TW350121B - Manufacturing method for O/N/O layer dielectric - Google Patents

Manufacturing method for O/N/O layer dielectric

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Publication number
TW350121B
TW350121B TW085104461A TW85104461A TW350121B TW 350121 B TW350121 B TW 350121B TW 085104461 A TW085104461 A TW 085104461A TW 85104461 A TW85104461 A TW 85104461A TW 350121 B TW350121 B TW 350121B
Authority
TW
Taiwan
Prior art keywords
layer
carrying
manufacturing
crystal silicon
environment
Prior art date
Application number
TW085104461A
Other languages
Chinese (zh)
Inventor
zhi-xiang Zheng
Original Assignee
Uinted Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uinted Microelectronics Corp filed Critical Uinted Microelectronics Corp
Priority to TW085104461A priority Critical patent/TW350121B/en
Application granted granted Critical
Publication of TW350121B publication Critical patent/TW350121B/en

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  • Formation Of Insulating Films (AREA)

Abstract

A sort of manufacturing method for O/N/O layer dielectric, applicable for manufacturing of Ics, including the following steps: provision of a semiconductor substrate, having at least 1 multi-crystal silicon layer formed, of which surface there is a crude oxidized layer; in the environment of ammonia, carrying out a low-pressure fast thermal nitrification for removal of the crude oxidized layer; in the environment of nitrous oxide, carrying out the first low-pressure thermal oxidization process, for forming of the first multi-crystal silicon oxidized layer on the surface of the multi-crystal silicone layer; carrying out a fast thermal settlement, for forming of a nitrified silicon layer on the surface of the first multi-crystal silicon oxide layer; and in the environment of N2O for carrying out the second low-pressure thermal oxidization for forming of the second multi-crystal silicon oxide layer on the surface of the silicon nitride layer.
TW085104461A 1996-04-15 1996-04-15 Manufacturing method for O/N/O layer dielectric TW350121B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085104461A TW350121B (en) 1996-04-15 1996-04-15 Manufacturing method for O/N/O layer dielectric

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085104461A TW350121B (en) 1996-04-15 1996-04-15 Manufacturing method for O/N/O layer dielectric

Publications (1)

Publication Number Publication Date
TW350121B true TW350121B (en) 1999-01-11

Family

ID=57939894

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085104461A TW350121B (en) 1996-04-15 1996-04-15 Manufacturing method for O/N/O layer dielectric

Country Status (1)

Country Link
TW (1) TW350121B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7862343B1 (en) 2009-06-25 2011-01-04 Hon Hai Precision Ind. Co., Ltd. Electrical connector having contact with upper terminal and lower terminal
WO2023279835A1 (en) * 2021-07-08 2023-01-12 长鑫存储技术有限公司 Semiconductor structure and preparation method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7862343B1 (en) 2009-06-25 2011-01-04 Hon Hai Precision Ind. Co., Ltd. Electrical connector having contact with upper terminal and lower terminal
WO2023279835A1 (en) * 2021-07-08 2023-01-12 长鑫存储技术有限公司 Semiconductor structure and preparation method therefor

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