KR890011069A - 세라믹 피복물을 기재위에 형성시키는 방법 - Google Patents

세라믹 피복물을 기재위에 형성시키는 방법 Download PDF

Info

Publication number
KR890011069A
KR890011069A KR1019880017555A KR880017555A KR890011069A KR 890011069 A KR890011069 A KR 890011069A KR 1019880017555 A KR1019880017555 A KR 1019880017555A KR 880017555 A KR880017555 A KR 880017555A KR 890011069 A KR890011069 A KR 890011069A
Authority
KR
South Korea
Prior art keywords
coating
substrate
coated
vapor deposition
chemical vapor
Prior art date
Application number
KR1019880017555A
Other languages
English (en)
Other versions
KR950000864B1 (ko
Inventor
앤드류 할루스카 로렌
윈튼 마이클 케이스
타레이 레오
Original Assignee
노만 에드워드 루이스
다우 코닝 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 노만 에드워드 루이스, 다우 코닝 코포레이션 filed Critical 노만 에드워드 루이스
Publication of KR890011069A publication Critical patent/KR890011069A/ko
Application granted granted Critical
Publication of KR950000864B1 publication Critical patent/KR950000864B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314Inorganic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314Inorganic layers
    • H01L21/3143Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3144Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329Insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31678Of metal

Abstract

내용 없음

Description

세라믹 피복물을 기질위에 형성하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (11)

  1. (a) 하이드로겐 실세스퀴옥산 수지를 포함하는 유동성 기질에 적용하고 ; (b) 수지 용액을 건조시켜 하이드로겐 실세스퀴옥산 수지를 기질 위에 부착시키며 ; (c) 피복된 기질을 암모니아 대기 속에서 세라믹 피복물을 기질 위에 형성시키기에 충분한 온도로 가열함을 포함하여 세라믹 피복물을 기질 위에 형성하는 방법.
  2. 제 1 항에 있어서, (D)(ⅰ) 실리콘 피복물, (ⅱ) 실리콘-탄소 피복물, (ⅲ) 실리콘-질소 피복물 및 (ⅳ) 실리콘-탄소-질소 피복물로 이루어진 그룹중에서 선택된 표면 안정화 피복물을 (a) 화학 증착 , (b) 플라스마 증진된 화학 증착 및 (c) 예비세라믹 중합체 피복물의 적용과 예비세라믹 중합체 피복물의 후속 세라믹화로 이루어진 그룹중에서 선택된 방법으로 세라믹 피복물을 적용함을 추가로 포함하는 방법.
  3. 제 2 항에 있어서, (E)(ⅰ) 실리콘 피복물, (ⅱ) 실리콘-탄소 피복물, (ⅲ) 실리콘-질소 피복물 및 (ⅳ) 실리콘-탄소-질소 피복물로 이루어진 그룹중에서 선택된 차단 피복물을 (a) 화학 증착 및 (b) 플라스마 증진된 화학 증착으로 이루어진 그룹중에서 선택된 방법으로 표면 안정화 피복물에 적용함을 추가로 포함하는 방법.
  4. 제 3 항에 있어서, 차단 피복물을 금속 보조 화학 증착으로 적용하는 방법.
  5. 제 1 항의 방법으로 피복된 기질.
  6. 제 2 항의 방법으로 피복된 기질.
  7. 제 3 항의 방법으로 피복된 기질.
  8. 제 1 항의 방법으로 피복된 전자장치.
  9. 제 2 항의 방법으로 피복된 전자장치.
  10. 제 3 항의 방법으로 피복된 전자장치.
  11. 피복물이 다중 금속화 층에서 형성되는 전자기능을 분리하기 위한 유전 필름으로서 사용되는, 제1항의 피복방법으로 형성된 중간 층을 함유하는 구조를 포함하는 제품.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880017555A 1987-12-28 1988-12-27 세라믹 피복물을 기재위에 형성시키는 방법 KR950000864B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/138,743 US4847162A (en) 1987-12-28 1987-12-28 Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
US138,743 1987-12-28

Publications (2)

Publication Number Publication Date
KR890011069A true KR890011069A (ko) 1989-08-12
KR950000864B1 KR950000864B1 (ko) 1995-02-02

Family

ID=22483432

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880017555A KR950000864B1 (ko) 1987-12-28 1988-12-27 세라믹 피복물을 기재위에 형성시키는 방법

Country Status (6)

Country Link
US (1) US4847162A (ko)
EP (1) EP0323103B1 (ko)
JP (1) JPH06103689B2 (ko)
KR (1) KR950000864B1 (ko)
CA (1) CA1317822C (ko)
DE (1) DE3889094T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100545719B1 (ko) * 1998-09-25 2006-03-31 학교법인연세대학교 교류형 플라즈마 디스플레이 패널 소자용 보호코팅층 재료

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US4898907A (en) * 1986-12-03 1990-02-06 Dow Corning Corporation Compositions of platinum and rhodium catalyst in combination with hydrogen silsesquioxane resin
US5008320A (en) * 1986-12-04 1991-04-16 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
CA2027031A1 (en) * 1989-10-18 1991-04-19 Loren A. Haluska Hermetic substrate coatings in an inert gas atmosphere
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles
US5262201A (en) * 1990-06-04 1993-11-16 Dow Corning Corporation Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added
US5116637A (en) * 1990-06-04 1992-05-26 Dow Corning Corporation Amine catalysts for the low temperature conversion of silica precursors to silica
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
CA2053985A1 (en) * 1990-10-25 1992-04-26 Sumio Hoshino Process for producing thin glass film by sol-gel method
EP0485086A1 (en) * 1990-10-31 1992-05-13 AT&T Corp. Dielectric layers for integrated circuits
US5380553A (en) * 1990-12-24 1995-01-10 Dow Corning Corporation Reverse direction pyrolysis processing
US5238787A (en) * 1991-04-22 1993-08-24 Dow Corning Corporation Photodelineable coatings from hydrogen silsesquioxane resin
US5445894A (en) * 1991-04-22 1995-08-29 Dow Corning Corporation Ceramic coatings
US5312684A (en) * 1991-05-02 1994-05-17 Dow Corning Corporation Threshold switching device
US5339211A (en) * 1991-05-02 1994-08-16 Dow Corning Corporation Variable capacitor
US5436029A (en) * 1992-07-13 1995-07-25 Dow Corning Corporation Curing silicon hydride containing materials by exposure to nitrous oxide
TW492989B (en) * 1993-03-19 2002-07-01 Dow Corning Stabilization of hydrogen silsesquioxane resin solutions
US5547703A (en) * 1994-04-11 1996-08-20 Dow Corning Corporation Method of forming si-o containing coatings
DE19502095A1 (de) * 1995-01-24 1996-07-25 Max Planck Gesellschaft Herstellung keramischer Überzüge durch reaktive Abscheidung von polymeren Keramikvorstufen
US5656555A (en) * 1995-02-17 1997-08-12 Texas Instruments Incorporated Modified hydrogen silsesquioxane spin-on glass
US5508238A (en) * 1995-05-11 1996-04-16 Dow Corning Corporation Monolithic ceramic bodies using modified hydrogen silsesquioxane resin
US5635240A (en) * 1995-06-19 1997-06-03 Dow Corning Corporation Electronic coating materials using mixed polymers
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6018002A (en) * 1998-02-06 2000-01-25 Dow Corning Corporation Photoluminescent material from hydrogen silsesquioxane resin
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6231989B1 (en) 1998-11-20 2001-05-15 Dow Corning Corporation Method of forming coatings
EP1190277B1 (en) * 1999-06-10 2009-10-07 AlliedSignal Inc. Semiconductor having spin-on-glass anti-reflective coatings for photolithography
US6358841B1 (en) 1999-08-23 2002-03-19 Taiwan Semiconductor Manufacturing Company Method of copper CMP on low dielectric constant HSQ material
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US7011868B2 (en) * 2000-03-20 2006-03-14 Axcelis Technologies, Inc. Fluorine-free plasma curing process for porous low-k materials
US6913796B2 (en) * 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
EP1275152A2 (en) * 2000-04-12 2003-01-15 Koninklijke Philips Electronics N.V. Bonding pad in semiconductor device
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
AU2001296737A1 (en) 2000-10-12 2002-04-22 North Carolina State University Co2-processes photoresists, polymers, and photoactive compounds for microlithography
JP3530938B2 (ja) * 2001-03-27 2004-05-24 独立行政法人産業技術総合研究所 シルセスキオキサン系ポリマーを含む耐熱性樹脂組成物、該組成物を用いて形成された被膜、及びその被膜の作成方法
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
JP4130380B2 (ja) * 2003-04-25 2008-08-06 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US20060063059A1 (en) * 2004-07-01 2006-03-23 Ceramatec, Inc. Amorphous, non-oxide seals for solid electrolyte or mixed electrolyte cells
JP4969785B2 (ja) * 2005-02-16 2012-07-04 本田技研工業株式会社 カルコパイライト型太陽電池及びその製造方法
EP1871824B1 (en) 2005-03-24 2017-03-01 Bridgestone Corporation Compounding silica-reinforced rubber with low volatile organic compound (voc) emission
US7915368B2 (en) * 2007-05-23 2011-03-29 Bridgestone Corporation Method for making alkoxy-modified silsesquioxanes
US8501895B2 (en) * 2007-05-23 2013-08-06 Bridgestone Corporation Method for making alkoxy-modified silsesquioxanes and amino alkoxy-modified silsesquioxanes
KR100851811B1 (ko) 2007-07-20 2008-08-13 유승범 기능성 물질을 내포하는 실리콘-포함 중합체의 복합체
US8962746B2 (en) * 2007-12-27 2015-02-24 Bridgestone Corporation Methods of making blocked-mercapto alkoxy-modified silsesquioxane compounds
US8794282B2 (en) 2007-12-31 2014-08-05 Bridgestone Corporation Amino alkoxy-modified silsesquioxane adhesives for improved metal adhesion and metal adhesion retention to cured rubber
US8513371B2 (en) * 2007-12-31 2013-08-20 Bridgestone Corporation Amino alkoxy-modified silsesquioxanes and method of preparation
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
WO2011053551A1 (en) 2009-10-28 2011-05-05 Dow Corning Corporation Polysilane - polysilazane copolymers and methods for their preparation and use
US8642691B2 (en) 2009-12-28 2014-02-04 Bridgestone Corporation Amino alkoxy-modified silsesquioxane adhesives for improved metal adhesion and metal adhesion retention to cured rubber
ES2430350T3 (es) 2010-08-18 2013-11-20 Armacell Enterprise Gmbh & Co. Kg Material de aislamiento flexible autoendurecible con excelente resistencia a la temperatura y a las llamas
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
CN114016318A (zh) 2014-12-31 2022-02-08 株式会社普利司通 用于将钢合金粘附到橡胶的氨基烷氧基改性倍半硅氧烷粘合剂
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US11804432B2 (en) * 2021-02-11 2023-10-31 Infineon Technologies Ag Semiconductor device with polymer-based insulating material and method of producing thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
JPS5245270A (en) * 1976-08-21 1977-04-09 Rohm Co Ltd Semiconductor device
JPS562636A (en) * 1979-06-22 1981-01-12 Hitachi Ltd Inactivation method of surface of semiconductor
US4395438A (en) * 1980-09-08 1983-07-26 Amdahl Corporation Low pressure chemical vapor deposition of silicon nitride films
JPS57164413A (en) * 1981-03-31 1982-10-09 Fujitsu Ltd Manufacture of thin film magnetic head
JPS5893240A (ja) * 1981-11-30 1983-06-02 Japan Synthetic Rubber Co Ltd 半導体装置及びその製造方法
DE3278567D1 (en) * 1981-10-03 1988-07-07 Japan Synthetic Rubber Co Ltd Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
JPS5866335A (ja) * 1981-10-16 1983-04-20 Fujitsu Ltd 集積回路
CA1204527A (en) * 1982-08-13 1986-05-13 Theodore F. Retajczyk, Jr. Polymeric films for electronic circuits
JPS59128281A (ja) * 1982-12-29 1984-07-24 信越化学工業株式会社 炭化けい素被覆物の製造方法
JPS60213032A (ja) * 1984-04-06 1985-10-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4822697A (en) * 1986-12-03 1989-04-18 Dow Corning Corporation Platinum and rhodium catalysis of low temperature formation multilayer ceramics
US4826733A (en) * 1986-12-03 1989-05-02 Dow Corning Corporation Sin-containing coatings for electronic devices
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100545719B1 (ko) * 1998-09-25 2006-03-31 학교법인연세대학교 교류형 플라즈마 디스플레이 패널 소자용 보호코팅층 재료

Also Published As

Publication number Publication date
DE3889094T2 (de) 1994-10-20
EP0323103A2 (en) 1989-07-05
EP0323103A3 (en) 1990-03-21
EP0323103B1 (en) 1994-04-13
JPH06103689B2 (ja) 1994-12-14
US4847162A (en) 1989-07-11
CA1317822C (en) 1993-05-18
DE3889094D1 (de) 1994-05-19
KR950000864B1 (ko) 1995-02-02
JPH01202826A (ja) 1989-08-15

Similar Documents

Publication Publication Date Title
KR890011069A (ko) 세라믹 피복물을 기재위에 형성시키는 방법
KR890011070A (ko) 세라믹 피복물을 지지체위에 형성하는 방법
KR890016627A (ko) 세라믹 피복물을 기판위에 형성하는 방법
KR880008443A (ko) 전자장치 보호용 다층 세라믹 피복물을 형성하는 방법
KR920021630A (ko) 하이드로겐 실세스퀴옥산 수지의 증기상 증착
KR920001620A (ko) 반도체장치 및 그의 제조방법
KR980002289A (ko) 마이크로전자 장치용 다층 피막
KR880008439A (ko) 실리케이트 에스테르로부터의 다중층 세라믹
KR970706357A (ko) 세라믹스질 물질 형성용 조성물 및 세라믹스질 물질의 제조 방법(composition for forming ceramic substances and process for producing ceramic substances)
KR940016575A (ko) 산화실리콘 막 형성 방법
KR890011065A (ko) 백금 또는 로듐 촉매화된 수소 실세스퀴옥산 수지 및 금속 산화물로부터의 다층 세라믹 피복물
KR880008438A (ko) 수소 실세스퀴옥산으로 부터의 다층 세라믹
KR930017846A (ko) 실리콘 침투된 세라믹 나노컴포지트 피복물
WO1994000870A2 (en) Chemical vapor deposition from single organometallic precursors
KR960034488A (ko) 고온 저항을 개선시키기 위한 티타늄 질화물 층의 처리방법
EP0328333A3 (en) Process for producing ceramic superconductors
KR960022871A (ko) 복합 전자 피막
ES8506823A1 (es) Un procedimiento para la deposicion electroforetica de una pelicula organica sobre un substragto conductor
KR900702075A (ko) 고순도 금 박막의 광화학적 증착 방법
KR970067603A (ko) 비정질 탄소 박막 및 그것의 형성 방법, 그리고 비정질 탄소 박막을 사용한 반도체 디바이스
KR900015363A (ko) 초전도체를 보호피복하는 방법
KR900001011A (ko) 절연막의 제조방법
KR910002520A (ko) 기판에 대한 합성 다이아몬드 피복층의 접착력 개량 방법
JPS553863A (en) Treating method of prime coat by gas softening nitriding
KR970006168A (ko) 산소와 마그네슘이 일대일의 비로 들어 있는 마그네슘 유도체를 사용하여 산화 마그네슘을 기질 위에 피막하는 방법

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20020125

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee