JPS52106679A - Manufacturing method of semioconductor device - Google Patents

Manufacturing method of semioconductor device

Info

Publication number
JPS52106679A
JPS52106679A JP2331876A JP2331876A JPS52106679A JP S52106679 A JPS52106679 A JP S52106679A JP 2331876 A JP2331876 A JP 2331876A JP 2331876 A JP2331876 A JP 2331876A JP S52106679 A JPS52106679 A JP S52106679A
Authority
JP
Japan
Prior art keywords
manufacturing
semioconductor
film
coupling agent
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2331876A
Other languages
Japanese (ja)
Other versions
JPS557009B2 (en
Inventor
Ichisuke Yamanaka
Shigeru Takahashi
Atsushi Saiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2331876A priority Critical patent/JPS52106679A/en
Publication of JPS52106679A publication Critical patent/JPS52106679A/en
Publication of JPS557009B2 publication Critical patent/JPS557009B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To provide a manufacturing methods to improve adhesion feature between a thermostable high polymer resin and an insulation film by making the film thin and even heating it at an appropriate temperature, which is formed from cyan coupling agent on such a insulating film as non organic oxide and the like.
COPYRIGHT: (C)1977,JPO&Japio
JP2331876A 1976-03-05 1976-03-05 Manufacturing method of semioconductor device Granted JPS52106679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2331876A JPS52106679A (en) 1976-03-05 1976-03-05 Manufacturing method of semioconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2331876A JPS52106679A (en) 1976-03-05 1976-03-05 Manufacturing method of semioconductor device

Publications (2)

Publication Number Publication Date
JPS52106679A true JPS52106679A (en) 1977-09-07
JPS557009B2 JPS557009B2 (en) 1980-02-21

Family

ID=12107226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2331876A Granted JPS52106679A (en) 1976-03-05 1976-03-05 Manufacturing method of semioconductor device

Country Status (1)

Country Link
JP (1) JPS52106679A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617024A (en) * 1979-07-20 1981-02-18 Fujitsu Ltd Semiconductor device
JPH03120821A (en) * 1989-09-29 1991-05-23 American Teleph & Telegr Co <Att> Method of manufacturing integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940077A (en) * 1972-08-18 1974-04-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940077A (en) * 1972-08-18 1974-04-15

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617024A (en) * 1979-07-20 1981-02-18 Fujitsu Ltd Semiconductor device
JPH03120821A (en) * 1989-09-29 1991-05-23 American Teleph & Telegr Co <Att> Method of manufacturing integrated circuit device

Also Published As

Publication number Publication date
JPS557009B2 (en) 1980-02-21

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