KR970003544A - 개선된 티타늄 함유 방지층을 형성하기 위한 공정 - Google Patents

개선된 티타늄 함유 방지층을 형성하기 위한 공정 Download PDF

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KR970003544A
KR970003544A KR1019960020932A KR19960020932A KR970003544A KR 970003544 A KR970003544 A KR 970003544A KR 1019960020932 A KR1019960020932 A KR 1019960020932A KR 19960020932 A KR19960020932 A KR 19960020932A KR 970003544 A KR970003544 A KR 970003544A
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South Korea
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oxygen
layer
titanium
argon
plasma
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KR1019960020932A
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후 지안밍
첸 후센
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조셉 제이. 스위니
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR970003544A publication Critical patent/KR970003544A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner

Abstract

알루미늄이 기판에 스파이크하는 것을 방지하기 위해 알루미늄층과 실리콘 기판 사이에 개선된 질화 티타늄 방지층을 형성하는데 있어 첫번째 스퍼터는 기판위에 티타늄층을 증착하고, 그 위에 산소 함유 티타늄층을 형성하고, 산소 함유 층 위에 질화 티타늄층을 스퍼터 증착하는 것이다. 산소 함유 층은 산소 함유 플라스마 하에서 형성될 수 있고 또는 티타늄이 산소 존재하에서 스퍼터될 수 있다. 티타늄 함유 층들은 플라스마를 형성하기 위해 기판 지지부에 전원을 가진 단일 스퍼터 챔버에서 증착될 수 있다. 알루미늄 접촉층은 질화티타늄층 위에 증착된다.

Description

개선된 티타늄 함유 방지층을 형성하기 위한 공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 공정이 이행되는 스퍼터 챔버의 단면 개요도.

Claims (19)

  1. 기판 지지부에 연결된 RF 전원을 가진 스퍼터 챔버에서 질화 티타늄 방지층을 증착하기 위한 공정으로서, a) 기판의 노출된 표면에 티타늄층의 스퍼터 증착, b) 티타늄층 위에 산소 함유 티타늄층의 형성, 그리고 c) 그 위에 질화 티타늄층의 스퍼터 증착으로 구성된 공정.
  2. 제1항에 있어서, 산소 함유 기체를 상기 스퍼터 챔버에 넣으므로서 산소 함유 티타늄층이 형성되는 공정.
  3. 제2항에 있어서, 티타늄층을 산소 플라스마에 노출함으로서 산소 함유 티타늄층이 형성되는 공정.
  4. 제2항에 있어서, 산소와 아르곤 기체의 혼합물로부터 상기 산소 플라스마가 형성되는 공정.
  5. 제2항에 있어서, 산소와 질소 기체의 혼합물로부터 상기 산소 플라스마가 형성되는 공정.
  6. 제2항에 있어서, 산소, 아르곤 및 질소기체의 혼합물로부터 상기 산소 플라스마가 형성되는 공정.
  7. 제2항에 있어서, 기판 지지부에 RF 전력을 가함으로서 상기 플라스마가 형성되는 공정.
  8. 제1항에 있어서, 산소 함유 기체하에서 티타늄의 스퍼터에 의해 상기 산소 함유층이 형성되는 공정.
  9. 제8항에 있어서, 상기 산소 함유 기체가 산소와 아르곤의 혼합물인 공정.
  10. 제8항에 있어서, 상기 산소 함유 기체가 산소, 아르곤 및 질소의 혼합물인 공정.
  11. 제8항에 있어서, 상기 산소 함유 기체로 스퍼터하는 동안에 RF 전원에 연결된 기판 지지부에 RF 전력이 가해지는 공정.
  12. 제1항에 있어서, 산소 함유 티타늄층의 형성후에 질화 티타늄을 증착하기 위해 같은 챔버에서 계속 스퍼터하는 공정.
  13. 제1항에 있어서, 산소 함유 티타늄층이 약 20A의 두께로 증착될때까지 산소 함유 티타늄층의 형성을 계속하는 공정.
  14. 제1항에 있어서, 티타늄 스퍼터 단계에서 산소가 아르곤에 첨가되는 공정.
  15. 제1항에 있어서, 티타늄 스퍼터 단계에서 산소와 질소가 아르곤에 첨가되는 공정.
  16. 제1항에 있어서, a), b) 및 c)단계들이 단일 스퍼터 챔버에서 이행되는 공정.
  17. 제1항에 있어서, a)와 b)단계들이 한 스퍼터 챔버에서 이행되고 c)단계는 다른 스퍼터 챔버에서 이행되는 공정.
  18. 제1항에 있어서, a)단계가 한 스퍼터 챔버에서 이행되고 b)와 c)단계는 다른 스퍼터 챔버에서 이행되는 공정.
  19. 제1항에 있어서, 알루미늄이 질화 티타늄층 위에 스퍼터되는 공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960020932A 1995-06-07 1996-06-07 개선된 티타늄 함유 방지층을 형성하기 위한 공정 KR970003544A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/482,379 US5858184A (en) 1995-06-07 1995-06-07 Process for forming improved titanium-containing barrier layers
US08/482,379 1995-06-07

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KR970003544A true KR970003544A (ko) 1997-01-28

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US (2) US5858184A (ko)
EP (1) EP0747499A1 (ko)
JP (1) JPH0920518A (ko)
KR (1) KR970003544A (ko)
TW (1) TW287206B (ko)

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US6007684A (en) 1999-12-28
JPH0920518A (ja) 1997-01-21
EP0747499A1 (en) 1996-12-11
US5858184A (en) 1999-01-12
TW287206B (en) 1996-10-01

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