KR860002589A - 전이 금속 질화물 박막 기착법 - Google Patents
전이 금속 질화물 박막 기착법 Download PDFInfo
- Publication number
- KR860002589A KR860002589A KR1019850006470A KR850006470A KR860002589A KR 860002589 A KR860002589 A KR 860002589A KR 1019850006470 A KR1019850006470 A KR 1019850006470A KR 850006470 A KR850006470 A KR 850006470A KR 860002589 A KR860002589 A KR 860002589A
- Authority
- KR
- South Korea
- Prior art keywords
- transition metal
- compound
- substrate
- metal nitride
- carrier gas
- Prior art date
Links
- 229910052723 transition metal Inorganic materials 0.000 title claims 6
- -1 Transition Metal Nitride Chemical class 0.000 title claims 4
- 238000000427 thin-film deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims 9
- 150000001875 compounds Chemical class 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 150000003623 transition metal compounds Chemical class 0.000 claims 5
- 239000012159 carrier gas Substances 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- PXSHDOMYSLTUTJ-UHFFFAOYSA-N [Ti]N Chemical compound [Ti]N PXSHDOMYSLTUTJ-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Chemical group C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 150000003624 transition metals Chemical class 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- LVWKFXPKYFRDAY-UHFFFAOYSA-L [O-]OOOOOOO[O-].[K+].[K+] Chemical class [O-]OOOOOOO[O-].[K+].[K+] LVWKFXPKYFRDAY-UHFFFAOYSA-L 0.000 claims 1
- 125000000852 azido group Chemical group *N=[N+]=[N-] 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Chemical group 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Chemical group 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims 1
- 238000005979 thermal decomposition reaction Methods 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Chemical group 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Chemically Coating (AREA)
- Formation Of Insulating Films (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (11)
- 기착 쳄버에 기판을 놓고, 상기 기판상에 기착될 전이 금속질화물을 선택하고 식 MRX의 전이 금속화합물을 그 화합물에 대한 열분해성 질화물-생성조건으로 유지되는 기착쳄버로 유입시켜 상기 기판상에 전이 금속 질화물을 기착시키는 것을 특징으로 하는, 기판상에 전이 금속 질화물의 코팅을 기착시키는 방법.(상기식 MPX에서 M은 선택된 전이 금속; 각 R은 아지드, 할로겐과로부터 선택되는데, 이때 R1과 R2는 수소, 저급알킬, 사이클로펜타디에닐과 알킬 치환된 사이콜로펜타디에닐로부터 선택되며; 최소한 하나의 상기 R이 할로겐이 아니며; X는 2 내지 6의 정수이다)
- 제1항에 있어서, 그 열분해 조건이 약 400℃ 내지 800℃의 온도와 약 0.2torr 내지 100torr의 상기 전이 금속 화합물의 부분압을 포함하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 액체상태로 상기 전이 금속 화합물을 유지시켜 담체 기체상에 그 화합물에 실리도록해서 그 화합물과 담체를 상기 기착 쳄버로 운반시켜 그 유입 단계를 수행하는 것을 특징으로 하는 방법.
- 제3항에 있어서, 상기 전이 금속 화합물이 버블러에서 상기 담체 기체상에 실리는 것을 특징으로 하는 방법.
- 제3항에 있어서, 상기 담체 가스가 수소와 질소의 혼합물을 포함하는 것을 특징으로 하는 방법.
- 제5항에 있어서, 상기 담체 가스가 수소와 하이드라진 혼합물을 포함하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 기판이 실리콘과 칼륨 비산화물로 이루어지는 그룹에서 선택되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 전이 금속 질화물의 기착 속도가 분당 최소 10Å인 것을 특징으로 하는 방법.
- 제1항에 있어서, M이 티타듐; 니오븀; 지르코늄; 하프늄; 탄타륨; 몰리브데늄; 텅스텐; 크로늄과 바나듐으로부터 선택되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 전이 금속의 화합물이 테트라키스디메틸 아미노티타늄; 테트라키스디에틸아미노티타늄; 테트라키스디에틸 아미노티타늄; 테트라키스디메틸아미노지르코늄; 테트라키스디에틸아미노지르코늄으로부터 선택되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 전이 금속 화합물이 테트라키스(디메틸아미노)티타늄인 것을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64811584A | 1984-09-05 | 1984-09-05 | |
US648,115 | 1991-01-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR860002589A true KR860002589A (ko) | 1986-04-26 |
Family
ID=24599500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850006470A KR860002589A (ko) | 1984-09-05 | 1985-09-05 | 전이 금속 질화물 박막 기착법 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0174743A3 (ko) |
JP (1) | JPS6169969A (ko) |
KR (1) | KR860002589A (ko) |
ES (1) | ES8606524A1 (ko) |
IL (1) | IL76098A0 (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740606A (en) * | 1986-07-01 | 1988-04-26 | Morton Thiokol, Inc. | Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films |
US4792467A (en) * | 1987-08-17 | 1988-12-20 | Morton Thiokol, Inc. | Method for vapor phase deposition of gallium nitride film |
JP2776826B2 (ja) * | 1988-04-15 | 1998-07-16 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
FR2635119B1 (fr) * | 1988-08-04 | 1993-02-19 | France Etat Armement | Procede de depot en phase gazeuse de composes du titane |
JP2544477B2 (ja) * | 1989-03-31 | 1996-10-16 | シャープ株式会社 | 窒化チタン膜形成方法 |
US5232872A (en) * | 1989-05-09 | 1993-08-03 | Fujitsu Limited | Method for manufacturing semiconductor device |
DE69018307T2 (de) * | 1989-05-09 | 1995-08-03 | Fujitsu Ltd | Verfahren zur Herstellung von Kontakten in Halbleiterbauelementen. |
JP2747036B2 (ja) * | 1989-07-07 | 1998-05-06 | 日本電信電話株式会社 | 薄膜形成方法 |
US5028565A (en) * | 1989-08-25 | 1991-07-02 | Applied Materials, Inc. | Process for CVD deposition of tungsten layer on semiconductor wafer |
US5139825A (en) * | 1989-11-30 | 1992-08-18 | President And Fellows Of Harvard College | Process for chemical vapor deposition of transition metal nitrides |
EP0450106A1 (de) * | 1990-03-30 | 1991-10-09 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zur Herstellung einer Titannitrid-Schicht für höchstintegrierte Schaltungen mittels chemischer Dampfphasenabscheidung |
US5089438A (en) * | 1991-04-26 | 1992-02-18 | At&T Bell Laboratories | Method of making an article comprising a TiNx layer |
EP0610728A1 (de) * | 1993-02-09 | 1994-08-17 | Siemens Aktiengesellschaft | Verfahren zur mikrowellenunterstützten chemischen Abscheidung von Metall- und Metalloidschichten aus der Gasphase |
ES2067410B1 (es) * | 1993-06-10 | 1995-11-01 | Univ Vigo | Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa. |
US6155198A (en) * | 1994-11-14 | 2000-12-05 | Applied Materials, Inc. | Apparatus for constructing an oxidized film on a semiconductor wafer |
EP0711846A1 (en) * | 1994-11-14 | 1996-05-15 | Applied Materials, Inc. | Titanium nitride deposited by chemical vapor deposition |
KR0148325B1 (ko) * | 1995-03-04 | 1998-12-01 | 김주용 | 반도체 소자의 금속 배선 형성방법 |
DE69619075T2 (de) * | 1995-12-05 | 2002-10-02 | Applied Materials, Inc. | Plasmatempern von Dünnschichten |
DE19736449A1 (de) * | 1997-08-21 | 1999-02-25 | Gfe Met & Mat Gmbh | Verbundwerkstoff |
JP5290488B2 (ja) | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
JP4644359B2 (ja) * | 2000-11-30 | 2011-03-02 | ルネサスエレクトロニクス株式会社 | 成膜方法 |
DE102005033579A1 (de) * | 2005-07-19 | 2007-01-25 | H.C. Starck Gmbh | Verfahren zur Herstellung dünner Hafnium- oder Zirkonnitrid-Schichten |
JP5170590B2 (ja) * | 2010-12-08 | 2013-03-27 | 株式会社トリケミカル研究所 | 導電性バリア膜形成材料、導電性バリア膜形成方法、及び配線膜形成方法 |
JP5170589B2 (ja) * | 2010-12-08 | 2013-03-27 | 株式会社トリケミカル研究所 | 導電性バリア膜形成材料、導電性バリア膜形成方法、及び配線膜形成方法 |
RU2506344C1 (ru) * | 2012-10-25 | 2014-02-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Самарский государственный технический университет" | Способ получения покрытия нитрида титана |
CN111620312A (zh) * | 2020-06-09 | 2020-09-04 | 合肥中航纳米技术发展有限公司 | 一种纳米氮化铬粉体的制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3959557A (en) * | 1974-11-04 | 1976-05-25 | Minnesota Mining And Manufacturing Company | Wear-resistant, nonabrading tic article and process for making |
JPS55164072A (en) * | 1979-06-08 | 1980-12-20 | Sumitomo Electric Ind Ltd | Coating |
JPS58188157A (ja) * | 1982-04-28 | 1983-11-02 | Toshiba Corp | 半導体装置およびその製造方法 |
US4524718A (en) * | 1982-11-22 | 1985-06-25 | Gordon Roy G | Reactor for continuous coating of glass |
-
1985
- 1985-08-13 EP EP85305747A patent/EP0174743A3/en not_active Withdrawn
- 1985-08-15 IL IL76098A patent/IL76098A0/xx unknown
- 1985-09-04 ES ES546703A patent/ES8606524A1/es not_active Expired
- 1985-09-05 KR KR1019850006470A patent/KR860002589A/ko not_active Application Discontinuation
- 1985-09-05 JP JP60196865A patent/JPS6169969A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IL76098A0 (en) | 1985-12-31 |
EP0174743A3 (en) | 1988-06-08 |
ES546703A0 (es) | 1986-04-01 |
JPS6169969A (ja) | 1986-04-10 |
ES8606524A1 (es) | 1986-04-01 |
EP0174743A2 (en) | 1986-03-19 |
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