TW350121B - Manufacturing method for O/N/O layer dielectric - Google Patents
Manufacturing method for O/N/O layer dielectricInfo
- Publication number
- TW350121B TW350121B TW085104461A TW85104461A TW350121B TW 350121 B TW350121 B TW 350121B TW 085104461 A TW085104461 A TW 085104461A TW 85104461 A TW85104461 A TW 85104461A TW 350121 B TW350121 B TW 350121B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- carrying
- manufacturing
- crystal silicon
- environment
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
A sort of manufacturing method for O/N/O layer dielectric, applicable for manufacturing of Ics, including the following steps: provision of a semiconductor substrate, having at least 1 multi-crystal silicon layer formed, of which surface there is a crude oxidized layer; in the environment of ammonia, carrying out a low-pressure fast thermal nitrification for removal of the crude oxidized layer; in the environment of nitrous oxide, carrying out the first low-pressure thermal oxidization process, for forming of the first multi-crystal silicon oxidized layer on the surface of the multi-crystal silicone layer; carrying out a fast thermal settlement, for forming of a nitrified silicon layer on the surface of the first multi-crystal silicon oxide layer; and in the environment of N2O for carrying out the second low-pressure thermal oxidization for forming of the second multi-crystal silicon oxide layer on the surface of the silicon nitride layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085104461A TW350121B (en) | 1996-04-15 | 1996-04-15 | Manufacturing method for O/N/O layer dielectric |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085104461A TW350121B (en) | 1996-04-15 | 1996-04-15 | Manufacturing method for O/N/O layer dielectric |
Publications (1)
Publication Number | Publication Date |
---|---|
TW350121B true TW350121B (en) | 1999-01-11 |
Family
ID=57939894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085104461A TW350121B (en) | 1996-04-15 | 1996-04-15 | Manufacturing method for O/N/O layer dielectric |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW350121B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7862343B1 (en) | 2009-06-25 | 2011-01-04 | Hon Hai Precision Ind. Co., Ltd. | Electrical connector having contact with upper terminal and lower terminal |
WO2023279835A1 (en) * | 2021-07-08 | 2023-01-12 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method therefor |
-
1996
- 1996-04-15 TW TW085104461A patent/TW350121B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7862343B1 (en) | 2009-06-25 | 2011-01-04 | Hon Hai Precision Ind. Co., Ltd. | Electrical connector having contact with upper terminal and lower terminal |
WO2023279835A1 (en) * | 2021-07-08 | 2023-01-12 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method therefor |
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