KR960019584A - 화학 증착에 의해 증착된 개선된 티탄 질화물 층 및 그 제조 방법 - Google Patents

화학 증착에 의해 증착된 개선된 티탄 질화물 층 및 그 제조 방법 Download PDF

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KR960019584A
KR960019584A KR1019950041182A KR19950041182A KR960019584A KR 960019584 A KR960019584 A KR 960019584A KR 1019950041182 A KR1019950041182 A KR 1019950041182A KR 19950041182 A KR19950041182 A KR 19950041182A KR 960019584 A KR960019584 A KR 960019584A
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film
substrate
titanium nitride
vapor deposition
chemical vapor
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KR1019950041182A
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씨. 모세리 로데릭
에이. 릿타우 카알
라아이즈마커스 이보
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제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR960019584A publication Critical patent/KR960019584A/ko

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H—ELECTRICITY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
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Abstract

기판상에 화학 증착에 의해 증착된 필름의 특성은 상기 기판상에 바이어스 전압을 인가하는 동안 가스 플라즈마에서 처리함에 의해 변경될수 있다. 티탄 질화물의 경우에, 상기 필름의 밀도는 증가되고 그리고 상기 시이트 저항성은 감소되고 그리고 안정화된다.

Description

화학 증착에 의해 증착된 개선된 티탄 질화물 층 및 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 현(present) 증착 및 후속 증착 처리 가공에 의해 수행될 수 있는 화학증착 챔버의 개략적 다이어그램.

Claims (12)

  1. 기판상에 증착된 필름의 필름특성을 개선시키는 방법으로서, 필름에 에너지를 갖는 이온으로 충격을 가하는 단계를 포함하는 방법.
  2. 기판상에 증착된 상기 필름의 필름특성을 개선시키는 방법으로서, a) 진공 분위기에서 상기 기판상에 상기 필름을 증착하는 단계와 그리고, b) 상기 기판에 바이어스 전압을 인가시키는 동안 선구물질 가스의 플라즈마에 상기 필름을 노출시키는 단계를 포함하는 방법.
  3. 제2항에 있어서, 상기 필름이 티탄 질화물인 방법.
  4. 제3항에 있어서, 상기 필름이 금속 유기 티탄 화합물의 열분해에 의해 증착되는 방법.
  5. 제4항에 있어서, 상기 금속 유기 티탄 화합물은 R이 각각의 경우에 독립적으로 알킬 그룹인 하기의 일반식을 갖는 방법.
  6. 제3항에 있어서, 상기 가스가 질소인 방법.
  7. 제3항에 있어서, 약 100 내지 1000볼트의 바이어스 전압이 상기 기판상에 인가되는 것을 특징으로 하는 방법.
  8. 제2항에 있어서, 상기 기판이 반도체 기판인 방법.
  9. 금속 유기 티탄 화합물의 열부해에 의해 기판상에 증착된 티탄 질화물 필름의 저항성 및 안정성을 개선시키는 방법으로서, 선구물질 가스의 플라즈마의 존재하에 상기 기판에 바이어스 전압을 인가시킴에 의해 필름을 처리하는 단계를 포함하는 방법.
  10. 제9항에 있어서, 상기 선구물질 가스가 질소 또는 암모니아인 방법.
  11. 제9항에 있어서, 상기 인가된 전압이 약 100 내지 1000볼트인 방법.
  12. 제3항에 따라 제조된 티탄 질화물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950041182A 1994-11-14 1995-11-14 화학 증착에 의해 증착된 개선된 티탄 질화물 층 및 그 제조 방법 KR960019584A (ko)

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US33952194A 1994-11-14 1994-11-14
US08/339,521 1994-11-14

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291343B1 (en) * 1994-11-14 2001-09-18 Applied Materials, Inc. Plasma annealing of substrates to improve adhesion
US6365495B2 (en) 1994-11-14 2002-04-02 Applied Materials, Inc. Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature
US6251758B1 (en) 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
US6699530B2 (en) 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US6155198A (en) * 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
US5567483A (en) * 1995-06-05 1996-10-22 Sony Corporation Process for plasma enhanced anneal of titanium nitride
US5595784A (en) * 1995-08-01 1997-01-21 Kaim; Robert Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides
KR970052089A (ko) * 1995-12-05 1997-07-29
US5801098A (en) * 1996-09-03 1998-09-01 Motorola, Inc. Method of decreasing resistivity in an electrically conductive layer
US6872429B1 (en) * 1997-06-30 2005-03-29 Applied Materials, Inc. Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
US6475912B1 (en) 1998-06-01 2002-11-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield
US6555183B2 (en) 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
US6436819B1 (en) 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
US20040020599A1 (en) * 2000-12-27 2004-02-05 Sumi Tanaka Treating device
JP4916092B2 (ja) * 2004-02-26 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4636133B2 (ja) 2008-07-22 2011-02-23 東京エレクトロン株式会社 窒化チタン膜の改質方法及び改質装置
JP2010177382A (ja) * 2009-01-28 2010-08-12 Tokyo Electron Ltd 成膜方法及びプラズマ成膜装置
EP2875521B1 (en) * 2012-07-20 2020-03-11 FUJIFILM Corporation Etching method, and method of producing semiconductor substrate product and semiconductor device using the same
JP6462602B2 (ja) 2016-01-12 2019-01-30 信越化学工業株式会社 多層膜形成方法及びパターン形成方法
CN110875181A (zh) * 2018-08-30 2020-03-10 长鑫存储技术有限公司 介电材料层及其形成方法、应用其的半导体结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59197131A (ja) * 1983-04-25 1984-11-08 Toshiba Corp 半導体装置の電極膜形成方法
EP0174743A3 (en) * 1984-09-05 1988-06-08 Morton Thiokol, Inc. Process for transition metal nitrides thin film deposition
JPH02310918A (ja) * 1989-05-25 1990-12-26 Fujitsu Ltd 半導体装置の製造方法
JPH03135018A (ja) * 1989-10-20 1991-06-10 Hitachi Ltd 半導体装置の製造方法およびその装置
JPH04100221A (ja) * 1990-08-18 1992-04-02 Fujitsu Ltd 半導体装置の製造方法
JPH05230639A (ja) * 1991-08-30 1993-09-07 Oki Electric Ind Co Ltd 化合物膜の形成方法
US5273783A (en) 1993-03-24 1993-12-28 Micron Semiconductor, Inc. Chemical vapor deposition of titanium and titanium containing films using bis (2,4-dimethylpentadienyl) titanium as a precursor
US5246881A (en) 1993-04-14 1993-09-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity
US8708193B1 (en) 2011-11-16 2014-04-29 Andrew Davis Vending machine

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