HK1039967B - 以組成梯度沉積氧化物和氮化物的方法 - Google Patents
以組成梯度沉積氧化物和氮化物的方法Info
- Publication number
- HK1039967B HK1039967B HK02101201.1A HK02101201A HK1039967B HK 1039967 B HK1039967 B HK 1039967B HK 02101201 A HK02101201 A HK 02101201A HK 1039967 B HK1039967 B HK 1039967B
- Authority
- HK
- Hong Kong
- Prior art keywords
- metalloid
- metal
- deposition
- result
- precursors
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/029—Graded interfaces
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Saccharide Compounds (AREA)
- Ceramic Products (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/546,867 US6537613B1 (en) | 2000-04-10 | 2000-04-10 | Process for metal metalloid oxides and nitrides with compositional gradients |
Publications (2)
Publication Number | Publication Date |
---|---|
HK1039967A1 HK1039967A1 (en) | 2002-05-17 |
HK1039967B true HK1039967B (zh) | 2007-09-14 |
Family
ID=24182359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK02101201.1A HK1039967B (zh) | 2000-04-10 | 2002-02-19 | 以組成梯度沉積氧化物和氮化物的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6537613B1 (zh) |
EP (1) | EP1146140B1 (zh) |
JP (1) | JP3588334B2 (zh) |
KR (1) | KR100418461B1 (zh) |
AT (1) | ATE358191T1 (zh) |
DE (1) | DE60127486T2 (zh) |
HK (1) | HK1039967B (zh) |
TW (1) | TWI242055B (zh) |
Families Citing this family (68)
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US6849334B2 (en) | 2001-08-17 | 2005-02-01 | Neophotonics Corporation | Optical materials and optical devices |
US7554829B2 (en) | 1999-07-30 | 2009-06-30 | Micron Technology, Inc. | Transmission lines for CMOS integrated circuits |
FI118804B (fi) * | 1999-12-03 | 2008-03-31 | Asm Int | Menetelmä oksidikalvojen kasvattamiseksi |
FI117979B (fi) * | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
EP1772534A3 (en) | 2000-09-28 | 2007-04-25 | The President and Fellows of Harvard College | Tungsten-containing and hafnium-containing precursors for vapor deposition |
US6852167B2 (en) * | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
EP1256638B1 (en) * | 2001-05-07 | 2008-03-26 | Samsung Electronics Co., Ltd. | Method of forming a multi-components thin film |
US6391803B1 (en) * | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
US8026161B2 (en) | 2001-08-30 | 2011-09-27 | Micron Technology, Inc. | Highly reliable amorphous high-K gate oxide ZrO2 |
JP2003124460A (ja) * | 2001-10-15 | 2003-04-25 | Atsushi Ogura | ゲート酸化膜、素子、ゲート酸化膜形成方法、ゲート酸化膜形成材料 |
US6900122B2 (en) * | 2001-12-20 | 2005-05-31 | Micron Technology, Inc. | Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics |
US6767795B2 (en) * | 2002-01-17 | 2004-07-27 | Micron Technology, Inc. | Highly reliable amorphous high-k gate dielectric ZrOXNY |
US6893984B2 (en) * | 2002-02-20 | 2005-05-17 | Micron Technology Inc. | Evaporated LaA1O3 films for gate dielectrics |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US7045430B2 (en) * | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
US7135421B2 (en) * | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
US7205218B2 (en) * | 2002-06-05 | 2007-04-17 | Micron Technology, Inc. | Method including forming gate dielectrics having multiple lanthanide oxide layers |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
WO2004010469A2 (en) * | 2002-07-18 | 2004-01-29 | Aviza Technology, Inc. | Atomic layer deposition of multi-metallic precursors |
US6921702B2 (en) * | 2002-07-30 | 2005-07-26 | Micron Technology Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
US6790791B2 (en) * | 2002-08-15 | 2004-09-14 | Micron Technology, Inc. | Lanthanide doped TiOx dielectric films |
JP2004079753A (ja) * | 2002-08-16 | 2004-03-11 | Tokyo Electron Ltd | 半導体装置の製造方法 |
TW200408015A (en) * | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high K metal silicates |
US7199023B2 (en) * | 2002-08-28 | 2007-04-03 | Micron Technology, Inc. | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed |
US7084078B2 (en) * | 2002-08-29 | 2006-08-01 | Micron Technology, Inc. | Atomic layer deposited lanthanide doped TiOx dielectric films |
US6958302B2 (en) | 2002-12-04 | 2005-10-25 | Micron Technology, Inc. | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 |
US7101813B2 (en) | 2002-12-04 | 2006-09-05 | Micron Technology Inc. | Atomic layer deposited Zr-Sn-Ti-O films |
DE10303925B4 (de) | 2003-01-31 | 2007-06-06 | Advanced Micro Devices, Inc., Sunnyvale | Dielektrische Barrierenschicht für eine Kupfermetallisierungsschicht mit einer über die Dicke hinweg variierenden Siliziumkonzentration und Verfahren zu deren Herstellung |
US7192892B2 (en) * | 2003-03-04 | 2007-03-20 | Micron Technology, Inc. | Atomic layer deposited dielectric layers |
US6875693B1 (en) * | 2003-03-26 | 2005-04-05 | Lsi Logic Corporation | Via and metal line interface capable of reducing the incidence of electro-migration induced voids |
US7135369B2 (en) | 2003-03-31 | 2006-11-14 | Micron Technology, Inc. | Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9 |
US20050070126A1 (en) * | 2003-04-21 | 2005-03-31 | Yoshihide Senzaki | System and method for forming multi-component dielectric films |
TW200506093A (en) * | 2003-04-21 | 2005-02-16 | Aviza Tech Inc | System and method for forming multi-component films |
US7183186B2 (en) * | 2003-04-22 | 2007-02-27 | Micro Technology, Inc. | Atomic layer deposited ZrTiO4 films |
US7049192B2 (en) * | 2003-06-24 | 2006-05-23 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectrics |
US7192824B2 (en) * | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
US7220665B2 (en) * | 2003-08-05 | 2007-05-22 | Micron Technology, Inc. | H2 plasma treatment |
US7618681B2 (en) | 2003-10-28 | 2009-11-17 | Asm International N.V. | Process for producing bismuth-containing oxide films |
US20050233477A1 (en) * | 2004-03-05 | 2005-10-20 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and program for implementing the method |
US7081421B2 (en) | 2004-08-26 | 2006-07-25 | Micron Technology, Inc. | Lanthanide oxide dielectric layer |
US7588988B2 (en) | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
US7494939B2 (en) | 2004-08-31 | 2009-02-24 | Micron Technology, Inc. | Methods for forming a lanthanum-metal oxide dielectric layer |
US7091118B1 (en) * | 2004-11-16 | 2006-08-15 | Advanced Micro Devices, Inc. | Replacement metal gate transistor with metal-rich silicon layer and method for making the same |
US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US7687409B2 (en) | 2005-03-29 | 2010-03-30 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
KR20080003387A (ko) * | 2005-04-07 | 2008-01-07 | 에비자 테크놀로지, 인크. | 다중층, 다중성분 높은-k 막들 및 이들의 증착 방법 |
US7662729B2 (en) | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
US7572695B2 (en) | 2005-05-27 | 2009-08-11 | Micron Technology, Inc. | Hafnium titanium oxide films |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7393736B2 (en) * | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
US8110469B2 (en) | 2005-08-30 | 2012-02-07 | Micron Technology, Inc. | Graded dielectric layers |
US20070054048A1 (en) * | 2005-09-07 | 2007-03-08 | Suvi Haukka | Extended deposition range by hot spots |
JP2007153701A (ja) * | 2005-12-07 | 2007-06-21 | Fujikura Ltd | 熱線反射ガラス、成膜装置及び成膜方法 |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7582574B2 (en) * | 2006-05-30 | 2009-09-01 | Air Products And Chemicals, Inc. | Diethylsilane as a silicon source in the deposition of metal silicate films |
US7795160B2 (en) * | 2006-07-21 | 2010-09-14 | Asm America Inc. | ALD of metal silicate films |
US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
KR20090068179A (ko) * | 2007-12-21 | 2009-06-25 | 에이에스엠 인터내셔널 엔.브이. | 실리콘 이산화물을 포함하는 박막의 제조 방법 |
JP5899615B2 (ja) * | 2010-03-18 | 2016-04-06 | 株式会社リコー | 絶縁膜の製造方法及び半導体装置の製造方法 |
KR101393265B1 (ko) | 2009-12-25 | 2014-05-08 | 가부시키가이샤 리코 | 전계효과 트랜지스터, 반도체 메모리, 표시 소자, 화상 표시 장치, 및 시스템 |
CN102383097A (zh) * | 2010-09-01 | 2012-03-21 | 上海宏力半导体制造有限公司 | 一种铝硅铜薄膜的制备方法 |
DE102010053751A1 (de) | 2010-10-28 | 2012-05-03 | Oerlikon Trading Ag, Trübbach | Molybdänmonoxidschichten und deren Herstellung mittels PVD |
CN102691045A (zh) * | 2011-03-23 | 2012-09-26 | 鸿富锦精密工业(深圳)有限公司 | 铝或铝合金的壳体及其制造方法 |
US9396946B2 (en) | 2011-06-27 | 2016-07-19 | Cree, Inc. | Wet chemistry processes for fabricating a semiconductor device with increased channel mobility |
US10619242B2 (en) | 2016-12-02 | 2020-04-14 | Asm Ip Holding B.V. | Atomic layer deposition of rhenium containing thin films |
KR102328782B1 (ko) * | 2017-03-06 | 2021-11-22 | 한양대학교 산학협력단 | 아연 및 인듐을 포함하는 산화물 반도체 박막 및 그 제조 방법 |
CN111492092A (zh) | 2017-12-20 | 2020-08-04 | 朗姆研究公司 | 合金原子层沉积中前体的均质混合的系统和方法 |
TW202204667A (zh) | 2020-06-11 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬二硫屬化合物薄膜之原子層沉積及蝕刻 |
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US3441453A (en) | 1966-12-21 | 1969-04-29 | Texas Instruments Inc | Method for making graded composition mixed compound semiconductor materials |
JPS4834798A (zh) | 1971-09-06 | 1973-05-22 | ||
US5158653A (en) * | 1988-09-26 | 1992-10-27 | Lashmore David S | Method for production of predetermined concentration graded alloys |
US5945167A (en) * | 1994-10-27 | 1999-08-31 | Honda Giken Kogyo Kabushiki Kaisha | Method of manufacturing composite material |
EP0749134B1 (en) | 1995-06-16 | 2002-10-02 | AT&T IPM Corp. | Dielectric material comprising Ta2O5 doped with TiO2 and devices employing same |
CN1074689C (zh) * | 1996-04-04 | 2001-11-14 | E·O·帕通电子焊接研究院电子束工艺国际中心 | 基体上制备有跨厚度化学组成和结构梯度并陶瓷外层方法 |
US5882410A (en) | 1996-10-01 | 1999-03-16 | Mitsubishi Denki Kabushiki Kaisha | High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film |
US5923056A (en) | 1996-10-10 | 1999-07-13 | Lucent Technologies Inc. | Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials |
US6296771B1 (en) * | 1999-04-02 | 2001-10-02 | Symyx Technologies, Inc. | Parallel high-performance liquid chromatography with serial injection |
US6403745B1 (en) * | 1999-11-30 | 2002-06-11 | Rohmax Additives Gmbh | Gradient copolymers, as well as a method for their preparation and their use |
-
2000
- 2000-04-10 US US09/546,867 patent/US6537613B1/en not_active Expired - Fee Related
-
2001
- 2001-04-04 DE DE60127486T patent/DE60127486T2/de not_active Expired - Fee Related
- 2001-04-04 AT AT01107778T patent/ATE358191T1/de not_active IP Right Cessation
- 2001-04-04 EP EP01107778A patent/EP1146140B1/en not_active Expired - Lifetime
- 2001-04-04 TW TW090108200A patent/TWI242055B/zh not_active IP Right Cessation
- 2001-04-09 KR KR10-2001-0018573A patent/KR100418461B1/ko not_active IP Right Cessation
- 2001-04-10 JP JP2001111503A patent/JP3588334B2/ja not_active Expired - Fee Related
-
2002
- 2002-02-19 HK HK02101201.1A patent/HK1039967B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3588334B2 (ja) | 2004-11-10 |
HK1039967A1 (en) | 2002-05-17 |
EP1146140B1 (en) | 2007-03-28 |
EP1146140A1 (en) | 2001-10-17 |
US6537613B1 (en) | 2003-03-25 |
TWI242055B (en) | 2005-10-21 |
KR100418461B1 (ko) | 2004-02-14 |
KR20010090776A (ko) | 2001-10-19 |
JP2002033317A (ja) | 2002-01-31 |
DE60127486D1 (de) | 2007-05-10 |
DE60127486T2 (de) | 2007-12-13 |
ATE358191T1 (de) | 2007-04-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20110404 |