KR890011070A - 세라믹 피복물을 지지체위에 형성하는 방법 - Google Patents

세라믹 피복물을 지지체위에 형성하는 방법 Download PDF

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KR890011070A
KR890011070A KR1019880017556A KR880017556A KR890011070A KR 890011070 A KR890011070 A KR 890011070A KR 1019880017556 A KR1019880017556 A KR 1019880017556A KR 880017556 A KR880017556 A KR 880017556A KR 890011070 A KR890011070 A KR 890011070A
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coating
support
coated
silicon
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KR950000865B1 (ko
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앤드류 할루스카 로렌
윈튼 마이클 케이스
타레이 레오
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노만 에드워드 루이스
다우 코닝 코포레이션
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Abstract

내용 없음

Description

세라믹 피복물을 지지체위에 형성하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (11)

  1. (A) 하이드로겐 실세스퀴옥산 수지와 알루미늄, 티타늄 및 지르코늄의 아실옥시 및 알콕시 화합물로 이루어진 그룹으로부터 선택된 금속 산화물 전구체(여기서, 금속 산화물로서의 금속 산화물 전구체의 비율은 약 0.1내지 약3.0%이다)를 포함하는 혼합물의 유동성 용액을 지지체에 적용하고 ; (B) 수지 용액을 건조시켜 예비세라믹 피복물을 지지체 위에 부착시키고 ; (C) 피복된 지지체를 실질적으로 암모니아 대기속에서 세라믹 피복물을 지지체 위에 생성시키기에 충분한 온도로 가열함을 포함하여 세라믹 피복물을 지지체 위해 형성하는 방법.
  2. 제 1 항에 있어서, (ⅰ) 실리콘 피복물, (ⅱ) 실리콘-탄소 피복물, (ⅲ) 실리콘-질소 피복물 및 (ⅳ) 실리콘-탄소-질소 피복물로 이루어진 그룹으로부터 선택된 표면안정화 피복물을 (a) 화학 증착, (b) 플라스마 증강된 화학 증착 및 (c) 예비세라믹 중합체 피복물의 적용이후 예비세라믹 중합체 피복물의 세라믹화로 이루어진 그룹으로부터 선택된 방법으로 세라믹 피복물에 적용함을 추가로 포함하는 방법.
  3. 제 2 항에 있어서, (ⅰ) 실리콘 피복물, (ⅱ) 실리콘-탄소 피복물, (ⅲ) 실리콘-질소 피복물 및 (ⅳ) 실리콘-탄소-질소 피복물로 이루어진 그룹으로부터 선택된 차단 피복물을 (a) 화학 증착 및 (b) 플라스마 증강된 화학 증착으로 이루어진 그룹으로부터 선택된 방법으로 표면안정화 피복물에 적용함을 추가로 포함하는 방법.
  4. 제 1 항의 방법에 의해 피복된 지지체.
  5. 제 2 항의 방법에 의해 피복된 지지체.
  6. 제 3 항의 방법에 의해 피복된 지지체.
  7. 제 1 항에 있어서, 지지체가 전자장치인 방법.
  8. 제 1 항의 방법에 의한 피복된 전자장치.
  9. 제 2 항의 방법에 의해 피복된 전자장치.
  10. 제 3 항의 방법에 의해 피복된 전자장치.
  11. 제 4 항에 있어서, 피복물이 중간 위치 유전층으로서 사용되는 피복된 지지체.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880017556A 1987-12-28 1988-12-27 세라믹 피복물을 지지체위에 형성하는 방법 KR950000865B1 (ko)

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Application Number Priority Date Filing Date Title
US138,744 1987-12-28
US07/138,744 US4849296A (en) 1987-12-28 1987-12-28 Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia

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KR890011070A true KR890011070A (ko) 1989-08-12
KR950000865B1 KR950000865B1 (ko) 1995-02-02

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US (1) US4849296A (ko)
EP (1) EP0323186B1 (ko)
JP (1) JPH06103690B2 (ko)
KR (1) KR950000865B1 (ko)
CA (1) CA1323529C (ko)
DE (1) DE3888506T2 (ko)
TW (1) TW229198B (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128494A (en) * 1985-04-26 1992-07-07 Sri International Hydridosiloxanes as precursors to ceramic products
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US4898907A (en) * 1986-12-03 1990-02-06 Dow Corning Corporation Compositions of platinum and rhodium catalyst in combination with hydrogen silsesquioxane resin
US5008320A (en) * 1986-12-04 1991-04-16 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US5162136A (en) * 1988-08-01 1992-11-10 Blum Yigal D Process for increasing strength of glass by forming ceramic coating on glass surface
US5318857A (en) * 1989-11-06 1994-06-07 Dow Corning Corporation Low temperature ozonolysis of silicon and ceramic oxide precursor polymers to ceramic coatings
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles
US5262201A (en) * 1990-06-04 1993-11-16 Dow Corning Corporation Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added
US5116637A (en) * 1990-06-04 1992-05-26 Dow Corning Corporation Amine catalysts for the low temperature conversion of silica precursors to silica
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
US5091162A (en) * 1990-10-01 1992-02-25 Dow Corning Corporation Perhydrosiloxane copolymers and their use as coating materials
US5312684A (en) * 1991-05-02 1994-05-17 Dow Corning Corporation Threshold switching device
EP0590780B1 (en) * 1992-08-28 1997-06-25 Dow Corning Corporation Method for producing an integrated circuit with hermetic protection based on a ceramic layer
CA2104340A1 (en) * 1992-08-31 1994-03-01 Grish Chandra Hermetic protection for integrated circuits
EP0586149A1 (en) * 1992-08-31 1994-03-09 Dow Corning Corporation Hermetic protection for integrated circuits, based on a ceramic layer
US5825078A (en) * 1992-09-23 1998-10-20 Dow Corning Corporation Hermetic protection for integrated circuits
EP0627495B1 (en) * 1993-05-10 1998-08-12 Optical Coating Laboratory, Inc. Self-healing UV-barrier coating with flexible polymer substrate
JPH07169020A (ja) * 1993-09-21 1995-07-04 Eastman Kodak Co 磁気薄膜ヘッドのための基板表面の平坦化プロセス
US5530293A (en) 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5508238A (en) * 1995-05-11 1996-04-16 Dow Corning Corporation Monolithic ceramic bodies using modified hydrogen silsesquioxane resin
US6066581A (en) 1995-07-27 2000-05-23 Nortel Networks Corporation Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits
DE69606942T2 (de) * 1995-09-25 2000-10-05 Dow Corning Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik
JP3254574B2 (ja) 1996-08-30 2002-02-12 東京エレクトロン株式会社 塗布膜形成方法及びその装置
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6143855A (en) 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
WO1999065074A2 (en) * 1998-06-10 1999-12-16 Koninklijke Philips Electronics N.V. Semiconductor device comprising an integrated circuit provided with a ceramic security coating and method of manufacturing such a device
US6407009B1 (en) 1998-11-12 2002-06-18 Advanced Micro Devices, Inc. Methods of manufacture of uniform spin-on films
US6530340B2 (en) 1998-11-12 2003-03-11 Advanced Micro Devices, Inc. Apparatus for manufacturing planar spin-on films
US6317642B1 (en) * 1998-11-12 2001-11-13 Advanced Micro Devices, Inc. Apparatus and methods for uniform scan dispensing of spin-on materials
US6194328B1 (en) 1998-12-09 2001-02-27 Advanced Micro Devices, Inc. H2 diffusion barrier formation by nitrogen incorporation in oxide layer
CA2374944A1 (en) * 1999-06-10 2000-12-21 Nigel Hacker Spin-on-glass anti-reflective coatings for photolithography
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
US7012363B2 (en) * 2002-01-10 2006-03-14 Universal Display Corporation OLEDs having increased external electroluminescence quantum efficiencies
US6737117B2 (en) 2002-04-05 2004-05-18 Dow Corning Corporation Hydrosilsesquioxane resin compositions having improved thin film properties
AU2002352990A1 (en) * 2002-06-05 2004-02-02 Seagate Technology Llc Protective overcoatings
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
JP4231418B2 (ja) * 2004-01-07 2009-02-25 株式会社小糸製作所 発光モジュール及び車両用灯具
WO2005078715A2 (de) * 2004-02-13 2005-08-25 Plasmatreat Gmbh Verfahren zum beschichten eines optischen datenträgers sowie ein beschichteter optischer datenträger
US7101754B2 (en) * 2004-06-10 2006-09-05 Dalsa Semiconductor Inc. Titanium silicate films with high dielectric constant
US7795592B2 (en) * 2005-11-21 2010-09-14 Fujifilm Corporation Image detector and manufacturing method of the same
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8552829B2 (en) 2010-11-19 2013-10-08 Infineon Technologies Austria Ag Transformer device and method for manufacturing a transformer device
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
CN105149717A (zh) * 2015-10-19 2015-12-16 哈尔滨工业大学 一种硅基陶瓷表面金属化方法
WO2020112782A1 (en) * 2018-11-27 2020-06-04 Versum Materials Us, Llc 1-methyl-1-iso-propoxy-silacycloalkanes and dense organosilica films made therefrom
CN111269027A (zh) * 2020-03-02 2020-06-12 河源市东方硅源科技有限公司 一种在陶瓷表面形成带孔状结构的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
JPS57164413A (en) * 1981-03-31 1982-10-09 Fujitsu Ltd Manufacture of thin film magnetic head
JPS5893240A (ja) * 1981-11-30 1983-06-02 Japan Synthetic Rubber Co Ltd 半導体装置及びその製造方法
JPS5866335A (ja) * 1981-10-16 1983-04-20 Fujitsu Ltd 集積回路
JPS60213032A (ja) * 1984-04-06 1985-10-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices

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EP0323186A2 (en) 1989-07-05
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US4849296A (en) 1989-07-18
DE3888506T2 (de) 1994-10-20
TW229198B (ko) 1994-09-01
EP0323186A3 (en) 1990-09-19
JPH06103690B2 (ja) 1994-12-14
KR950000865B1 (ko) 1995-02-02
CA1323529C (en) 1993-10-26

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