KR970063503A - 알루미늄 접촉부용 티타늄 알루미나이드 습윤층 - Google Patents
알루미늄 접촉부용 티타늄 알루미나이드 습윤층 Download PDFInfo
- Publication number
- KR970063503A KR970063503A KR1019970003266A KR19970003266A KR970063503A KR 970063503 A KR970063503 A KR 970063503A KR 1019970003266 A KR1019970003266 A KR 1019970003266A KR 19970003266 A KR19970003266 A KR 19970003266A KR 970063503 A KR970063503 A KR 970063503A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- aluminum
- tial
- sputtered
- titanium aluminide
- Prior art date
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract 8
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract 8
- OQPDWFJSZHWILH-UHFFFAOYSA-N [Al].[Al].[Al].[Ti] Chemical compound [Al].[Al].[Al].[Ti] OQPDWFJSZHWILH-UHFFFAOYSA-N 0.000 title claims abstract 5
- 229910021324 titanium aluminide Inorganic materials 0.000 title claims abstract 5
- 238000000034 method Methods 0.000 claims abstract 9
- 238000000151 deposition Methods 0.000 claims abstract 4
- 239000000758 substrate Substances 0.000 claims abstract 2
- 229910010038 TiAl Inorganic materials 0.000 claims 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 3
- 238000005289 physical deposition Methods 0.000 claims 3
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 claims 1
- 229910000951 Aluminide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
본 발명은 개선된 알루미늄 접촉부 및 그 형성 방법에 관한 것으로서, 개구내에서 티타늄 알루미나이드 습윤층을 스퍼터 증착하는 단계와 그위에 알루미늄층을 증착하는 단계를 포함하여 기판내의 개구에 접촉부를 형성하고, 티타늄 알루미나이드 습윤층은 제어된 두께를 갖춘다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 접촉물의 횡단면도.
Claims (10)
- a) 개구의 바닥과 측벽을 커버하도록 시준기를 통해 티타늄 알루미나이드 층을 스퍼터 증착하는 단계와, b) 그위에 알루미늄 층을 스퍼터 증착하는 단계를 연속적으로 포함하는 알루미늄 접촉부 층을 기판의 개구에 증착하는 것을 특징으로 하는 방법.
- 제1항에 있어서, TiAlx는 X가 1-3인 TiAlx타겟으로부터 스퍼터하는 것을 특징으로 하는 방법.
- 제2항에 있어서, TiAlx가 약 50-500옹그스트롬의 깊이로 스퍼터링되는 것을 특징으로 하는 방법.
- 제2항에 있어서, X가 약 3인 것을 특징으로 하는 방법.
- 제2항에 있어서, 알루미늄이 500-550℃의 온도에서 TiAlx층위에 스퍼터 증착되는 것을 특징으로 하는 방법.
- 제2항에 있어서, 알루미늄이 약 350-400℃의 제1온도에서 TiAlx층위에 스퍼터 증착되고 그리고 이어서 상기 개구를 충전시키도록 500-550℃의 제2온도에서 스퍼터되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 티타늄 질화물이 개구내의 제1층으로서 약 50-200옹그스트롬의 두께로 스퍼터 증착되는 것을 특징으로 하는 방법.
- 제7항에 있어서, 티타늄 질화물이 제1물리 증착 챔버에서 스퍼터되고, 티타늄 알루미나이드가 제2물리 증착 챔버에서 스퍼터되고 그리고 알루미늄이 진공으로 기판을 유지하는 한편 제3물리 증착 챔버에서 스퍼터되는 것을 특징으로 하는 방법.
- 약 50-200옹그스트롬 두께의 티타늄 질화물의 제1층, 50-500옹그스트롬 두께를 갖는 X가 1-3인 티타늄 알루미나이드(TiAlx)의 제2층, 및 알루미늄의 제3평탄화된 층을 포함하는 것을 특징으로 하는 알루미늄 접촉부.
- 제9항에 있어서, X가 약 3인 것을 특징으로 하는 알루미늄 접촉부.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59569596A | 1996-02-02 | 1996-02-02 | |
US8/595,695 | 1996-02-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970063503A true KR970063503A (ko) | 1997-09-12 |
Family
ID=24384292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970003266A KR970063503A (ko) | 1996-02-02 | 1997-02-03 | 알루미늄 접촉부용 티타늄 알루미나이드 습윤층 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0788145A3 (ko) |
JP (1) | JPH1074707A (ko) |
KR (1) | KR970063503A (ko) |
TW (1) | TW367528B (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6268284B1 (en) | 1998-10-07 | 2001-07-31 | Tokyo Electron Limited | In situ titanium aluminide deposit in high aspect ratio features |
JP3910752B2 (ja) | 1999-03-23 | 2007-04-25 | 株式会社東芝 | 半導体装置の製造方法 |
KR100477812B1 (ko) * | 2000-07-31 | 2005-03-21 | 주식회사 하이닉스반도체 | 구리를 사용한 금속 콘택 형성방법 |
US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
KR100595855B1 (ko) | 2004-12-29 | 2006-06-30 | 동부일렉트로닉스 주식회사 | 알루미늄 증착 콘택트 형성 방법 |
US20110291147A1 (en) | 2010-05-25 | 2011-12-01 | Yongjun Jeff Hu | Ohmic contacts for semiconductor structures |
JP5032687B2 (ja) * | 2010-09-30 | 2012-09-26 | 株式会社神戸製鋼所 | Al合金膜、Al合金膜を有する配線構造、およびAl合金膜の製造に用いられるスパッタリングターゲット |
CN107578994B (zh) | 2011-11-23 | 2020-10-30 | 阿科恩科技公司 | 通过插入界面原子单层改进与iv族半导体的金属接触 |
US9418856B2 (en) | 2014-11-06 | 2016-08-16 | Samsung Electronics Co., Ltd. | Methods of forming titanium-aluminum layers for gate electrodes and related semiconductor devices |
US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
DE112017005855T5 (de) | 2016-11-18 | 2019-08-01 | Acorn Technologies, Inc. | Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe |
CN111712592B (zh) | 2018-02-12 | 2024-04-26 | K·A·H·阿波-哈希马 | 由碳氢化合物制备醇的方法和装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5658828A (en) * | 1989-11-30 | 1997-08-19 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum contact through an insulating layer |
US5371042A (en) * | 1992-06-16 | 1994-12-06 | Applied Materials, Inc. | Method of filling contacts in semiconductor devices |
DE19515564B4 (de) * | 1994-04-28 | 2008-07-03 | Denso Corp., Kariya | Elektrode für ein Halbleiterbauelement und Verfahren zur Herstellung derselben |
-
1997
- 1997-02-01 TW TW086101204A patent/TW367528B/zh active
- 1997-02-03 EP EP97101630A patent/EP0788145A3/en not_active Withdrawn
- 1997-02-03 JP JP9055375A patent/JPH1074707A/ja not_active Withdrawn
- 1997-02-03 KR KR1019970003266A patent/KR970063503A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0788145A3 (en) | 1998-08-26 |
EP0788145A2 (en) | 1997-08-06 |
TW367528B (en) | 1999-08-21 |
JPH1074707A (ja) | 1998-03-17 |
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