HK1039967B - 以組成梯度沉積氧化物和氮化物的方法 - Google Patents

以組成梯度沉積氧化物和氮化物的方法

Info

Publication number
HK1039967B
HK1039967B HK02101201.1A HK02101201A HK1039967B HK 1039967 B HK1039967 B HK 1039967B HK 02101201 A HK02101201 A HK 02101201A HK 1039967 B HK1039967 B HK 1039967B
Authority
HK
Hong Kong
Prior art keywords
metalloid
metal
deposition
result
precursors
Prior art date
Application number
HK02101201.1A
Other languages
English (en)
Other versions
HK1039967A1 (en
Inventor
Yoshihide Senzaki
John Anthony Thomas Norman
Arthur Kenneth Hochberg
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of HK1039967A1 publication Critical patent/HK1039967A1/xx
Publication of HK1039967B publication Critical patent/HK1039967B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0272Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/029Graded interfaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Saccharide Compounds (AREA)
  • Ceramic Products (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
HK02101201.1A 2000-04-10 2002-02-19 以組成梯度沉積氧化物和氮化物的方法 HK1039967B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/546,867 US6537613B1 (en) 2000-04-10 2000-04-10 Process for metal metalloid oxides and nitrides with compositional gradients

Publications (2)

Publication Number Publication Date
HK1039967A1 HK1039967A1 (en) 2002-05-17
HK1039967B true HK1039967B (zh) 2007-09-14

Family

ID=24182359

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02101201.1A HK1039967B (zh) 2000-04-10 2002-02-19 以組成梯度沉積氧化物和氮化物的方法

Country Status (8)

Country Link
US (1) US6537613B1 (zh)
EP (1) EP1146140B1 (zh)
JP (1) JP3588334B2 (zh)
KR (1) KR100418461B1 (zh)
AT (1) ATE358191T1 (zh)
DE (1) DE60127486T2 (zh)
HK (1) HK1039967B (zh)
TW (1) TWI242055B (zh)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849334B2 (en) 2001-08-17 2005-02-01 Neophotonics Corporation Optical materials and optical devices
US7554829B2 (en) 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
FI118804B (fi) * 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
FI117979B (fi) * 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
EP1772534A3 (en) 2000-09-28 2007-04-25 The President and Fellows of Harvard College Tungsten-containing and hafnium-containing precursors for vapor deposition
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
EP1256638B1 (en) * 2001-05-07 2008-03-26 Samsung Electronics Co., Ltd. Method of forming a multi-components thin film
US6391803B1 (en) * 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
JP2003124460A (ja) * 2001-10-15 2003-04-25 Atsushi Ogura ゲート酸化膜、素子、ゲート酸化膜形成方法、ゲート酸化膜形成材料
US6900122B2 (en) * 2001-12-20 2005-05-31 Micron Technology, Inc. Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
US6767795B2 (en) * 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6893984B2 (en) * 2002-02-20 2005-05-17 Micron Technology Inc. Evaporated LaA1O3 films for gate dielectrics
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7045430B2 (en) * 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7135421B2 (en) * 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7205218B2 (en) * 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
WO2004010469A2 (en) * 2002-07-18 2004-01-29 Aviza Technology, Inc. Atomic layer deposition of multi-metallic precursors
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6790791B2 (en) * 2002-08-15 2004-09-14 Micron Technology, Inc. Lanthanide doped TiOx dielectric films
JP2004079753A (ja) * 2002-08-16 2004-03-11 Tokyo Electron Ltd 半導体装置の製造方法
TW200408015A (en) * 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
US7199023B2 (en) * 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
US7084078B2 (en) * 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
US6958302B2 (en) 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7101813B2 (en) 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
DE10303925B4 (de) 2003-01-31 2007-06-06 Advanced Micro Devices, Inc., Sunnyvale Dielektrische Barrierenschicht für eine Kupfermetallisierungsschicht mit einer über die Dicke hinweg variierenden Siliziumkonzentration und Verfahren zu deren Herstellung
US7192892B2 (en) * 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US6875693B1 (en) * 2003-03-26 2005-04-05 Lsi Logic Corporation Via and metal line interface capable of reducing the incidence of electro-migration induced voids
US7135369B2 (en) 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US20050070126A1 (en) * 2003-04-21 2005-03-31 Yoshihide Senzaki System and method for forming multi-component dielectric films
TW200506093A (en) * 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US7183186B2 (en) * 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US7049192B2 (en) * 2003-06-24 2006-05-23 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectrics
US7192824B2 (en) * 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
US7618681B2 (en) 2003-10-28 2009-11-17 Asm International N.V. Process for producing bismuth-containing oxide films
US20050233477A1 (en) * 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7091118B1 (en) * 2004-11-16 2006-08-15 Advanced Micro Devices, Inc. Replacement metal gate transistor with metal-rich silicon layer and method for making the same
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
KR20080003387A (ko) * 2005-04-07 2008-01-07 에비자 테크놀로지, 인크. 다중층, 다중성분 높은-k 막들 및 이들의 증착 방법
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7393736B2 (en) * 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
JP2007153701A (ja) * 2005-12-07 2007-06-21 Fujikura Ltd 熱線反射ガラス、成膜装置及び成膜方法
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7582574B2 (en) * 2006-05-30 2009-09-01 Air Products And Chemicals, Inc. Diethylsilane as a silicon source in the deposition of metal silicate films
US7795160B2 (en) * 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
KR20090068179A (ko) * 2007-12-21 2009-06-25 에이에스엠 인터내셔널 엔.브이. 실리콘 이산화물을 포함하는 박막의 제조 방법
JP5899615B2 (ja) * 2010-03-18 2016-04-06 株式会社リコー 絶縁膜の製造方法及び半導体装置の製造方法
KR101393265B1 (ko) 2009-12-25 2014-05-08 가부시키가이샤 리코 전계효과 트랜지스터, 반도체 메모리, 표시 소자, 화상 표시 장치, 및 시스템
CN102383097A (zh) * 2010-09-01 2012-03-21 上海宏力半导体制造有限公司 一种铝硅铜薄膜的制备方法
DE102010053751A1 (de) 2010-10-28 2012-05-03 Oerlikon Trading Ag, Trübbach Molybdänmonoxidschichten und deren Herstellung mittels PVD
CN102691045A (zh) * 2011-03-23 2012-09-26 鸿富锦精密工业(深圳)有限公司 铝或铝合金的壳体及其制造方法
US9396946B2 (en) 2011-06-27 2016-07-19 Cree, Inc. Wet chemistry processes for fabricating a semiconductor device with increased channel mobility
US10619242B2 (en) 2016-12-02 2020-04-14 Asm Ip Holding B.V. Atomic layer deposition of rhenium containing thin films
KR102328782B1 (ko) * 2017-03-06 2021-11-22 한양대학교 산학협력단 아연 및 인듐을 포함하는 산화물 반도체 박막 및 그 제조 방법
CN111492092A (zh) 2017-12-20 2020-08-04 朗姆研究公司 合金原子层沉积中前体的均质混合的系统和方法
TW202204667A (zh) 2020-06-11 2022-02-01 荷蘭商Asm Ip私人控股有限公司 過渡金屬二硫屬化合物薄膜之原子層沉積及蝕刻

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3441453A (en) 1966-12-21 1969-04-29 Texas Instruments Inc Method for making graded composition mixed compound semiconductor materials
JPS4834798A (zh) 1971-09-06 1973-05-22
US5158653A (en) * 1988-09-26 1992-10-27 Lashmore David S Method for production of predetermined concentration graded alloys
US5945167A (en) * 1994-10-27 1999-08-31 Honda Giken Kogyo Kabushiki Kaisha Method of manufacturing composite material
EP0749134B1 (en) 1995-06-16 2002-10-02 AT&T IPM Corp. Dielectric material comprising Ta2O5 doped with TiO2 and devices employing same
CN1074689C (zh) * 1996-04-04 2001-11-14 E·O·帕通电子焊接研究院电子束工艺国际中心 基体上制备有跨厚度化学组成和结构梯度并陶瓷外层方法
US5882410A (en) 1996-10-01 1999-03-16 Mitsubishi Denki Kabushiki Kaisha High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
US5923056A (en) 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US6296771B1 (en) * 1999-04-02 2001-10-02 Symyx Technologies, Inc. Parallel high-performance liquid chromatography with serial injection
US6403745B1 (en) * 1999-11-30 2002-06-11 Rohmax Additives Gmbh Gradient copolymers, as well as a method for their preparation and their use

Also Published As

Publication number Publication date
JP3588334B2 (ja) 2004-11-10
HK1039967A1 (en) 2002-05-17
EP1146140B1 (en) 2007-03-28
EP1146140A1 (en) 2001-10-17
US6537613B1 (en) 2003-03-25
TWI242055B (en) 2005-10-21
KR100418461B1 (ko) 2004-02-14
KR20010090776A (ko) 2001-10-19
JP2002033317A (ja) 2002-01-31
DE60127486D1 (de) 2007-05-10
DE60127486T2 (de) 2007-12-13
ATE358191T1 (de) 2007-04-15

Similar Documents

Publication Publication Date Title
HK1039967A1 (en) Process for deposition of oxides and nitrides withcompositional gradients
WO2000016377A3 (en) Method for forming a three-component nitride film containing metal and silicon
WO2001080287A3 (en) Process for fabricating thin film transistors
WO2003030224A3 (en) Barrier formation using novel sputter-deposition method
WO2003080887A3 (en) Methods and apparatus for annealing in physical vapor deposition systems
EP0776037A3 (en) Low temperature integrated metallization process and apparatus
DE69801987D1 (de) Suszeptor ausführungen für siliziumkarbid-dünnschichten
EP1065705A3 (en) Group III nitride compound semiconductor device and producing method therefore
CA1078972A (en) Method of making a masking layer
EP1418252A3 (en) Multiphase thermal barrier coatings for very high temperature applications
TW348272B (en) Method and apparatus for depositing planar and highly oriented layers
WO2002083596A1 (fr) Article ceramique assemble, structure de maintien de substrat et appareil permettant de traiter les substrats
WO2005087983A3 (en) Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
EP1070562A4 (en) SINTERED DIAMOND TOOL AND METHOD FOR THE PRODUCTION THEREOF
WO2004093163A3 (en) Method and apparatus for silicone oxide deposition on large area substrates
WO2001039257A3 (fr) Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
JPS57158370A (en) Formation of metallic thin film
Fischer et al. Fiber coatings derived from molecular precursors
JPS6396912A (ja) 基板ホルダ−
EP0834914A3 (en) Electronic coatings
WO2002045147A3 (en) Method for pretreating dielectric layers to enhance the adhesion of cvd metal layers thereto
EP0193298A3 (en) Method for the formation of epitaxial layers for integrated circuits
EP0798771A3 (en) Silicon wafer comprising an amorphous silicon layer and method of manufacturing the same by plasma enhanced chemical vapor deposition (PECVD)
WO2001042766A3 (de) Verfahren und herstellung eines sensors
TW371365B (en) Isolation method of semiconductor device using second pad oxide layer formed through chemical vapor deposition (CVD)

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20110404