KR920003441A - CVD코팅된 Si를 함침한 SiC제품 및 그 제조방법 - Google Patents

CVD코팅된 Si를 함침한 SiC제품 및 그 제조방법 Download PDF

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Publication number
KR920003441A
KR920003441A KR1019910011171A KR910011171A KR920003441A KR 920003441 A KR920003441 A KR 920003441A KR 1019910011171 A KR1019910011171 A KR 1019910011171A KR 910011171 A KR910011171 A KR 910011171A KR 920003441 A KR920003441 A KR 920003441A
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South Korea
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sic
impregnated
cvd
substrate
manufacturing
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KR1019910011171A
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KR0145692B1 (ko
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다쯔오 노자와
다까히로 다베이
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가스가야 기요히코
도시바세라믹스 가부시끼가이샤
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Publication of KR920003441A publication Critical patent/KR920003441A/ko
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Publication of KR0145692B1 publication Critical patent/KR0145692B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음

Description

CVD코팅된 Si를 함침한 SiC제품 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예를 표시하는 CVD 코팅된 Si를 함침한 SiC제품의 요부 개념도,
제3도는 본 발명품과 종래품과의 온도차와 굽힘강도와의 관계를 비교해 도시한 그래프도.

Claims (2)

  1. Si를 함clagksiC개재에 그 기재의 표면부터 두께의 2%~15%영역에서 함침된 Si를 제거하여 형성된 Si제거층과, 상기 Si제거층위에 CVD(화학증착)법에 의해 형성된 SiC막을 가지고 있는 것을 특징으로 하는 CVD 코팅된 Si를 함침한 SiC제품.
  2. Si를 함침한 SiC기재에서 800℃이상의 온도에서 할로겐 기체 혹은 할로겐화 수소기체를 흐르게 하거나, 또는 Si를 함침한 SiC기재를 센 초산 수용액중에 침적시키는 것에 의해, 또는 SiC를 합침한 SiC기재의 표면으로부터 두께의 2~15%영역에서 함침된 Si를 제거한 후, 그 Si제거층위에 CVD법에 의해 SiC막을 형성시킨 것을 특징으로 하는 CVD 코팅된 Si를 함침한 SiC제품의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910011171A 1990-07-02 1991-07-02 CVD코팅된 Si를 함침한 SiC 제품 및 그 제조방법 KR0145692B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP90-174845 1990-07-02
JP2174845A JPH0465376A (ja) 1990-07-02 1990-07-02 ＣＶＤコートＳｉ含浸ＳｉＣ製品及びその製造方法
JP2-174845 1990-07-02

Publications (2)

Publication Number Publication Date
KR920003441A true KR920003441A (ko) 1992-02-29
KR0145692B1 KR0145692B1 (ko) 1998-11-02

Family

ID=15985660

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Application Number Title Priority Date Filing Date
KR1019910011171A KR0145692B1 (ko) 1990-07-02 1991-07-02 CVD코팅된 Si를 함침한 SiC 제품 및 그 제조방법

Country Status (3)

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EP (1) EP0464447A1 (ko)
JP (1) JPH0465376A (ko)
KR (1) KR0145692B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2975927B1 (ja) * 1998-06-10 1999-11-10 助川電気工業株式会社 板体加熱装置
JPH11354526A (ja) * 1998-06-10 1999-12-24 Sukegawa Electric Co Ltd 板体加熱装置
GR1006416B (el) * 2007-01-18 2009-06-01 Γεωργιος Βεκινης Υβριδικο συστημα θερμομηχανικης προστασιας διαστημοπλοιων και εξερευνητικων ρομποτικων σκαφων
JP2014027093A (ja) * 2012-07-26 2014-02-06 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法
JP6798000B1 (ja) * 2019-12-23 2020-12-09 株式会社フェローテックマテリアルテクノロジーズ ＳｉＣとＳｉによる混合部材の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6311589A (ja) * 1986-07-01 1988-01-19 イビデン株式会社 耐熱性治具及びその製造方法
JPH0521297Y2 (ko) * 1986-07-31 1993-06-01
JPH03146470A (ja) * 1989-10-31 1991-06-21 Shin Etsu Chem Co Ltd 炭化ケイ素質材料

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Publication number Publication date
JPH0465376A (ja) 1992-03-02
EP0464447A1 (en) 1992-01-08
KR0145692B1 (ko) 1998-11-02

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