KR870000750A - 이산화실리콘 필름을 화학적으로 증기피복하는 방법 - Google Patents

이산화실리콘 필름을 화학적으로 증기피복하는 방법 Download PDF

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KR870000750A
KR870000750A KR1019850008569A KR850008569A KR870000750A KR 870000750 A KR870000750 A KR 870000750A KR 1019850008569 A KR1019850008569 A KR 1019850008569A KR 850008569 A KR850008569 A KR 850008569A KR 870000750 A KR870000750 A KR 870000750A
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reactant
semiconductor structure
petyl
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시 미체너 제임스
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이마드 마하윌리
포커스 세미콘 덕터 시스템즈 인코포레이티드
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Publication of KR870000750A publication Critical patent/KR870000750A/ko

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Abstract

내용 없음.

Description

이산화실리콘 필름을 화학적으로 증기피복하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 방법을 실시하는데 적합한 반응기.
제2도는 도핑된 SiO2필름을 피복하는데 사용하기 위한 제2버블실을 포함한 제1도와 유사한 반응기.
* 도면의 주요부분에 대한 부호의 설명
1 : 하우징(housing) 2 : 반응실
3 : 가열기 플레이트(plate) 4 : 실리콘 웨이퍼(wafer)
5 : 지지로드(rod) 6 : 온도조절
7 : 열전기쌍, 8 : 버블실(bubble chamber)
10 : 마이크로반응기

Claims (11)

  1. 반도체 구조에 화학적으로 증기피복에 의한 SiO2를 토대로 한 층을 제조하는 방법에 있어서, 상기 반도체 구조를 반응실에 넣고, 상기 반도체 구조를 900℃ 또는 그 이하의 선택한 온도로 가열하고, 기체증기 반응물을 도입하고, 이 반응물은 테드라페톡시실란, 다음식(Ⅱ)의 트리알콕시실란, 다음식(Ⅲ)의 디알콕시실란 또는 다음식(Ⅳ)의 비닐트리알콕시실란으로 구성된 그룹으로부터 선택함으로써 상기 반응물을 열분해에 의한 분해로 SiO2를 토대로 한 층의 증기피복방법.
    여기서 R은 페틸, 에틸 또는 프로필그룹이다.
    여기서 R은 페틸, 에틸 또는 프로필그룹이다.
    여기서 R은 페틸 또는 에틸그룹이다.
  2. 반도체 구조에 화학적으로 증기피복에 의한 SiO2층을 제조하는 방법에 있어서, 상기 반도체 구조를 반응실에 넣고, 상기 반도체 구조를 900℃ 또는 그 이하의 선택한 온도로 가열하고, 첫째 기체증기 반응물 및 둘째 산화반응물을 도입하고, 이 기체증기 반응물은 테트라페톡시실란, 다음식(Ⅱ)의 트리알콕시실란, 다음식(Ⅲ)의 디알콕시실란 또는 다음식(Ⅳ)의 비닐트리알콕시실란으로 구성된 그룹으로부터 선택함으로써 상기 첫째 기체증기 반응물과 상기 둘째 산화반응물의 열적인 반응에 의해 SiO2를 토대로 한 층의 증기피복방법.
    여기서 R은 페틸, 에틸 또는 프로필그룹이다.
    여기서 R은 페틸, 에틸 또는 프로필그룹이다.
    여기서 R은 페틸 또는 에틸그룹이다.
  3. 제1항 또는 제2항에 있어서, 상기 반응실내 압력이 1기압 -0.5토르인 방법.
  4. 제1항에 있어서, 상기 선택한 온도가 350-650℃인 방법.
  5. 제3항에 있어서, 선택한 상기 첫째 반응물이 테트라페톡시실란, 또는 트리페톡시실란이고 상기 둘째 산화반응물이 산소이고 상기 선택한 온도가 550-650℃인 방법.
  6. 제3항에 있어서, 선택한 상기 첫째 반응물이 테트라페톡시실란 또는 트리페톡시실란이고 상기 산화반응물이 산소이고 상기 선댁한 온도가 350-550℃인 방법.
  7. 반도체 구조에 화학적 증기피복에 의해 SiO2를 토대로 한 층을 제조하는 방법에 있어서, 상기 반도체 구조를 반응실에 넣고, 상기 반도체 구조를 900℃ 또는 그 이하의 선택한 온도로 가열하고, 기체증기 알콕시실란 및 오존을 포함한 반응기체를 도입함으로써 상기 알콕시실란 및 상기 오존의 열적인 반응에 의해 최소한 부분적으로 상기 SiO2를 토대로 한 층의 증기피복방법.
  8. 제7항에 있어서, 상기 선택한 온도가 300-500℃이고 상기 반응기체내 오존의 부분이 10중량%이하인 방법.
  9. 제8항에 있어서, 상기 반응기체가 산소로 된 방법.
  10. 제7항에 있어서, 붕소 또는 인을 포함한 반응기체를 상기 반응실로 넣는 단계가 있는 방법.
  11. 제10항에 있어서, 상기 선택한 온도가 300-500℃인 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850008569A 1985-06-14 1985-11-14 이산화실리콘 필름을 화학적으로 증기피복하는 방법 KR870000750A (ko)

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US74483885A 1985-06-14 1985-06-14
US744,838 1985-06-14

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US5989998A (en) * 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
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EP0212691A1 (en) 1987-03-04
JPS6242536A (ja) 1987-02-24

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