JPS57188853A - Plastic molded type semiconductor device - Google Patents

Plastic molded type semiconductor device

Info

Publication number
JPS57188853A
JPS57188853A JP56075291A JP7529181A JPS57188853A JP S57188853 A JPS57188853 A JP S57188853A JP 56075291 A JP56075291 A JP 56075291A JP 7529181 A JP7529181 A JP 7529181A JP S57188853 A JPS57188853 A JP S57188853A
Authority
JP
Japan
Prior art keywords
semiconductor element
film
semiconductor device
semiconductor
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56075291A
Other languages
Japanese (ja)
Other versions
JPS628035B2 (en
Inventor
Koji Fujisaki
Shunichi Numata
Akio Nishikawa
Hiroshi Suzuki
Takeshi Komaru
Daisuke Makino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Hitachi Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP56075291A priority Critical patent/JPS57188853A/en
Priority to DE3126361A priority patent/DE3126361C2/en
Priority to GB8120607A priority patent/GB2098800B/en
Publication of JPS57188853A publication Critical patent/JPS57188853A/en
Publication of JPS628035B2 publication Critical patent/JPS628035B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Paints Or Removers (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

PURPOSE: To improve moisture resistance by a device wherein the surface of a semiconductor element is coated with an organic high molecular film having the given moisture permeable factor.
CONSTITUTION: An organic high molecular film 6 (such as polyimide resin which is obtained by reacting aromatic diamine and aromatic tetracarbonic acid 2-anhydride at the ratio of equal mol) having a moisture permeable factor no larger than 1×10-7g.cm/cm2.h is coated directly or through an insulative film on the surface of a semiconductor element 1. Then, the semiconductor element is molded using sealing plastic 8. By so doing, the given polyimide film can by applied on the semiconductor surface or a PSG protection layer of CVD method, thus improving moisture resistance of semiconductor devices.
COPYRIGHT: (C)1982,JPO&Japio
JP56075291A 1981-05-18 1981-05-18 Plastic molded type semiconductor device Granted JPS57188853A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56075291A JPS57188853A (en) 1981-05-18 1981-05-18 Plastic molded type semiconductor device
DE3126361A DE3126361C2 (en) 1981-05-18 1981-07-03 Protective layer for semiconductor elements
GB8120607A GB2098800B (en) 1981-05-18 1981-07-03 Resin encapsulated semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075291A JPS57188853A (en) 1981-05-18 1981-05-18 Plastic molded type semiconductor device

Publications (2)

Publication Number Publication Date
JPS57188853A true JPS57188853A (en) 1982-11-19
JPS628035B2 JPS628035B2 (en) 1987-02-20

Family

ID=13571981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56075291A Granted JPS57188853A (en) 1981-05-18 1981-05-18 Plastic molded type semiconductor device

Country Status (3)

Country Link
JP (1) JPS57188853A (en)
DE (1) DE3126361C2 (en)
GB (1) GB2098800B (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60208358A (en) * 1984-04-02 1985-10-19 Hitachi Ltd Composite
JPS60221426A (en) * 1984-04-17 1985-11-06 Hitachi Chem Co Ltd Production of polyimide composite
JPS60243120A (en) * 1984-05-18 1985-12-03 Hitachi Ltd Flexible printed base board and production thereof
JPS60245150A (en) * 1984-05-21 1985-12-04 Hitachi Ltd Semiconductor device
JPH01181430A (en) * 1988-01-08 1989-07-19 Nissan Chem Ind Ltd Insulating film for electric and electronic device
US5272247A (en) * 1990-10-19 1993-12-21 Hitachi, Ltd. Polyimide precursor, cured product thereof, and processes for producing them
US5536584A (en) * 1992-01-31 1996-07-16 Hitachi, Ltd. Polyimide precursor, polyimide and metalization structure using said polyimide
JP2012164937A (en) * 2011-02-09 2012-08-30 Fujitsu Ltd Semiconductor device, manufacturing method of the same and power supply device
CN105254886A (en) * 2015-11-02 2016-01-20 株洲时代新材料科技股份有限公司 Polyamide acid resin composition and thermoplastic polyimide thin film as well as preparation methods thereof

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012744A (en) * 1983-07-01 1985-01-23 Hitachi Ltd Semiconductor device
JPS60238817A (en) * 1984-05-12 1985-11-27 Citizen Watch Co Ltd Liquid crystal display device
JPH01110559A (en) * 1987-10-23 1989-04-27 Hitachi Chem Co Ltd Composition of protective film for semiconductor element
US5276414A (en) * 1991-12-10 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Moistureproof structure for module circuits
JPH05198786A (en) * 1992-01-22 1993-08-06 Sharp Corp Clear-mold ccd solid-state image pickup element
DE19741437A1 (en) * 1997-09-19 1999-04-01 Siemens Ag Electronic component with improved housing molding compound
JP2003531487A (en) 2000-04-18 2003-10-21 イー−インク コーポレイション Process for manufacturing thin film transistor
US7893435B2 (en) 2000-04-18 2011-02-22 E Ink Corporation Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough
CN116478400A (en) * 2023-02-06 2023-07-25 中山大学 Polyimide and diamine monomer containing tetrabiphenyl derivative structure and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506279A (en) * 1973-05-18 1975-01-22

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5176078A (en) * 1974-12-23 1976-07-01 Hitachi Ltd Handaboshokumakuo hodokoshita handotaisochi
JPS5568659A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Semiconductor device and manufacturing method thereof
JPS55156343A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506279A (en) * 1973-05-18 1975-01-22

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60208358A (en) * 1984-04-02 1985-10-19 Hitachi Ltd Composite
JPS60221426A (en) * 1984-04-17 1985-11-06 Hitachi Chem Co Ltd Production of polyimide composite
JPS60243120A (en) * 1984-05-18 1985-12-03 Hitachi Ltd Flexible printed base board and production thereof
JPH0354971B2 (en) * 1984-05-18 1991-08-21
JPS60245150A (en) * 1984-05-21 1985-12-04 Hitachi Ltd Semiconductor device
JPH01181430A (en) * 1988-01-08 1989-07-19 Nissan Chem Ind Ltd Insulating film for electric and electronic device
US5272247A (en) * 1990-10-19 1993-12-21 Hitachi, Ltd. Polyimide precursor, cured product thereof, and processes for producing them
US5536584A (en) * 1992-01-31 1996-07-16 Hitachi, Ltd. Polyimide precursor, polyimide and metalization structure using said polyimide
JP2012164937A (en) * 2011-02-09 2012-08-30 Fujitsu Ltd Semiconductor device, manufacturing method of the same and power supply device
CN105254886A (en) * 2015-11-02 2016-01-20 株洲时代新材料科技股份有限公司 Polyamide acid resin composition and thermoplastic polyimide thin film as well as preparation methods thereof

Also Published As

Publication number Publication date
GB2098800B (en) 1986-03-26
DE3126361C2 (en) 1986-12-04
DE3126361A1 (en) 1982-11-25
GB2098800A (en) 1982-11-24
JPS628035B2 (en) 1987-02-20

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