KR890004768A - 다이어몬드의 합성방법 및 그 장치 - Google Patents

다이어몬드의 합성방법 및 그 장치 Download PDF

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Publication number
KR890004768A
KR890004768A KR1019880011150A KR880011150A KR890004768A KR 890004768 A KR890004768 A KR 890004768A KR 1019880011150 A KR1019880011150 A KR 1019880011150A KR 880011150 A KR880011150 A KR 880011150A KR 890004768 A KR890004768 A KR 890004768A
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Prior art keywords
diamond
synthesizing
carbon
source gas
carbon source
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KR1019880011150A
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KR900007668B1 (ko
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도시미찌 이또
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홍고오 므쯔미
이데미쯔세끼유가가꾸 가부시기가이샤
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/08—Application of shock waves for chemical reactions or for modifying the crystal structure of substances
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

다이어몬드의 합성방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 다이어몬드의 합성장치의 일예의 개략도.
제2도는 반응실내의 기재에 대해서, 여러가지 방향으로부터 마이크로파가 도입되는 상태를 도시한 모식도.
* 도면의 주요부분에 대한 부호의 설명
1 : 마이크로파 발진기 2 : 마이크로파 분기관
3 : 도파관 4 : 반응실
7 : 기재

Claims (10)

  1. 탄소원가스와 수소가스와의 혼합가스에 마이크로파를 조사하고, 플라즈마를 형성시키므로서 활성화된 이 혼합가스를 기재에 접촉시켜서 다이어몬드를 석출시킴에 있어서 마이크로파를 이 기재에 대해서 복수방향으로부터 도입하는 것을 특징으로 하는 다이어몬드의 합성방법.
  2. 제1항에 있어서, 상기 탄소원가스가 산소를 함유한 탄소화합물, 질소를 함유한 탄소화합물 및 탄화수소로 이루어진 군으로부터 선택되는 적어도 1종인 것을 특징으로 하는 다이어몬드의 합성방법.
  3. 제1항에 있어서, 상기 탄소원가스가 산소를 함유한 탄소화합물인 다이어몬드의 합성방법.
  4. 제1항에 있어서, 상기 탄소원가스가 일산화탄소, 이산화탄소 및 아세톤으로 이루어진 군으로부터 선택되는 적어도 1종인 것을 특징으로 하는 다이어몬드의 제조방법.
  5. 제1항에 있어서, 상기 기재가 금속, 금속산화물, 금속질화물, 금속탄화물, 합금, 서어밋, 유리 및 세라믹스로 이루어진 군으로부터 선택되는 적어도 1종인 것을 특징으로 하는 다이어몬드의 합성방법.
  6. 제1항에 있어서, 상기 기재가 실리콘인 것을 특징으로 하는 다이어몬드의 제조방법.
  7. 제1항에 있어서, 상기 탄소원가스의 혼합가스에 있어서의 농도가 0.1용량%이상 90용량%이하인 것을 특징으로 하는 다이어몬드의 합성방법.
  8. 제1항에 있어서, 다이어몬드를 석출시킴에 있어서, 기재표면을 400∼1200℃로 가열하고, 반응압력을 0.001∼1000Torr로 하고, 마이크로파가 ISM 주파대인 것을 특징으로 하는 다이어몬드의 합성방법.
  9. 제8항에 있어서, 마이크로파가 2.45GHz인것을 특징으로하는 다이어몬드의 합성방법.
  10. 마이크로파를 발신하는 적어도 1개의 마이크로파의 발신기와, 이 마이크로파 발신기로부터 발신된 마이크로파를 다이어몬드석출용 기재에 대해서 복수 방향으로부터 도입하기 위한 복수개의 도파관과, 이 도파관에 접속되고, 또한 플라즈마를 발생시켜서 다이어몬드를 석출시켜, 이 기재표면에 다이어몬드박막을 형성시키기 위한 반응실로 구성되는 것을 특징으로 하는 다이어몬드의 합성장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880011150A 1987-09-01 1988-08-31 다이어몬드의 합성방법 및 그 장치 KR900007668B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-218138 1987-09-01
JP62218138A JPS6461396A (en) 1987-09-01 1987-09-01 Synthesis of diamond and installation therefor

Publications (2)

Publication Number Publication Date
KR890004768A true KR890004768A (ko) 1989-05-09
KR900007668B1 KR900007668B1 (ko) 1990-10-18

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Country Link
US (1) US4869924A (ko)
EP (1) EP0305903B1 (ko)
JP (1) JPS6461396A (ko)
KR (1) KR900007668B1 (ko)
DE (1) DE3873220T2 (ko)

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Publication number Priority date Publication date Assignee Title
KR100583500B1 (ko) * 2003-11-14 2006-05-24 한국가스공사 마이크로웨이브 플라즈마 반응기를 이용한 카본블랙 및수소의 제조공정

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KR100583500B1 (ko) * 2003-11-14 2006-05-24 한국가스공사 마이크로웨이브 플라즈마 반응기를 이용한 카본블랙 및수소의 제조공정

Also Published As

Publication number Publication date
US4869924A (en) 1989-09-26
JPS6461396A (en) 1989-03-08
DE3873220D1 (de) 1992-09-03
EP0305903A1 (en) 1989-03-08
DE3873220T2 (de) 1993-03-18
EP0305903B1 (en) 1992-07-29
KR900007668B1 (ko) 1990-10-18

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