KR880001042A - 인규산 글라스(psg)코팅 형성 공정 - Google Patents

인규산 글라스(psg)코팅 형성 공정 Download PDF

Info

Publication number
KR880001042A
KR880001042A KR1019870006346A KR870006346A KR880001042A KR 880001042 A KR880001042 A KR 880001042A KR 1019870006346 A KR1019870006346 A KR 1019870006346A KR 870006346 A KR870006346 A KR 870006346A KR 880001042 A KR880001042 A KR 880001042A
Authority
KR
South Korea
Prior art keywords
psg
process according
gas
reaction
phosphoric acid
Prior art date
Application number
KR1019870006346A
Other languages
English (en)
Other versions
KR900008970B1 (ko
Inventor
마시히데 니시무라
가네다께 다까사끼
겐지 고야마
아쓰히로 쓰꾸네
Original Assignee
야마모도 다꾸마
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마모도 다꾸마, 후지쓰 가부시끼가이샤 filed Critical 야마모도 다꾸마
Publication of KR880001042A publication Critical patent/KR880001042A/ko
Application granted granted Critical
Publication of KR900008970B1 publication Critical patent/KR900008970B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/471—Inorganic layers
    • H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

내용 없음

Description

인규산 글라스(PSG)코팅 형성 공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 대기압력 CVD 반응기의 모식적인 도. 제7A도 및 7B도는 본 발명에 따른 단계적 공정범위를 종래와 비교하여 A1상에 부착된 PSG 코오팅의 횡단면도.

Claims (5)

  1. 화학적 증기 부착 방법으로 기판상에 인규산 글라스(PSG) 코오팅을 형성하는 공정에 있어서, 모노실란, 인화수소 및 산소로 구성되어 있는 반응 가스가 암모니아 가스와 혼합되어 반응용기 안으로 주입 되어지는 화학적 증기 부착 방법으로 기판상에 인규산 글라스 코이팅을 형성하는 공정.
  2. 청구범위 제1항에 있어서, 반응가스로 공급되는 가스들이 따로따로, 혹은 조합하여서 반응용기 안으로 주입되어지는 공정.
  3. 청구범위 제1항 또는 제2항에 있어서, 반응가스에 있어서, 암모니아 가스대 모노실란 가스에 대한 체적비가 0.1-100정도 내에 있는 공정.
  4. 청구범위 제1항 내지 제3항에 있어서, 화학적 증기부착반응이 300-450℃에서 행하여지는 공정
  5. 청구범위 제1항 내지 제4항 중에서 어느한 항에 있어서, 반도체 소자를 생산하는데 사용되는 공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870006346A 1986-06-23 1987-06-22 인규산 글라스(psg) 코팅 형성 공정 KR900008970B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61144919A JPS632330A (ja) 1986-06-23 1986-06-23 化学気相成長方法
JP61-144919 1986-06-23
JP144919 1986-06-23

Publications (2)

Publication Number Publication Date
KR880001042A true KR880001042A (ko) 1988-03-31
KR900008970B1 KR900008970B1 (ko) 1990-12-15

Family

ID=15373285

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870006346A KR900008970B1 (ko) 1986-06-23 1987-06-22 인규산 글라스(psg) 코팅 형성 공정

Country Status (5)

Country Link
US (1) US4781945A (ko)
EP (1) EP0251650B1 (ko)
JP (1) JPS632330A (ko)
KR (1) KR900008970B1 (ko)
DE (1) DE3764554D1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5112776A (en) * 1988-11-10 1992-05-12 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
US5244841A (en) * 1988-11-10 1993-09-14 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
DE69031854T2 (de) * 1989-08-31 1998-04-16 At & T Corp Methode und Vorrichtung zur Ablagerung einer isolierten Schicht
US5328872A (en) * 1989-12-29 1994-07-12 At&T Bell Laboratories Method of integrated circuit manufacturing using deposited oxide
DE69231390D1 (de) * 1991-06-10 2000-10-05 At & T Corp Anisotropische Ablagerung von Dielektrika
US5434110A (en) * 1992-06-15 1995-07-18 Materials Research Corporation Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates
FR2695118B1 (fr) * 1992-09-02 1994-10-07 Air Liquide Procédé de formation d'une couche barrière sur une surface d'un objet en verre.
US5854131A (en) * 1996-06-05 1998-12-29 Advanced Micro Devices, Inc. Integrated circuit having horizontally and vertically offset interconnect lines
US5773361A (en) * 1996-11-06 1998-06-30 International Business Machines Corporation Process of making a microcavity structure and applications thereof
US6013584A (en) * 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US6073576A (en) 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
US6734564B1 (en) * 1999-01-04 2004-05-11 International Business Machines Corporation Specially shaped contact via and integrated circuit therewith
US20040134352A1 (en) * 2003-01-13 2004-07-15 David Stacey Silica trap for phosphosilicate glass deposition tool
DE102008035235B4 (de) * 2008-07-29 2014-05-22 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen
JP7294858B2 (ja) * 2019-04-09 2023-06-20 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112066A (en) * 1977-03-11 1978-09-30 Fujitsu Ltd Plasma treatment apparatus
JPS5559729A (en) * 1978-10-27 1980-05-06 Fujitsu Ltd Forming method of semiconductor surface insulating film
DE3173066D1 (en) * 1980-08-29 1986-01-09 Fujitsu Ltd Method of forming phosphosilicate glass films
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells

Also Published As

Publication number Publication date
KR900008970B1 (ko) 1990-12-15
JPS632330A (ja) 1988-01-07
US4781945A (en) 1988-11-01
EP0251650B1 (en) 1990-08-29
EP0251650A1 (en) 1988-01-07
JPH0260210B2 (ko) 1990-12-14
DE3764554D1 (de) 1990-10-04

Similar Documents

Publication Publication Date Title
KR880001042A (ko) 인규산 글라스(psg)코팅 형성 공정
GB1233908A (ko)
ES2005468A6 (es) Procedimiento para formar sobre un sustrato un revestimiento de capas multiples del tipo de ceramica o parecido.
DE69027496T2 (de) Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage
IL129580A0 (en) Apparatus and process for controlled atmosphere chemical vapor deposition
KR890004768A (ko) 다이어몬드의 합성방법 및 그 장치
EP0823491A3 (en) Gas injection system for CVD reactors
Rust et al. Carbon kinetic isotope effect in the oxidation of methane by hydroxyl
DE3361615D1 (en) Process for performing chemical reactions with participation of atomic hydrogen
RU98107836A (ru) Железный порошок, содержащий кремний, способ его получения и устройство для осуществления способа
ATE64692T1 (de) Masse zur entfernung durch chemiesorption von homogen geloesten beimengungen, insbesondere sauerstoff, aus gasen oder fluessigkeiten.
FR2612946B1 (fr) Procede et installation pour le depot chimique de revetements ultradurs a temperature moderee
BR9907692A (pt) Revestimento semelhante a polìmero polar
SE8002596L (sv) Forfarande for framstellning av cyanvete
ES2006119A6 (es) Procedimiento de obtencion de nitruro de silicio.
Prasad Some aspects of the stratospheric Cl-ClO-Cl cycle: Possible roles of ClO*, ClNO3 and HOCl
ES8700451A1 (es) Un metodo para el formado de una fibra optica con recubri- miento hermetico
ATE902T1 (de) Traegerloser metallkatalysator zur russfreien partiellen oxidation von fluessigen kohlenwasserstoffen mit luft.
ATE79418T1 (de) Verfahren zur herstellung von schichten aus einem oxidkeramischen supraleitermaterial auf einem substrat mittels cvd-prozess.
GB955700A (en) Process for the production of coatings of very pure silicon carbide free from bindingagents
Burk The thermal decomposition of ammonia upon the surface of a molybdenum wire
FR2232613A1 (en) Deposition from vapour phase using laser heating - boron cpds. obtd. on silica, carbon or tungsten substrates
US1252726A (en) Process and apparatus for accelerating chemical reactions.
Buchta et al. Investigation of the Reactions of Tetramethylsilane and Trimethylchlorosilane with O (3P) in the Gas Phase
SU1224281A1 (ru) Способ бурлени стекломассы и устройство дл его осуществлени

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20011205

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee