DE60127486D1 - Verfahren zur Abscheidung von Oxyden und Nitriden mit Zusammensetzungsgradienten - Google Patents

Verfahren zur Abscheidung von Oxyden und Nitriden mit Zusammensetzungsgradienten

Info

Publication number
DE60127486D1
DE60127486D1 DE60127486T DE60127486T DE60127486D1 DE 60127486 D1 DE60127486 D1 DE 60127486D1 DE 60127486 T DE60127486 T DE 60127486T DE 60127486 T DE60127486 T DE 60127486T DE 60127486 D1 DE60127486 D1 DE 60127486D1
Authority
DE
Germany
Prior art keywords
metalloid
metal
result
precursors
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60127486T
Other languages
English (en)
Other versions
DE60127486T2 (de
Inventor
Yoshihide Senzaki
John Anthony Thomas Norman
Arthur Kenneth Hochberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Application granted granted Critical
Publication of DE60127486D1 publication Critical patent/DE60127486D1/de
Publication of DE60127486T2 publication Critical patent/DE60127486T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/029—Graded interfaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Ceramic Products (AREA)
  • Saccharide Compounds (AREA)
DE60127486T 2000-04-10 2001-04-04 Verfahren zur Abscheidung von Oxyden und Nitriden mit Zusammensetzungsgradienten Expired - Fee Related DE60127486T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US546867 2000-04-10
US09/546,867 US6537613B1 (en) 2000-04-10 2000-04-10 Process for metal metalloid oxides and nitrides with compositional gradients

Publications (2)

Publication Number Publication Date
DE60127486D1 true DE60127486D1 (de) 2007-05-10
DE60127486T2 DE60127486T2 (de) 2007-12-13

Family

ID=24182359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127486T Expired - Fee Related DE60127486T2 (de) 2000-04-10 2001-04-04 Verfahren zur Abscheidung von Oxyden und Nitriden mit Zusammensetzungsgradienten

Country Status (8)

Country Link
US (1) US6537613B1 (de)
EP (1) EP1146140B1 (de)
JP (1) JP3588334B2 (de)
KR (1) KR100418461B1 (de)
AT (1) ATE358191T1 (de)
DE (1) DE60127486T2 (de)
HK (1) HK1039967B (de)
TW (1) TWI242055B (de)

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US6767795B2 (en) * 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6893984B2 (en) * 2002-02-20 2005-05-17 Micron Technology Inc. Evaporated LaA1O3 films for gate dielectrics
US7045430B2 (en) * 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
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US7192892B2 (en) * 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US6875693B1 (en) * 2003-03-26 2005-04-05 Lsi Logic Corporation Via and metal line interface capable of reducing the incidence of electro-migration induced voids
US7135369B2 (en) 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US20050070126A1 (en) * 2003-04-21 2005-03-31 Yoshihide Senzaki System and method for forming multi-component dielectric films
TW200506093A (en) * 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US7183186B2 (en) * 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US7192824B2 (en) * 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7049192B2 (en) * 2003-06-24 2006-05-23 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectrics
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
US7618681B2 (en) 2003-10-28 2009-11-17 Asm International N.V. Process for producing bismuth-containing oxide films
US20050233477A1 (en) * 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7091118B1 (en) * 2004-11-16 2006-08-15 Advanced Micro Devices, Inc. Replacement metal gate transistor with metal-rich silicon layer and method for making the same
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
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US20060264066A1 (en) * 2005-04-07 2006-11-23 Aviza Technology, Inc. Multilayer multicomponent high-k films and methods for depositing the same
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US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
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Also Published As

Publication number Publication date
EP1146140B1 (de) 2007-03-28
TWI242055B (en) 2005-10-21
US6537613B1 (en) 2003-03-25
EP1146140A1 (de) 2001-10-17
DE60127486T2 (de) 2007-12-13
HK1039967A1 (en) 2002-05-17
HK1039967B (zh) 2007-09-14
JP2002033317A (ja) 2002-01-31
KR100418461B1 (ko) 2004-02-14
KR20010090776A (ko) 2001-10-19
ATE358191T1 (de) 2007-04-15
JP3588334B2 (ja) 2004-11-10

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