KR950007032A - 반도체장치의 절연층 형성방법 및 그 형성장치 - Google Patents

반도체장치의 절연층 형성방법 및 그 형성장치 Download PDF

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KR950007032A
KR950007032A KR1019930017552A KR930017552A KR950007032A KR 950007032 A KR950007032 A KR 950007032A KR 1019930017552 A KR1019930017552 A KR 1019930017552A KR 930017552 A KR930017552 A KR 930017552A KR 950007032 A KR950007032 A KR 950007032A
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insulating layer
forming
semiconductor device
susceptor
layer
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KR1019930017552A
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KR970007116B1 (ko
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박인선
이명범
홍창기
김창규
정우인
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김광호
삼성전자 주식회사
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Priority to JP6179331A priority patent/JPH0786190A/ja
Priority to DE4430120A priority patent/DE4430120B4/de
Priority to CN94115591A priority patent/CN1051400C/zh
Priority to US08/296,931 priority patent/US5656337A/en
Publication of KR950007032A publication Critical patent/KR950007032A/ko
Priority to US08/465,015 priority patent/US5560778A/en
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract

저온에서 수행될 수 있고 공정이 간단하며 평탄도 및 증착특성이 우수한 절연층을 얻을 수 있는 반도체장치의 절연층 형성방법 및 그 형성장치가 개시된다. 이를 위하여 하부층의 전기적 극성에 따라 증착률이 달라지는 절연물질을 사용하고, 하부층 즉, 도전층과 하부절연층의 전기적 극성을 달리하도록 표면처리함으로써 도전층과 하부절연층에서의 절연물질의 증착율의 차이를 이용하여 메달전층간절연층이나 금속배선간 절연층을 형성하는 반도체장치의 절연층 형성방법이 제공된다. 또한 상술한 절연층 형성방법을 실시하기 위하여, 서셉터와 가스주입부 사이에 직류전원을 연결한 CVD장치가 제공된다.

Description

반도체장치의 절연층 형성방법 및 그 형성장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도 내지 제5C도는 본 발명의 일 실시예를 타나내는 공정순서도들이고
제6A도 내지 제6D도는 본 발명의 다른 실시예를 설명하기 위한 모식도들이다.

Claims (8)

  1. 하부절연층상에 도전물질을 도포하고 페터닝하여 상기 하부절연층의 일부분이 드러나도록 도전층을 형성하는 제1공정, 상기 도전층의 표면과 상기 드러난 하부절연층의 표면의 전기적 극성이 달라지도록 상기 도전층 및 상기 하부 절연층을 처리하는 제2공정 및 상기 처리된 도전층 표면과 상기 처리된 하부절연층 표면의 전기적극성에 따라 증착률이 달라지는 절연물질을 증착함으로써 평탄도가 우수한 절연층을 형성하는 제3공정을 포함하는 반도체장치의 절연층 형성방법.
  2. 제1항에 있어서, 상기 제2공정의 상기 처리는 플라즈마 처리임을 특징으로 하는 상기 반도체장치의 절연층 형성방법.
  3. 제2항에 있어서, 상기 플라즈마는 N2+NH3, N2, N2O, O2, O3및 Ar플라즈마로 이루어진 군에서 선택된 어느 하나임을 특징으로 하는 상기 반도체장치의 절연층 형성방법.
  4. 제1항에 있어서, 상기 제2공정의 상기 처리는 이온을 이온주입하는 것임을 특징으로 하는 상기 반도체장치의 절연층 형성방법.
  5. 제1항에 있어서, 상기 제2공정의 상기 처리는 서셉터와 가스주입부 사이에 직류전원을 연결한 CVD장치에 의해서 수행되는 것을 특징으로 하는 반도체장치의 절연층 형성방법.
  6. 제5항에 있어서, 상기 제2공정의 상기 처리는 CVD장치의 서셉터쪽에 음극을 연결하는 것을 특징으로 하는 상기 반도체장치의 절연층 형성방법.
  7. 제1항에 있어서, 상기 제3공정의 상기 절연물질은 O3-TEOS 산화막이나 O3-HMDS 산화막임을 특징으로 하는 상기 반도체장치의 절연층 형성방법.
  8. 가스주입부와 웨이퍼를 부착하는 부분인 서셉터를 포함하는 CVD장치에 있어서, 상기 가스주입부와 상기 서셉터 사이에 직류전원을 연결하는 것을 특징으로 하는 상기 CVD장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930017552A 1993-08-31 1993-08-31 반도체장치의 절연층 형성방법 및 그 형성장치 KR970007116B1 (ko)

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Application Number Priority Date Filing Date Title
KR1019930017552A KR970007116B1 (ko) 1993-08-31 1993-08-31 반도체장치의 절연층 형성방법 및 그 형성장치
JP6179331A JPH0786190A (ja) 1993-08-31 1994-07-29 膜形成方法およびその形成装置
DE4430120A DE4430120B4 (de) 1993-08-31 1994-08-25 Verfahren zur Erzeugung eines Dielektrikums
CN94115591A CN1051400C (zh) 1993-08-31 1994-08-30 电介质形成方法
US08/296,931 US5656337A (en) 1993-08-31 1994-08-31 Method of forming a dielectric layer
US08/465,015 US5560778A (en) 1993-08-31 1995-06-05 Apparatus for forming a dielectric layer

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KR1019930017552A KR970007116B1 (ko) 1993-08-31 1993-08-31 반도체장치의 절연층 형성방법 및 그 형성장치

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KR970007116B1 KR970007116B1 (ko) 1997-05-02

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100432538B1 (ko) * 2000-03-31 2004-05-24 가부시끼가이샤 한도따이 프로세스 켄큐쇼 피성막면의 개질 방법 및 반도체 장치의 제조 방법
KR100463328B1 (ko) * 1997-08-25 2005-04-06 삼성테크윈 주식회사 인터벌촬영시촬영조건조정이가능한장치및그방법

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Publication number Priority date Publication date Assignee Title
FR2711035B1 (fr) * 1993-10-04 1995-12-29 Plasmion Dispositif et procédé pour former un plasma par application de micro-ondes.
WO1995027570A1 (en) * 1994-04-08 1995-10-19 Ray Mark A Selective plasma deposition
US6699530B2 (en) * 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
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US5560778A (en) 1996-10-01
US5656337A (en) 1997-08-12
DE4430120A1 (de) 1995-03-02
JPH0786190A (ja) 1995-03-31
DE4430120B4 (de) 2007-04-05
CN1108805A (zh) 1995-09-20
CN1051400C (zh) 2000-04-12

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