KR960034488A - 고온 저항을 개선시키기 위한 티타늄 질화물 층의 처리방법 - Google Patents

고온 저항을 개선시키기 위한 티타늄 질화물 층의 처리방법 Download PDF

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Publication number
KR960034488A
KR960034488A KR1019960006596A KR19960006596A KR960034488A KR 960034488 A KR960034488 A KR 960034488A KR 1019960006596 A KR1019960006596 A KR 1019960006596A KR 19960006596 A KR19960006596 A KR 19960006596A KR 960034488 A KR960034488 A KR 960034488A
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South Korea
Prior art keywords
titanium nitride
aluminum
layer
temperature
nitride layer
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KR1019960006596A
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English (en)
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킹-타이 난 케니
씨이. 모즐리 로드릭
Original Assignee
제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR960034488A publication Critical patent/KR960034488A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 체적비로 약 3%내지 15%의 산소를 함유하고 있는 질소 분위기내에서 티타늄 질화물 피막을 가열 시키는 것을 포함하는 알루미늄 고온 후중착에 견딜 수 있도록 화학 진공중착된 티타늄 질화물 층을 안정시키는 방법에 관한 것이다. 알루미늄 처리된 티타늄 질화물 피막상으로 중착될 때, 상기 티타늄 질화물의 방벽재료들은 적어도 약 575℃의 온도에 이르기까지 견딜 수 있다.

Description

고온 저항을 개선시키기 위한 티타늄 질화물 츠의 처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. 약 400℃이상의 온도에 대하여 안정화될 수 있는 화학 진공증착된 티타늄 질화물 층을 처리하는 방법으로서, 유기-금속 티타늄 혼합물로부터 티타늄 질화물 피막을 증착하는 단계와, 그리고 체적비로 약 3% 내지 15%의 산소를 함유하고 있는 질소 분위기내에서 상기 티타늄 질화물 피막을 어니일링시키는 단계를 포함하고 있는 방법.
  2. 제1항에 있어서, 상기 어니일링 단계가 금속어니일링 챔버내에서 실행되어지는 방법.
  3. 제1항에 있어서, 상기 어니일링 단계가 약 450℃ 내지 800℃의 온도에서 실행되는 방법.
  4. 제1항에 있어서, 상기 어니일링 단계중에 압력이 적어도 1.33322*102pa(1 Torr) 이상인 방법.
  5. 제1항에 있어서, 상기 어니일링 단계 후에 알루미늄 층이나 알루미늄 합금층이 상기 어니일링 티타늄 질화물층 상으로 증착되는 단계를 더 포함하는 방법.
  6. 제1항에 있어서, 상기 화학 진공증착된 티타늄 질화물이 실리콘 회로기판 상으로 증착되는 방법.
  7. 제7항에 있어서, 상기 화학 진공증착된 티타늄 질화물 층이 실리콘 회로기판 상으로 증착되는 방법.
  8. 제7항에 있어서, 상기 실리콘 회로기판, 상기 화학 진공증착된 티타늄 질화물, 및 상기 알루미늄 층이나 알루미늄 합금층을 알루미늄 유동온도 이상으로 가열시키는 단계를 더 포함하고 있는 방법.
  9. 제8항에 있어서, 상기 알루미늄 층이나 알루미늄 합금층이 550℃이상의 온도로 가열되는 방법.
  10. 제9항에 있어서, 상기 알루미늄 층이나 알루미늄 합금층이 575℃이상의 온도로 가열되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960006596A 1995-03-13 1996-03-13 고온 저항을 개선시키기 위한 티타늄 질화물 층의 처리방법 KR960034488A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40308595A 1995-03-13 1995-03-13
US08/403,085 1995-03-13

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KR960034488A true KR960034488A (ko) 1996-10-22

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US (1) US5943600A (ko)
EP (1) EP0732731A3 (ko)
JP (1) JPH08330256A (ko)
KR (1) KR960034488A (ko)

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EP0732731A3 (en) 1997-10-08
JPH08330256A (ja) 1996-12-13
EP0732731A2 (en) 1996-09-18
US5943600A (en) 1999-08-24

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