JPS55154751A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55154751A JPS55154751A JP6283179A JP6283179A JPS55154751A JP S55154751 A JPS55154751 A JP S55154751A JP 6283179 A JP6283179 A JP 6283179A JP 6283179 A JP6283179 A JP 6283179A JP S55154751 A JPS55154751 A JP S55154751A
- Authority
- JP
- Japan
- Prior art keywords
- film
- approx
- liquid composition
- aluminum wire
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form a preferable protecting film in a semiconductor device by coating liquid composition containing organic high molecular compound and glass forming organic compound on an aluminum wire on an Si substrate and then heating to cure it. CONSTITUTION:4-8% of dimethyl acetamide, 16-40% of methyl silicate and 16-12% of ethyl alcohol are mixed as diluents by volume ration with 40-80% of polyimide resin. At this time the volume ratio is adjusted in response to desired viscosity. This liquid composition is uniformly coated on an Si substrate formed with aluminum wire thereon by a rotary coating process. When it is treated at approx. 480 deg.C for approx. 30min and cured, the protecting film thus obtained has no crack and preferably adheres an SiO2 film in the gap between the wires, said film incorporating waterproofness, radiation resistance and particularly alpha ray resistance as excellent shielding effect.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6283179A JPS55154751A (en) | 1979-05-22 | 1979-05-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6283179A JPS55154751A (en) | 1979-05-22 | 1979-05-22 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55154751A true JPS55154751A (en) | 1980-12-02 |
JPS6143850B2 JPS6143850B2 (en) | 1986-09-30 |
Family
ID=13211651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6283179A Granted JPS55154751A (en) | 1979-05-22 | 1979-05-22 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55154751A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211243A (en) * | 1981-06-23 | 1982-12-25 | Nec Corp | Manufacture of semiconductor device |
JPS60246652A (en) * | 1984-05-22 | 1985-12-06 | Nec Corp | Formation of flattened conductor wiring |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4940077A (en) * | 1972-08-18 | 1974-04-15 | ||
JPS53140973A (en) * | 1977-05-13 | 1978-12-08 | Sanyo Electric Co Ltd | Forming method of semiconductor insulation film |
-
1979
- 1979-05-22 JP JP6283179A patent/JPS55154751A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4940077A (en) * | 1972-08-18 | 1974-04-15 | ||
JPS53140973A (en) * | 1977-05-13 | 1978-12-08 | Sanyo Electric Co Ltd | Forming method of semiconductor insulation film |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211243A (en) * | 1981-06-23 | 1982-12-25 | Nec Corp | Manufacture of semiconductor device |
JPS6231823B2 (en) * | 1981-06-23 | 1987-07-10 | Nippon Electric Co | |
JPS60246652A (en) * | 1984-05-22 | 1985-12-06 | Nec Corp | Formation of flattened conductor wiring |
JPH0326540B2 (en) * | 1984-05-22 | 1991-04-11 | Nippon Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS6143850B2 (en) | 1986-09-30 |
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