DE60139463D1 - Prozess zur herstellung von dünnfilmtransistoren - Google Patents

Prozess zur herstellung von dünnfilmtransistoren

Info

Publication number
DE60139463D1
DE60139463D1 DE60139463T DE60139463T DE60139463D1 DE 60139463 D1 DE60139463 D1 DE 60139463D1 DE 60139463 T DE60139463 T DE 60139463T DE 60139463 T DE60139463 T DE 60139463T DE 60139463 D1 DE60139463 D1 DE 60139463D1
Authority
DE
Germany
Prior art keywords
substrate
manufacture
thin film
film transistors
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60139463T
Other languages
English (en)
Inventor
Kevin L Denis
Yu Chen
Paul S Drzaic
Joseph M Jacobson
Peter T Kazlas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
E Ink Corp
Original Assignee
E Ink Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E Ink Corp filed Critical E Ink Corp
Application granted granted Critical
Publication of DE60139463D1 publication Critical patent/DE60139463D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Formation Of Insulating Films (AREA)
DE60139463T 2000-04-18 2001-04-17 Prozess zur herstellung von dünnfilmtransistoren Expired - Lifetime DE60139463D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19773100P 2000-04-18 2000-04-18
PCT/US2001/012429 WO2001080287A2 (en) 2000-04-18 2001-04-17 Process for fabricating thin film transistors

Publications (1)

Publication Number Publication Date
DE60139463D1 true DE60139463D1 (de) 2009-09-17

Family

ID=22730530

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60139463T Expired - Lifetime DE60139463D1 (de) 2000-04-18 2001-04-17 Prozess zur herstellung von dünnfilmtransistoren

Country Status (9)

Country Link
US (2) US6825068B2 (de)
EP (1) EP1275156B1 (de)
JP (1) JP2003531487A (de)
KR (1) KR100767233B1 (de)
CN (1) CN1237623C (de)
AT (1) ATE438927T1 (de)
AU (1) AU2001253575A1 (de)
DE (1) DE60139463D1 (de)
WO (1) WO2001080287A2 (de)

Families Citing this family (197)

* Cited by examiner, † Cited by third party
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US6825068B2 (en) 2004-11-30
WO2001080287A3 (en) 2002-05-23
US20050067656A1 (en) 2005-03-31
EP1275156B1 (de) 2009-08-05
AU2001253575A1 (en) 2001-10-30
EP1275156A2 (de) 2003-01-15
KR20020089479A (ko) 2002-11-29
CN1441967A (zh) 2003-09-10
WO2001080287A2 (en) 2001-10-25
CN1237623C (zh) 2006-01-18
US7365394B2 (en) 2008-04-29
US20020019081A1 (en) 2002-02-14
JP2003531487A (ja) 2003-10-21
ATE438927T1 (de) 2009-08-15
KR100767233B1 (ko) 2007-10-17

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