KR890011069A - 세라믹 피복물을 기재위에 형성시키는 방법 - Google Patents
세라믹 피복물을 기재위에 형성시키는 방법 Download PDFInfo
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- KR890011069A KR890011069A KR1019880017555A KR880017555A KR890011069A KR 890011069 A KR890011069 A KR 890011069A KR 1019880017555 A KR1019880017555 A KR 1019880017555A KR 880017555 A KR880017555 A KR 880017555A KR 890011069 A KR890011069 A KR 890011069A
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- Prior art keywords
- coating
- substrate
- coated
- vapor deposition
- chemical vapor
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- 239000000758 substrate Substances 0.000 title claims 9
- 238000005524 ceramic coating Methods 0.000 title claims 4
- 238000000576 coating method Methods 0.000 claims 10
- 239000011248 coating agent Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 230000004888 barrier function Effects 0.000 claims 3
- 239000011347 resin Substances 0.000 claims 3
- 229920005989 resin Polymers 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 230000000087 stabilizing effect Effects 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 230000009969 flowable effect Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
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- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (11)
- (a) 하이드로겐 실세스퀴옥산 수지를 포함하는 유동성 기질에 적용하고 ; (b) 수지 용액을 건조시켜 하이드로겐 실세스퀴옥산 수지를 기질 위에 부착시키며 ; (c) 피복된 기질을 암모니아 대기 속에서 세라믹 피복물을 기질 위에 형성시키기에 충분한 온도로 가열함을 포함하여 세라믹 피복물을 기질 위에 형성하는 방법.
- 제 1 항에 있어서, (D)(ⅰ) 실리콘 피복물, (ⅱ) 실리콘-탄소 피복물, (ⅲ) 실리콘-질소 피복물 및 (ⅳ) 실리콘-탄소-질소 피복물로 이루어진 그룹중에서 선택된 표면 안정화 피복물을 (a) 화학 증착 , (b) 플라스마 증진된 화학 증착 및 (c) 예비세라믹 중합체 피복물의 적용과 예비세라믹 중합체 피복물의 후속 세라믹화로 이루어진 그룹중에서 선택된 방법으로 세라믹 피복물을 적용함을 추가로 포함하는 방법.
- 제 2 항에 있어서, (E)(ⅰ) 실리콘 피복물, (ⅱ) 실리콘-탄소 피복물, (ⅲ) 실리콘-질소 피복물 및 (ⅳ) 실리콘-탄소-질소 피복물로 이루어진 그룹중에서 선택된 차단 피복물을 (a) 화학 증착 및 (b) 플라스마 증진된 화학 증착으로 이루어진 그룹중에서 선택된 방법으로 표면 안정화 피복물에 적용함을 추가로 포함하는 방법.
- 제 3 항에 있어서, 차단 피복물을 금속 보조 화학 증착으로 적용하는 방법.
- 제 1 항의 방법으로 피복된 기질.
- 제 2 항의 방법으로 피복된 기질.
- 제 3 항의 방법으로 피복된 기질.
- 제 1 항의 방법으로 피복된 전자장치.
- 제 2 항의 방법으로 피복된 전자장치.
- 제 3 항의 방법으로 피복된 전자장치.
- 피복물이 다중 금속화 층에서 형성되는 전자기능을 분리하기 위한 유전 필름으로서 사용되는, 제1항의 피복방법으로 형성된 중간 층을 함유하는 구조를 포함하는 제품.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/138,743 US4847162A (en) | 1987-12-28 | 1987-12-28 | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
US138,743 | 1987-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890011069A true KR890011069A (ko) | 1989-08-12 |
KR950000864B1 KR950000864B1 (ko) | 1995-02-02 |
Family
ID=22483432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880017555A KR950000864B1 (ko) | 1987-12-28 | 1988-12-27 | 세라믹 피복물을 기재위에 형성시키는 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4847162A (ko) |
EP (1) | EP0323103B1 (ko) |
JP (1) | JPH06103689B2 (ko) |
KR (1) | KR950000864B1 (ko) |
CA (1) | CA1317822C (ko) |
DE (1) | DE3889094T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100545719B1 (ko) * | 1998-09-25 | 2006-03-31 | 학교법인연세대학교 | 교류형 플라즈마 디스플레이 패널 소자용 보호코팅층 재료 |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
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KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
US4898907A (en) * | 1986-12-03 | 1990-02-06 | Dow Corning Corporation | Compositions of platinum and rhodium catalyst in combination with hydrogen silsesquioxane resin |
US5008320A (en) * | 1986-12-04 | 1991-04-16 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
CA2027031A1 (en) * | 1989-10-18 | 1991-04-19 | Loren A. Haluska | Hermetic substrate coatings in an inert gas atmosphere |
US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
US5262201A (en) * | 1990-06-04 | 1993-11-16 | Dow Corning Corporation | Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added |
US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
US5059448A (en) * | 1990-06-18 | 1991-10-22 | Dow Corning Corporation | Rapid thermal process for obtaining silica coatings |
CA2053985A1 (en) * | 1990-10-25 | 1992-04-26 | Sumio Hoshino | Process for producing thin glass film by sol-gel method |
EP0485086A1 (en) * | 1990-10-31 | 1992-05-13 | AT&T Corp. | Dielectric layers for integrated circuits |
US5380553A (en) * | 1990-12-24 | 1995-01-10 | Dow Corning Corporation | Reverse direction pyrolysis processing |
US5238787A (en) * | 1991-04-22 | 1993-08-24 | Dow Corning Corporation | Photodelineable coatings from hydrogen silsesquioxane resin |
US5445894A (en) * | 1991-04-22 | 1995-08-29 | Dow Corning Corporation | Ceramic coatings |
US5312684A (en) * | 1991-05-02 | 1994-05-17 | Dow Corning Corporation | Threshold switching device |
US5339211A (en) * | 1991-05-02 | 1994-08-16 | Dow Corning Corporation | Variable capacitor |
US5436029A (en) * | 1992-07-13 | 1995-07-25 | Dow Corning Corporation | Curing silicon hydride containing materials by exposure to nitrous oxide |
TW492989B (en) * | 1993-03-19 | 2002-07-01 | Dow Corning | Stabilization of hydrogen silsesquioxane resin solutions |
US5547703A (en) * | 1994-04-11 | 1996-08-20 | Dow Corning Corporation | Method of forming si-o containing coatings |
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-
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- 1987-12-28 US US07/138,743 patent/US4847162A/en not_active Expired - Lifetime
-
1988
- 1988-11-23 CA CA000583888A patent/CA1317822C/en not_active Expired - Fee Related
- 1988-12-19 EP EP88312027A patent/EP0323103B1/en not_active Expired - Lifetime
- 1988-12-19 DE DE3889094T patent/DE3889094T2/de not_active Expired - Fee Related
- 1988-12-21 JP JP63320734A patent/JPH06103689B2/ja not_active Expired - Fee Related
- 1988-12-27 KR KR1019880017555A patent/KR950000864B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100545719B1 (ko) * | 1998-09-25 | 2006-03-31 | 학교법인연세대학교 | 교류형 플라즈마 디스플레이 패널 소자용 보호코팅층 재료 |
Also Published As
Publication number | Publication date |
---|---|
DE3889094T2 (de) | 1994-10-20 |
EP0323103A2 (en) | 1989-07-05 |
EP0323103A3 (en) | 1990-03-21 |
EP0323103B1 (en) | 1994-04-13 |
JPH06103689B2 (ja) | 1994-12-14 |
US4847162A (en) | 1989-07-11 |
CA1317822C (en) | 1993-05-18 |
DE3889094D1 (de) | 1994-05-19 |
KR950000864B1 (ko) | 1995-02-02 |
JPH01202826A (ja) | 1989-08-15 |
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