DE3764554D1 - Verfahren zum niederschlagen von phosphorsilikatglasschichten. - Google Patents

Verfahren zum niederschlagen von phosphorsilikatglasschichten.

Info

Publication number
DE3764554D1
DE3764554D1 DE8787305566T DE3764554T DE3764554D1 DE 3764554 D1 DE3764554 D1 DE 3764554D1 DE 8787305566 T DE8787305566 T DE 8787305566T DE 3764554 T DE3764554 T DE 3764554T DE 3764554 D1 DE3764554 D1 DE 3764554D1
Authority
DE
Germany
Prior art keywords
depositing
glass layers
phosphorsilicate glass
phosphorsilicate
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787305566T
Other languages
English (en)
Inventor
Masahide Nishimura
Kanetake Takasaki
Kenji Koyama
Atsuhiro Tsukune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3764554D1 publication Critical patent/DE3764554D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/471—Inorganic layers
    • H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
DE8787305566T 1986-06-23 1987-06-23 Verfahren zum niederschlagen von phosphorsilikatglasschichten. Expired - Fee Related DE3764554D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61144919A JPS632330A (ja) 1986-06-23 1986-06-23 化学気相成長方法

Publications (1)

Publication Number Publication Date
DE3764554D1 true DE3764554D1 (de) 1990-10-04

Family

ID=15373285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787305566T Expired - Fee Related DE3764554D1 (de) 1986-06-23 1987-06-23 Verfahren zum niederschlagen von phosphorsilikatglasschichten.

Country Status (5)

Country Link
US (1) US4781945A (de)
EP (1) EP0251650B1 (de)
JP (1) JPS632330A (de)
KR (1) KR900008970B1 (de)
DE (1) DE3764554D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5112776A (en) * 1988-11-10 1992-05-12 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
US5244841A (en) * 1988-11-10 1993-09-14 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
EP0419053B1 (de) * 1989-08-31 1997-12-29 AT&T Corp. Methode und Vorrichtung zur Ablagerung einer isolierten Schicht
US5328872A (en) * 1989-12-29 1994-07-12 At&T Bell Laboratories Method of integrated circuit manufacturing using deposited oxide
DE69231390D1 (de) * 1991-06-10 2000-10-05 At & T Corp Anisotropische Ablagerung von Dielektrika
US5434110A (en) * 1992-06-15 1995-07-18 Materials Research Corporation Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates
FR2695118B1 (fr) * 1992-09-02 1994-10-07 Air Liquide Procédé de formation d'une couche barrière sur une surface d'un objet en verre.
US5854131A (en) * 1996-06-05 1998-12-29 Advanced Micro Devices, Inc. Integrated circuit having horizontally and vertically offset interconnect lines
US5773361A (en) * 1996-11-06 1998-06-30 International Business Machines Corporation Process of making a microcavity structure and applications thereof
US6013584A (en) * 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US6073576A (en) 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
US6734564B1 (en) * 1999-01-04 2004-05-11 International Business Machines Corporation Specially shaped contact via and integrated circuit therewith
US20040134352A1 (en) * 2003-01-13 2004-07-15 David Stacey Silica trap for phosphosilicate glass deposition tool
DE102008035235B4 (de) * 2008-07-29 2014-05-22 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen
JP7294858B2 (ja) * 2019-04-09 2023-06-20 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112066A (en) * 1977-03-11 1978-09-30 Fujitsu Ltd Plasma treatment apparatus
JPS5559729A (en) * 1978-10-27 1980-05-06 Fujitsu Ltd Forming method of semiconductor surface insulating film
DE3173066D1 (en) * 1980-08-29 1986-01-09 Fujitsu Ltd Method of forming phosphosilicate glass films
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells

Also Published As

Publication number Publication date
KR900008970B1 (ko) 1990-12-15
US4781945A (en) 1988-11-01
EP0251650B1 (de) 1990-08-29
EP0251650A1 (de) 1988-01-07
JPS632330A (ja) 1988-01-07
JPH0260210B2 (de) 1990-12-14
KR880001042A (ko) 1988-03-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee