JPS5617024A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5617024A JPS5617024A JP9226379A JP9226379A JPS5617024A JP S5617024 A JPS5617024 A JP S5617024A JP 9226379 A JP9226379 A JP 9226379A JP 9226379 A JP9226379 A JP 9226379A JP S5617024 A JPS5617024 A JP S5617024A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- semiconductor device
- polyimide layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000004642 Polyimide Substances 0.000 abstract 3
- 229920001721 polyimide Polymers 0.000 abstract 3
- 239000004698 Polyethylene Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- -1 polyethylene Polymers 0.000 abstract 2
- 229920000573 polyethylene Polymers 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 abstract 1
- 239000005977 Ethylene Substances 0.000 abstract 1
- 230000002411 adverse Effects 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005470 impregnation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000178 monomer Substances 0.000 abstract 1
- 229920000620 organic polymer Polymers 0.000 abstract 1
- 238000009832 plasma treatment Methods 0.000 abstract 1
- 230000000379 polymerizing effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To obtain a high reliable protecting film in a semiconductor device by complementing the disadvantage of a polyimide layer by using two layer film of a polyimide layer and an organic polymer layer. CONSTITUTION:An aluminum wire 3 is formed on an SiO2 film 2 on an Si substrate 1. Then, a polyimide layer 4 is coated thereon, and a polyethylene film 5 polymerized with organic monomer such as ethylene or the like by a plasma polymerizing process is superimposed thereon. This plasma treatment can be executed at relatively lower temperature to effect no adverse affect to the element formed on the substrate 1. Na contamination and moisture impregnation can be positively prevented in the presence of a polyethylene layer 5 to obtain a high reliable protecting semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9226379A JPS5617024A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9226379A JPS5617024A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5617024A true JPS5617024A (en) | 1981-02-18 |
Family
ID=14049511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9226379A Pending JPS5617024A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617024A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4339526A (en) * | 1981-06-24 | 1982-07-13 | International Business Machines Corporation | Acetylene terminated, branched polyphenylene resist and protective coating for integrated circuit devices |
| JPH04142456A (en) * | 1990-10-02 | 1992-05-15 | Sumitomo Metal Ind Ltd | Ultrasonic flaw detection for metal tube |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106679A (en) * | 1976-03-05 | 1977-09-07 | Hitachi Ltd | Manufacturing method of semioconductor device |
| JPS53101979A (en) * | 1977-02-17 | 1978-09-05 | Fujitsu Ltd | Semiconductor device |
-
1979
- 1979-07-20 JP JP9226379A patent/JPS5617024A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106679A (en) * | 1976-03-05 | 1977-09-07 | Hitachi Ltd | Manufacturing method of semioconductor device |
| JPS53101979A (en) * | 1977-02-17 | 1978-09-05 | Fujitsu Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4339526A (en) * | 1981-06-24 | 1982-07-13 | International Business Machines Corporation | Acetylene terminated, branched polyphenylene resist and protective coating for integrated circuit devices |
| JPH04142456A (en) * | 1990-10-02 | 1992-05-15 | Sumitomo Metal Ind Ltd | Ultrasonic flaw detection for metal tube |
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