ES8606524A1 - Un procedimiento para depositar un revestimiento de un ni- truro de metal de transicion seleccionado sobre un substrato - Google Patents

Un procedimiento para depositar un revestimiento de un ni- truro de metal de transicion seleccionado sobre un substrato

Info

Publication number
ES8606524A1
ES8606524A1 ES546703A ES546703A ES8606524A1 ES 8606524 A1 ES8606524 A1 ES 8606524A1 ES 546703 A ES546703 A ES 546703A ES 546703 A ES546703 A ES 546703A ES 8606524 A1 ES8606524 A1 ES 8606524A1
Authority
ES
Spain
Prior art keywords
transition metal
substrate
thin film
film deposition
metal nitrides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES546703A
Other languages
English (en)
Other versions
ES546703A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ATK Launch Systems LLC
Original Assignee
Morton Thiokol Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Morton Thiokol Inc filed Critical Morton Thiokol Inc
Publication of ES8606524A1 publication Critical patent/ES8606524A1/es
Publication of ES546703A0 publication Critical patent/ES546703A0/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PROCEDIMIENTO PARA DEPOSITAR UN REVESTIMIENTO DE UN NITRURO DE METAL DE TRANSICION SELECCIONADO, SOBRE UN SUSTRATO. COMPRENDE: A) SITUAR AL SUSTRATO EN UNA CAMARA DE DEPOSICION; B) MEZCLAR A UN COMPUESTO DE METAL DE TRANSICION DE FORMULA (MRX) Y EN ESTADO LIQUIDO CON UN GAS PORTADOR COMO UNA MEZCLA DE HIDROGENO Y NITROGENO ENTRE C20J Y 60JC EN UN BORBOTEADOR; C) TRANSPORTAR A LA MEZCLA DE COMPUESTO DE METAL DE TRANSICION Y GAS PORTADOR HASTA LA CAMARA DE DEPOSICION A TRAVES DE UNA BOMBA DE VACIO; Y D) DEPOSITAR AL COMPUESTO DE METAL DE TRANSICION SOBRE EL SUSTRATO, ENTRE 400JC Y 800JC Y A UNA PRESION ENTRE 0,2 Y 100 TORR. SIENDO: R, AZIDA, HALOGENO Y -NRKR2; R1 Y R2, HIDROGENO, ALQUILO INFERIOR, CICLOPENTADIENILO Y OTROS; M, METAL DE TRANSICION SELECCIONADO ENTRE TI, NB, ZR, HF, MO, W, CR Y V; Y X UN NUMERO ENTERO ENTRE 2 O 6. EL SUSTRATO SE SELECCIONA ENTRE ARSENIURO DE GALIO Y DE SILICIO Y EL COMPUESTO DE METAL DE TRANSICION SE SELECCIONA ENTRE, TETRAQUIS (DIMETILAMINO)TITANIO; TETRAQUIS(DIETILAMINO)TITANIO Y TETRAQUIS(DIETILAMINO)CIRCONIO.
ES546703A 1984-09-05 1985-09-04 Un procedimiento para depositar un revestimiento de un ni- truro de metal de transicion seleccionado sobre un substrato Expired ES8606524A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64811584A 1984-09-05 1984-09-05

Publications (2)

Publication Number Publication Date
ES8606524A1 true ES8606524A1 (es) 1986-04-01
ES546703A0 ES546703A0 (es) 1986-04-01

Family

ID=24599500

Family Applications (1)

Application Number Title Priority Date Filing Date
ES546703A Expired ES8606524A1 (es) 1984-09-05 1985-09-04 Un procedimiento para depositar un revestimiento de un ni- truro de metal de transicion seleccionado sobre un substrato

Country Status (5)

Country Link
EP (1) EP0174743A3 (es)
JP (1) JPS6169969A (es)
KR (1) KR860002589A (es)
ES (1) ES8606524A1 (es)
IL (1) IL76098A0 (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2067410A1 (es) * 1993-06-10 1995-03-16 Univ Vigo Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa.

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film
JP2776826B2 (ja) * 1988-04-15 1998-07-16 株式会社日立製作所 半導体装置およびその製造方法
FR2635119B1 (fr) * 1988-08-04 1993-02-19 France Etat Armement Procede de depot en phase gazeuse de composes du titane
JP2544477B2 (ja) * 1989-03-31 1996-10-16 シャープ株式会社 窒化チタン膜形成方法
DE69018307T2 (de) * 1989-05-09 1995-08-03 Fujitsu Ltd Verfahren zur Herstellung von Kontakten in Halbleiterbauelementen.
US5232872A (en) * 1989-05-09 1993-08-03 Fujitsu Limited Method for manufacturing semiconductor device
JP2747036B2 (ja) * 1989-07-07 1998-05-06 日本電信電話株式会社 薄膜形成方法
US5028565A (en) * 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
US5139825A (en) * 1989-11-30 1992-08-18 President And Fellows Of Harvard College Process for chemical vapor deposition of transition metal nitrides
EP0450106A1 (de) * 1990-03-30 1991-10-09 Siemens Aktiengesellschaft Verfahren und Vorrichtung zur Herstellung einer Titannitrid-Schicht für höchstintegrierte Schaltungen mittels chemischer Dampfphasenabscheidung
US5089438A (en) * 1991-04-26 1992-02-18 At&T Bell Laboratories Method of making an article comprising a TiNx layer
EP0610728A1 (de) * 1993-02-09 1994-08-17 Siemens Aktiengesellschaft Verfahren zur mikrowellenunterstützten chemischen Abscheidung von Metall- und Metalloidschichten aus der Gasphase
US6155198A (en) * 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
EP0711846A1 (en) * 1994-11-14 1996-05-15 Applied Materials, Inc. Titanium nitride deposited by chemical vapor deposition
KR0148325B1 (ko) * 1995-03-04 1998-12-01 김주용 반도체 소자의 금속 배선 형성방법
EP0776991B1 (en) * 1995-12-05 2002-02-06 Applied Materials, Inc. Plasma annealing of thin films
DE19736449A1 (de) * 1997-08-21 1999-02-25 Gfe Met & Mat Gmbh Verbundwerkstoff
US6969539B2 (en) 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
JP4644359B2 (ja) * 2000-11-30 2011-03-02 ルネサスエレクトロニクス株式会社 成膜方法
DE102005033579A1 (de) * 2005-07-19 2007-01-25 H.C. Starck Gmbh Verfahren zur Herstellung dünner Hafnium- oder Zirkonnitrid-Schichten
JP5170590B2 (ja) * 2010-12-08 2013-03-27 株式会社トリケミカル研究所 導電性バリア膜形成材料、導電性バリア膜形成方法、及び配線膜形成方法
JP5170589B2 (ja) * 2010-12-08 2013-03-27 株式会社トリケミカル研究所 導電性バリア膜形成材料、導電性バリア膜形成方法、及び配線膜形成方法
RU2506344C1 (ru) * 2012-10-25 2014-02-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Самарский государственный технический университет" Способ получения покрытия нитрида титана
CN111620312A (zh) * 2020-06-09 2020-09-04 合肥中航纳米技术发展有限公司 一种纳米氮化铬粉体的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959557A (en) * 1974-11-04 1976-05-25 Minnesota Mining And Manufacturing Company Wear-resistant, nonabrading tic article and process for making
JPS55164072A (en) * 1979-06-08 1980-12-20 Sumitomo Electric Ind Ltd Coating
JPS58188157A (ja) * 1982-04-28 1983-11-02 Toshiba Corp 半導体装置およびその製造方法
US4524718A (en) * 1982-11-22 1985-06-25 Gordon Roy G Reactor for continuous coating of glass

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2067410A1 (es) * 1993-06-10 1995-03-16 Univ Vigo Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa.

Also Published As

Publication number Publication date
KR860002589A (ko) 1986-04-26
EP0174743A2 (en) 1986-03-19
EP0174743A3 (en) 1988-06-08
JPS6169969A (ja) 1986-04-10
IL76098A0 (en) 1985-12-31
ES546703A0 (es) 1986-04-01

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