JPS60245150A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain shield against alpha-ray, preferable heat resistance and etching workability by coating an active region on a semiconductor element with a polyimide protective film having much smaller thermal expansion coefficient as compared with general polymer. CONSTITUTION:After a semiconductor element 2 is mounted on a ceramic package 3 and wire bonded, an alpha-ray shielding film 1 is coated on the surface of the element 2, and sealed with a metal plate 5. Polyimide having linear thermal expansion coefficient of 3.0X10<-5>K<-1> or less is used for the film 1. Thus, a shield can be formed against alpha-ray. Since the used polyimide has excellent heat resistance and moisture resistance with low thermal expansion coefficient, a semiconductor device coated protectively by the resin material has excellent heat shock resistance, less damage and high reliability.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a highly reliable semiconductor device protected by a low thermal expansion polymer film.

[Background of the invention]

(4) Recently, as semiconductor devices, particularly memory devices, have become highly integrated and densely packed, errors caused by radioactive substances that exist in trace amounts in nature have become a problem. A particular problem is alpha rays from packaging materials. Semiconductor devices are typically used packaged with ceramics or resin materials such as epoxy resin. The main raw material for this ceramic is natural alumina, and the epoxy sealing resin also contains fillers such as natural silica and alumina in order to bring the coefficient of thermal expansion closer to that of semiconductor elements.
0 to 80 weight), it is necessary to shield alpha rays from these. As a countermeasure against this error difference due to alpha rays, so-called soft error, high-purity packaging materials are used. Alternatively, two methods of coating with a high-purity protective film can be considered. In the former case, it is difficult to obtain high purity ceramics and fillers, resulting in extremely high costs. The latter is relatively low cost, as it is only necessary to form a high purity polymer film with a thickness of 40 pm or more.
) Industrially useful. So far, silicone rubber and polyimide have been known to be useful.

However, as mentioned above about shielding alpha rays,
Problems arise due to this formation.

First, in the case of a ceramic package, high heat resistance is required because it is heated to a temperature higher than the melting point of the sealing glass (420 to 480° C.) during sealing.

If the heat resistance is poor, the gas generated from the α-ray shielding film will cause holes in the sealing glass, resulting in poor sealing. In this respect, 7-liconine rubber cannot be used. Polyimide is excellent in this respect, but when the amount of coating increases as the number of devices increases, even ordinary polyimide is not sufficient. Furthermore, polyimide has a problem of high thermal stress. Polyimide generally has a high glass transition temperature and requires high temperatures for curing. Therefore, in the process of cooling to room temperature after curing, large thermal cracking occurs due to the difference in thermal expansion coefficient between the element and the polyimide film. This thermal stress causes problems such as device cracks, cracks in the passivation film (6), deformation of wiring, and variations in device characteristics. Normally, a filler is added to reduce the coefficient of thermal expansion, but in the case of an α-ray shielding film, an α-ray shielding source must be added, which is a practical problem. Recently, in the case of small packages such as chip carriers, as shown in Figure 2 below, in order to reduce the shape and amount of gas generated, the conventional botting coating method has been replaced by coating the entire surface of the wafer at the wafer stage. There is a shift to a so-called Ueno treatment method in which the electrode portion is removed, and etching processability is also required.

Next, in the case of plastic packages, when silicone rubber is used, large distortions occur at the interface between the rubber and the package resin due to the difference in coefficient of thermal expansion.

In the case of silicone rubber, since the above-mentioned Ueno treatment method cannot be adopted, the botting method is used, but in this case, the lead wire is located at the interface and there is a problem that the wire breaks due to the heat cycle.

(7) In addition, in the case of polyimide, there is a problem of thermal stress as in the case of ceramic sealing, and there is also a problem of moisture resistance. In other words, polyimide has a much higher moisture absorption rate than silicone rubber or epoxy-based sealing resins, and if it is applied to the entire surface of the element using the botting method, the infiltrated moisture will corrode the aluminum, which is the electrode material, and cause wire breakage. There is also the problem.

[Purpose of the invention]

An object of the present invention is to provide a highly reliable semiconductor device coated with a polyimide protective film that has a much smaller coefficient of thermal expansion than general polymers and has excellent heat resistance and etching processability. It is in.

[Summary of the invention]

To summarize the present invention, the present invention relates to a semiconductor device, in which at least an active region on a semiconductor element includes 3.
Is it protected by a resin material with a linear thermal expansion coefficient of OX 10-"K-" or less? Features. Examples of resin materials with low thermal expansion (8) that can be used in the present invention include the following general formula (1): group (wherein R is the same or different, lower alkyl group, lower alkoxy group, fluorinated lower alkyl group) , fluorinated lower alkoxy group, acyl group or halogen, n represents a number from 0 to 4)
A tetravalent aromatic group shown by ? Examples include polyimides containing chemical structural units represented by the following.

(9) In addition, in order to improve other properties within a permissible range of increase in thermal stress due to increase in thermal expansion coefficient, the following general formula It is also useful to copolymerize or blend a polyimide containing a chemical structural unit represented by [representing a valent organic group].

The low thermal expansion polyimide used in the present invention includes p-phenylenediamine, 2,4-diaminotoluene, 2,4-
Diaminoxylene, diaminodurene, 44-diaminobensitrifluoride, 2,4-diaminoacetophenone, tetrafluoro p-phenylenediamine, benzidine, 43'-dimethylbenzidine, 53'-bis(trifluoromethyl)benzidine, 3.3'- Dimethoxybenzidine, &&'5.5'-tetramethylbenzidine,2,2'-dimethylbenzidine,s,3'-diacetyl (10) benzidine, octafluorobenzidine, 3.3b'5
．． Diamines such as 5'-tetrachlorobenzidine, 4,4'-diaminoterphenyl, 4,4'-diaminoquaterphenyl, or isocyanate compounds thereof and pyromellitic acid, 5.3. '4.4'-benzophenonetetracarboxylic acid,! It is obtained by reaction with 3'4,4'-biphenyltetracarboxylic acid or a reactive derivative thereof. Examples of tetracarboxylic acid reactive derivatives include esterified products, acid anhydrides, and acid chlorides. In terms of synthesis, acid anhydrides are advantageous in terms of reactivity and the like.

The synthesis reaction is almost the same as that for ordinary polyimide; once it is coated at the polyamic acid phase stage, the imidization reaction is carried out at the same time as the solvent is removed by heating. It's good as well. Examples of reaction solvents include N-methylpyrrolidone (NMP), \N-dimethylacetamide (DMAC)
, N,N-dimethylformamide (nuy), dimethyl sulfoxide (DM80), (11) dimethyl sulfate, sulfolane, butyrolactone, cresol, phenol, halogenated phenol, cyclohexanone, tetrahydrofuran, and the like.

The low thermal expansion polyimide can also be modified by introducing other aromatic diamines, aromatic diisocyanates, tetracarboxylic acids, or derivatives thereof within acceptable ranges.

Specific examples include m-phenylenediamine, 4.
4'-diaminodiphenylmethane, 1,2-bis(anilino)ethane, 4,4'-diaminodiphenyl ether, diaminodiphenylsulfone, 2,2-bis(p-aminophenyl)furopane, 2,2-bis(p-amino phenyl) hexafluoropropane, 53'-dimethyl-4,4'-diaminodiphenyl ether,! h, 3'-
Dimethyl-4.4'-diaminodiphenylmethane, 45
-diaminotoluene, 3,5-diaminobencytrifluoride, 1,4-bis(p-aminophenoxy)benzene, 4,4'-bis(p-aminophenoxy)(12
) biphenyl, 2,2-bis(4-(p-aminophenoxy)phenyl)propane, diaminoanthraquinone, 4
．． 4'-bis(3-aminophenodiphenyl)diphenylsulfone, 1,3-bis(anilino)hexafluoropropane, 1,4-bis(anilino)octafluorobutane, 1,5-bis(anilino)decafluorobentane , 1゜7-bis(anilino)tetradecafluoroheptane, general formula % formula % (Rm * "t is a divalent organic group, R4e R1 is a monovalent organic group, p and q are integers larger than 1) Diaminosiloxane shown, 2,2-bis[4-(p-aminophenoxy)phenyl]hexafluoro(13)ropropane, 2.2-bis(4-(3-aminophenoxy)phenyl]hexafluoropropane, 2. 2-bis(4-(2-aminophenoxy)phenyl]hexafluoropropane, 2.2-bis(4-(4-aminophenoxy)-45-dimethylphenyl)hexafluoropropane, 2.2-bis( 4-(4-aminophenoxy)-
[5-ditrifluoromethylphenyl]hexafluoropropane, p-bis(4-amino-2-trifluoromethylphenoxy)benzene, 4,4'-bis(4-7minor-2-)lifluoromethylphenoxy)biphenyl ,
4.4'-bis(4-amino-3-trifluoromethylphenoxy)biphenyl, 4,4'-bis(4-amino-2-trifluoromethylphenoxy)diphenylsulfone, 4.42-bis(3-amino -5-trifluoromethylphenoxy)diphenylsulfone, λ2-bis(
Diamines such as 4-(4-amino-3-trifluoromethylphenoxyc)phenyl]hexafluoropropane, and diisocyanates obtained by reacting these (14) diamines with phosgene, such as tolylene diisocyanate, diphenylmethane diisocyanate, There are aromatic diisocyanates such as naphthalene diisocyanate, diphenyl ether diisocyanate, and phenylene-1,3-diisocyanate. In addition, examples of tetracarboxylic acids and derivatives thereof include the following.

Although the tetracarboxylic acid is exemplified here, its esters, acid anhydrides, and acid chlorides can of course also be used.

2, i 3. '4'-tetracarboxybiphenyl, engineering 1'4.4'-f) Racarpoxydiphenyl ether, 2, A&'4'-tetracarboxydiphenyl ether, 2. Ai'4'-tetracarboxybenzophenone, 2. A&7-tetracarboxynaphthalene, 1,
4. a 7-tetracarboxynaphthalene, 1,2゜6-titracarboxynaphthalene, &&'4.4'
-tetracarboxydiphenylmethane, 2,2-bis(
s, 4-dicarboxyphenyl)furopane, (15
) 2.2-bis(Δ4-dicarboxyphenyl)hexafluoropropane, 3.3. '4.4'-Tetracarboxydiphenylsulfone, &4,9.10-tetracarboxyperylene, 2.2-bis(4-(K4-dicarboxyphenoxy)phenyl)propane, 2.2-bis[
Examples include 4-(!L4-dicarboxyphenoxy)phenyl]hexafluoropropane, butanetetracarboxylic acid, and cyclopentanetetracarboxylic acid.

Among these, when imparting flexibility, aromatic ether-based materials are preferred. Copolymerization of a small amount of silicone diamine significantly improves adhesion. However, since heat resistance also decreases, it is not preferable when heat resistance is required. It is also quite effective in reducing moisture absorption, so it is preferable for plastic packages.

[11-type bolylides that can be used in the present invention are generally easily etched with alkali. In particular, systems using p-phenylenediamine or pyromellitic acid seem to be fast. Etching rate tube (16) To increase the speed, it is more convenient to use a polymer in which the imidization reaction is incomplete. This can be controlled to some extent by the curing temperature.

However, depending on the polymer, the polyimide film may become brittle and cracks may appear on the etched surface due to the infiltration of the etchant. In such cases, it is necessary to advance the imidization reaction to some extent. As an etching agent, N
aOH.

Examples include basic compounds such as KO) I, hydrazine-based compounds, and ammonium-based compounds. The combination of hydrazine hydrate and aliphatic diamines is well known.

First, a crosslinked structure or ladder structure can be introduced by modifying with a compound having a reactive functional group.

For example, there are the following methods.

(1) By modifying with a compound represented by the following general formula [■], a pyrrolone ring, isoindoquinazolinedione ring, etc. are introduced.

(17) [In the formula, R' is a 2 + x-valent aromatic organic group, 2 is NH2
0014 group and 803NB group, and is at the ortho position with respect to the amino group. X
is 1 or 2. ] (iii Modified with derivatives of amines, diamines, dicarboxylic acids, tricarboxylic acids, and tetracarboxylic acids having polymerizable unsaturated bonds to form a cross-linked structure during curing. Examples of unsaturated compounds include maleic acid, nadic acid, , tetrahydroheptalic acid, ethynylaniline, etc. can be used.

(iii) Modify with an aromatic amine having a phenolic hydroxyl group or a carboxylic acid, and form a network structure using a crosslinking agent that can react with the hydroxyl group or carboxyl group.

The coefficient of thermal expansion can be adjusted by modifying each of the above components. That is, the modification component detailed above is included in the general formula [111], and by increasing the content of this structural unit, the thermal properties of the polymer consisting only of the structural units represented by the general formula [11] can be increased. The expansion coefficient can also be increased (18) and can be set arbitrarily depending on the purpose or use.

In the present invention, when a low thermal expansion polyimide is integrated with an inorganic material, adhesiveness is important.

Although a modification method using a silicone diamine has been exemplified as a measure to improve adhesion, the following treatment methods are also preferable. It is preferable to roughen the surface of the inorganic material or to perform surface treatment with a silane coupling agent, a titanate coupling agent, aluminum alcoholate, aluminum chelate, zirconium chelate, aluminum acetylacetone, or the like. These surface treating agents may be added to the low thermal expansion polyimide.

In the present invention, inorganic, organic, or metal powders, fibers, chopped strands, etc. may be mixed in order to further lower the thermal expansion coefficient, increase the elastic modulus, and control fluidity. .

During the manufacture of the semiconductor device of the present invention, a coating with a thickness of approximately (19) must be formed, so a polymer solution with a high viscosity is used, which causes problems in workability. Using high viscosity fen will break up for a long time on leveling. As a solution to this problem, if the object to be coated is pre-wetted with a similar low viscosity phenylene or solvent, the leveling speed will be significantly faster even with high viscosity varnishes.

There is also a moving bed for adding leveling agents such as fluorine-based surfactants.

Production Examples 1 to 10 and Comparative Examples 1 to 4 A fourth flask equipped with a thermometer, a stirring device, a reflux condenser, and an inlet was charged with diamine in the amount shown in Table 1 below, and N-methyl-2- Pyrrolidone (NMP) 8
Dissolved at 50f.

Next, the flask was immersed in a water bath at 0 to 50°C, and tetracarboxylic dianhydride was added while suppressing heat generation.

After the tetracarboxylic dianhydride was dissolved, the water bath was removed, and the reaction was continued for about 5 hours at around room temperature to obtain the polyamic acid cloth shown in Table 1. If the phen viscosity became too high, (20) heating and stirring was performed at 80-85°C until the viscosity at 25°C became 50 poise.

The thermal expansion coefficient of polyimide obtained by heating these polyamic acids was measured as follows.

That is, it is applied uniformly to a glass plate using an applicator, dried at 80 to 100°C for 30 to 60 minutes to form a film, peeled off from the glass plate, fixed on an iron frame, and heated to 200°C.
Hold at 300℃ and 350℃ for 30 minutes each,
A polyimide film with a thickness of ~200 μm was obtained. Koreke 3
■It was cut into 80 g Determined from the amount of dimensional change below the glass transition point. In this manner, the coefficient of thermal expansion cannot be accurately measured unless the hygroscopic moisture of the film, the solvent, and the residual strain caused by the imidization reaction are sufficiently removed, and the imidization reaction is not substantially completed. Due to moisture absorption, the coefficient of thermal expansion of the upper film appears to be (21) smaller due to dehumidification in the range from room temperature to 150°C. Additionally, if the residual strain or imidization reaction is not completed, shrinkage may occur near Tg due to removal of the residual strain or dehydration due to the imidization reaction, and the linear expansion coefficient above may appear to be small. many.

(22) [Embodiments of the Invention] The present invention will be explained in more detail by way of Examples below.
The invention is not limited to these examples.

By the way, is Figure 1 the alpha-ray shielding film of the Botting method? Cross-sectional view of a semiconductor device with ceramics (second cage)
The figure shows a cross-sectional view of a ceramic chip carrier in which alpha ray shielding outside the active region has been removed by etching.
Figure 3 is a cross-sectional view of a memory element in a ceramic package with a botting-type α-ray shielding film, and Figure 4 is an α-ray shielding film in areas other than the active region? FIG. 5 is a cross-sectional view of the memory device in the plastic package from which the memory element has been removed, and FIG. 5 is a cross-sectional view of the plastic chip carrier from which the α-ray shielding film other than the active region has been removed. The code 1 in each figure is an α-ray shielding film;
2 is a semiconductor element, 3 is a ceramic cage, 4 is a lead bottle, 5 is a metal plate, 6 is a low-melting glass for sealing, and 7 is a sealing resin.

Example 1 (24) 254 kl) It D-RAM device was mounted in the ceramic package shown in FIG. 1, wire bonded, and then heated in a 15% toluene solution of aluminum chelate (aluminum monoethyl acetate diisopropylate). After being dropped onto the surface of the device, it was heated in oxygen at 350° C. for 30 minutes. After cooling, the polyamic acid varnish of Production Example 1 was coated to a thickness of 70 μm or more even in thin areas after hardening. The curing conditions are 80'C/30 minutes + (80
→400℃)/3 hours +400℃/10 minutes. It was then sealed with a metal lid to obtain the desired packaged memory device. The soft error occurrence rate of this element was 1000Fit or less. Also, -55 to 160
A heat shock test of 15,000 cycles was conducted at ℃.
None of the 20 middle-aged ones were good. There were no defects even after 1000 hours at 121°C in steam at 2 atm and 35000 hours at 65°C/9596°C (relative humidity).

Comparative Example 5 (25) Using the same elements and cages as in Example 1,
256 kbi using the polyamic acid varnish of Comparative Example 1
tD-RAM was produced. Although the soft error rate and moisture resistance were excellent as in Example 1, defects occurred in 1 out of 20 pieces after 1000 cycles of the heat shock test and in 4 out of 20 pieces after 2000 cycles. The defect was caused by cracks in the cutting film reaching the wiring section, and is thought to be caused by stress caused by curing and shrinkage of the coat varnish.

Examples 2 to 7, Comparative Examples 6 to 9 The same elements as in Example 1 were used and mounted in the ceramic package shown in FIG. Next, Production Example 1.2.3.
8.9.10 and Comparative Example 1.2.3.4 polyamic acids were applied and cured under the same conditions as in Example 1. Next, sealing was performed using low melting point glass at 450° C. for 15 minutes.

The sealing status and heat shock resistance of the prepared samples were examined. The results are shown in Table 2.

(26) Table 2 From the results in Table 2, it can be seen that the polyimide used in the present invention has extremely excellent heat resistance and low thermal expansion, so it has excellent heat shock resistance.

Example 8, Comparative Example 10 (27) Same as Example 1 256 k 1) it D-RAM f
Using Figure 2 Ceramic Package Chip Carrier? Created. However, aluminum chelate coating, which is a pre-adhesion treatment for the α-ray shielding film, was not carried out. As the α-ray shielding film, the polyamic acids of Production Example 1.4 and Comparative Example 3 were used. After forming the α-ray shielding film, the element using the polyamic acid of Production Example 1 was disconnected during the cooling process. This is α
This is because the line shielding film peeled off. The cap was sealed using low melting point glass at 430° C. for 15 minutes. Thereafter, as a result of conducting a heat shock test t-500 cycles, disconnection also occurred in the element using the polyamic acid varnish of Comparative Example 3. The failure mode is also due to peeling of the α-ray shielding film. The product using the polyamic acid of Production Example 4 had no failures at all. The low thermal expansion polyimide useful in the present invention appears to have somewhat inferior adhesive properties compared to conventional DDIII polyimides.

In order to improve the adhesiveness, it is preferable to perform pretreatment with an aluminum chelate or a silane coupling agent, or to copolymerize a silicone monomer (28) to improve the adhesiveness.

Examples 9 to 13 and Comparative Examples 11 to 13 Using the same 256k1)it D-RAM as in Example 1, a memory element in a plastic package shown in FIG. 4 was fabricated in the following procedure. Production example 1.4.5.6.7
The polyamic acid film of Comparative Example 3 was used for coating at the silicone wafer stage.

All samples were subjected to aluminum chelate treatment except for the case where the varnish in Production Example 4 was used. Thereafter, the electrodes and dicing lines other than the active area of the memory element were etched out using photolithography. The curing conditions for the polyimide film before etching are 80°C/30 minutes + i
a.

℃/30 minutes. If it hardens further than this, it will become 50~80μ.
m cannot be etched. The etching speed is the same in all cases. Next, it was bonded with gold wire, sealed with an epoxy sealing resin (OML4000 manufactured by Hitachi Chemical), and the dam was cut and the lead pin was bent.

(29) For comparison, the plastic-sealed type was also mounted on a lead frame, bonded with gold wire, treated with aluminum chelate, formed an α-ray shielding film, and sealed with the same resin. The polyimides of Production Example 1 and Comparative Example 1 were used for the α-ray shielding film. The curing conditions are 80
℃/30 minutes + 250℃ 150 minutes. If the temperature is higher than this, the gold wire and the aluminum of the electrode form a eutectic, which significantly lowers the bonding strength and makes the wire more likely to break.

The stress after forming the α-ray shielding film was measured for warping of the wafer.

The sample was a silicone wafer with a diameter of 10 rows and a thickness of α5■.
I used the one that was fully coated with a 70 μm thick coating. The measurement is
Using a surface roughness meter, the surface roughness was measured at a position 45 mm from the center of the silicon wafer.

The etching properties were evaluated as follows.

Coat the wafer with a polyamic acid face using a spinner, and
Cures at 50°C/[L5 hours. On top of this is a negative photoresist OMR8M Tokyo Ohkako ($0) Gyosha I! ! Apply it to a thickness of about 2 μm and expose using a mass.
Developed with xylene solvent, rinsed with acetic acid esters,
Post-baked at 50°C/20 minutes. Thereafter, the partially imidized film was etched at 30° C. using a mixed solution of ethylenediamine (50 volume ft %) and hydrazine hydrate (70 volume ts) as an etchant. The appearance at that point was visually evaluated. The results are shown in Table 3 below.

(31) C32) From the results in Table 3, it can be seen that the stress caused by the coating film is much lower than that of conventional polyimide, and that no damage such as cracks is caused to the element after etching. In addition, with the botting method, aa
It can be seen that the moisture resistance is extremely excellent when compared with the case where the entire S membrane is formed. This is presumed to be because polyimide has a higher moisture absorption rate than the mold resin.

〔Effect of the invention〕

According to the present invention, the resin material used in the present invention has heat resistance,
Since it has excellent moisture resistance and low thermal expansion, a semiconductor device coated and protected by the resin material has excellent heat shock resistance, less damage, and is highly reliable.

[Brief explanation of drawings]

Figure 1 is a cross-sectional view of a semiconductor device in a ceramic package with a botting-type α-ray shielding film, and Figure 2 is a cross-sectional view of a semiconductor device in a ceramic package in which the linear shielding film in areas other than the active area is removed using a botting method. A cross-sectional view of the carrier, Figure 3 is a cross-sectional view of a memory element in a ceramic para (33) cage with a botting-type α-ray membrane, and Figure 4 is a plastic with the α-ray membrane removed from areas other than the active area. A cross-sectional view of a memory element in a package. FIG. 5 is a cross-sectional view of a chip carrier in a plastic package in which the α-ray film has been completely removed except for the active region. 1: α-ray velocity film, 2: Semiconductor element, 3: Ceramic package, 4: Lead bin, 5: Metal plate, 6: Low melting point glass for sealing, 7: Sealing resin patent applicant Hitachi, Ltd. Hitachi Kasei Kogyo Co., Ltd. agent Hiroshi Nakamoto (54) Continued from page 1 ■Inventor All area Tokuyuki Hitachi City Saiwaisho

Claims (1)

[Claims] 1. At least the active region on the semiconductor device is A OX
A semiconductor device characterized in that it is protected by a resin material having a coefficient of linear thermal expansion of 10-"K-' or less. 2. The resin material has the following general formula (1): (1) (However, in the formula R is the same or different nb, lower alkyl group,
Lower alkoxy group, fluorinated lower alkyl group, fluorinated lower alkoxy group, acyl group or halogen, n is 0 to 4
2. The semiconductor device according to claim 1, wherein the semiconductor device is a polyimide containing a chemical structural unit represented by . (v) The resin material has the following general formulas I and n:(g))n
CR)n can)n (2) (However, in the formula, R is the same or different, lower alkyl group,
Lower alkoxy group, fluorinated lower alkyl group, fluorinated lower alkoxy group, acyl group or halogen, nFiΩ~
2. The semiconductor device according to claim 1, wherein the semiconductor device is a polyimide containing chemical structural units represented by the following formulas: rs represents a divalent organic group and Ar4 represents a tetravalent organic group. 4. The semiconductor device according to claim 3, wherein the group rs in the formula (1) contains a siloxane skeleton. (3) 5 The group Ar in the formula (1) is represented by the following formula: 0H30H. The semiconductor device according to claim 4, which is a group represented by: k the semiconductor element in the device is a memory element,
6. The semiconductor device according to claim 1, wherein the package material is ceramic. l The semiconductor element in the device is a memory element,
6. The semiconductor device according to claim 1, wherein a low thermal expansion resin protective film is not formed on at least the electrode, and the package material is a synthetic resin.