TW367528B - Titanium aluminide wetting layer for aluminum contacts - Google Patents
Titanium aluminide wetting layer for aluminum contactsInfo
- Publication number
- TW367528B TW367528B TW086101204A TW86101204A TW367528B TW 367528 B TW367528 B TW 367528B TW 086101204 A TW086101204 A TW 086101204A TW 86101204 A TW86101204 A TW 86101204A TW 367528 B TW367528 B TW 367528B
- Authority
- TW
- Taiwan
- Prior art keywords
- titanium aluminide
- wetting layer
- aluminum contacts
- aluminum
- opening
- Prior art date
Links
- OQPDWFJSZHWILH-UHFFFAOYSA-N [Al].[Al].[Al].[Ti] Chemical compound [Al].[Al].[Al].[Ti] OQPDWFJSZHWILH-UHFFFAOYSA-N 0.000 title abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052782 aluminium Inorganic materials 0.000 title abstract 3
- 229910021324 titanium aluminide Inorganic materials 0.000 title abstract 3
- 238000009736 wetting Methods 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59569596A | 1996-02-02 | 1996-02-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW367528B true TW367528B (en) | 1999-08-21 |
Family
ID=24384292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086101204A TW367528B (en) | 1996-02-02 | 1997-02-01 | Titanium aluminide wetting layer for aluminum contacts |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0788145A3 (zh) |
| JP (1) | JPH1074707A (zh) |
| KR (1) | KR970063503A (zh) |
| TW (1) | TW367528B (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268284B1 (en) * | 1998-10-07 | 2001-07-31 | Tokyo Electron Limited | In situ titanium aluminide deposit in high aspect ratio features |
| JP3910752B2 (ja) * | 1999-03-23 | 2007-04-25 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100477812B1 (ko) * | 2000-07-31 | 2005-03-21 | 주식회사 하이닉스반도체 | 구리를 사용한 금속 콘택 형성방법 |
| US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
| US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| KR100595855B1 (ko) | 2004-12-29 | 2006-06-30 | 동부일렉트로닉스 주식회사 | 알루미늄 증착 콘택트 형성 방법 |
| US20110291147A1 (en) | 2010-05-25 | 2011-12-01 | Yongjun Jeff Hu | Ohmic contacts for semiconductor structures |
| JP5032687B2 (ja) * | 2010-09-30 | 2012-09-26 | 株式会社神戸製鋼所 | Ａｌ合金膜、Ａｌ合金膜を有する配線構造、およびＡｌ合金膜の製造に用いられるスパッタリングターゲット |
| GB2511245C (en) | 2011-11-23 | 2016-04-27 | Acorn Tech Inc | Improving metal contacts to group IV semiconductors by inserting interfacial atomic monolayers |
| US9418856B2 (en) | 2014-11-06 | 2016-08-16 | Samsung Electronics Co., Ltd. | Methods of forming titanium-aluminum layers for gate electrodes and related semiconductor devices |
| US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
| WO2018094205A1 (en) | 2016-11-18 | 2018-05-24 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
| CN111712592B (zh) | 2018-02-12 | 2024-04-26 | K·A·H·阿波-哈希马 | 由碳氢化合物制备醇的方法和装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5658828A (en) * | 1989-11-30 | 1997-08-19 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum contact through an insulating layer |
| US5371042A (en) * | 1992-06-16 | 1994-12-06 | Applied Materials, Inc. | Method of filling contacts in semiconductor devices |
| DE19515564B4 (de) * | 1994-04-28 | 2008-07-03 | Denso Corp., Kariya | Elektrode für ein Halbleiterbauelement und Verfahren zur Herstellung derselben |
-
1997
- 1997-02-01 TW TW086101204A patent/TW367528B/zh active
- 1997-02-03 JP JP9055375A patent/JPH1074707A/ja not_active Withdrawn
- 1997-02-03 KR KR1019970003266A patent/KR970063503A/ko not_active Application Discontinuation
- 1997-02-03 EP EP97101630A patent/EP0788145A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0788145A2 (en) | 1997-08-06 |
| EP0788145A3 (en) | 1998-08-26 |
| JPH1074707A (ja) | 1998-03-17 |
| KR970063503A (ko) | 1997-09-12 |
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