JPS55154751A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55154751A
JPS55154751A JP6283179A JP6283179A JPS55154751A JP S55154751 A JPS55154751 A JP S55154751A JP 6283179 A JP6283179 A JP 6283179A JP 6283179 A JP6283179 A JP 6283179A JP S55154751 A JPS55154751 A JP S55154751A
Authority
JP
Japan
Prior art keywords
film
approx
liquid composition
aluminum wire
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6283179A
Other languages
Japanese (ja)
Other versions
JPS6143850B2 (en
Inventor
Toshio Kurahashi
Toshihiko Ono
Ichiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6283179A priority Critical patent/JPS55154751A/en
Publication of JPS55154751A publication Critical patent/JPS55154751A/en
Publication of JPS6143850B2 publication Critical patent/JPS6143850B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form a preferable protecting film in a semiconductor device by coating liquid composition containing organic high molecular compound and glass forming organic compound on an aluminum wire on an Si substrate and then heating to cure it. CONSTITUTION:4-8% of dimethyl acetamide, 16-40% of methyl silicate and 16-12% of ethyl alcohol are mixed as diluents by volume ration with 40-80% of polyimide resin. At this time the volume ratio is adjusted in response to desired viscosity. This liquid composition is uniformly coated on an Si substrate formed with aluminum wire thereon by a rotary coating process. When it is treated at approx. 480 deg.C for approx. 30min and cured, the protecting film thus obtained has no crack and preferably adheres an SiO2 film in the gap between the wires, said film incorporating waterproofness, radiation resistance and particularly alpha ray resistance as excellent shielding effect.
JP6283179A 1979-05-22 1979-05-22 Manufacture of semiconductor device Granted JPS55154751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6283179A JPS55154751A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6283179A JPS55154751A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55154751A true JPS55154751A (en) 1980-12-02
JPS6143850B2 JPS6143850B2 (en) 1986-09-30

Family

ID=13211651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6283179A Granted JPS55154751A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55154751A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211243A (en) * 1981-06-23 1982-12-25 Nec Corp Manufacture of semiconductor device
JPS60246652A (en) * 1984-05-22 1985-12-06 Nec Corp Formation of flattened conductor wiring

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940077A (en) * 1972-08-18 1974-04-15
JPS53140973A (en) * 1977-05-13 1978-12-08 Sanyo Electric Co Ltd Forming method of semiconductor insulation film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940077A (en) * 1972-08-18 1974-04-15
JPS53140973A (en) * 1977-05-13 1978-12-08 Sanyo Electric Co Ltd Forming method of semiconductor insulation film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211243A (en) * 1981-06-23 1982-12-25 Nec Corp Manufacture of semiconductor device
JPS6231823B2 (en) * 1981-06-23 1987-07-10 Nippon Electric Co
JPS60246652A (en) * 1984-05-22 1985-12-06 Nec Corp Formation of flattened conductor wiring
JPH0326540B2 (en) * 1984-05-22 1991-04-11 Nippon Electric Co

Also Published As

Publication number Publication date
JPS6143850B2 (en) 1986-09-30

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