semiconductor integration |
US9786605B1 (en) | 2016-05-27 | 2017-10-10 | International Business Machines Corporation | Advanced through substrate via metallization in three dimensional semiconductor integration |
US10312181B2 (en) | 2016-05-27 | 2019-06-04 | International Business Machines Corporation | Advanced through substrate via metallization in three dimensional semiconductor integration |
US20210114923A1 (en) * | 2018-04-20 | 2021-04-22 | Corning Incorporated | Systems and methods for adhering copper interconnects in a display device |
US20220005860A1 (en) * | 2018-12-04 | 2022-01-06 | Sony Semiconductor Solutions Corporation | Semiconductor apparatus and electronic equipment |
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