KR880010479A - 티타늄/질화티타늄 이중층을 제조하는 방법 - Google Patents

티타늄/질화티타늄 이중층을 제조하는 방법 Download PDF

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Publication number
KR880010479A
KR880010479A KR1019880001268A KR880001268A KR880010479A KR 880010479 A KR880010479 A KR 880010479A KR 1019880001268 A KR1019880001268 A KR 1019880001268A KR 880001268 A KR880001268 A KR 880001268A KR 880010479 A KR880010479 A KR 880010479A
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South Korea
Prior art keywords
deposition
titanium
substrate
titanium nitride
during
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KR1019880001268A
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English (en)
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KR910009608B1 (ko
Inventor
콜하제 아르민
히겔린 게랄트
Original Assignee
휘타쉬, 네테부쉬
지멘스 악티엔게젤샤프트
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Publication of KR880010479A publication Critical patent/KR880010479A/ko
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Publication of KR910009608B1 publication Critical patent/KR910009608B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric

Abstract

내용 없음

Description

티타늄/질화티타늄 이중층을 제조하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 방법에 의하여 제조된 층구조의 단면도.
제2도는 제1도로부터 발췌한 부분에 대한 도면.
제3도는 피복을 위해 제공된 히이터와 스퍼터링 타겟으로 되어 있는 팰리트의 평면도.

Claims (9)

  1. 용착의 각각의 사이클 동안에 몇몇의 개개의 층으로 티타늄 타겟으로 부터의 캐소우드 스퍼터링에 의해 하나의 체임버로 된 장치에서 티타늄층을 기판상에 용착시키고, 용착의 각각의 사이클 동안에 몇몇의 개개의 층으로 질소가스 존재하에서 상기의 체임버내에서 질화티타늄층을 기판상에 용착시키고, 개개의 층들을 용착시키는 사이에 기판과 용착층을 열처리하고, 질화티타늄의 용착동안에 화학양론적 질화티타늄을 형성하는데 필요한 값을 초과하는 값에 질소함량을 상기 장치에 유지시키는 단계로 이루어지는 티타늄 및 질화티타늄의 연속적인 층들을 기판상에 만드는 방법.
  2. 제1항에 있어서, 개개의 두께가 각각 3 내지 5mm임을 특징으로 하는 방법.
  3. 제1항에 있어서, 열처리가 250° 내지 350℃의 온도에서 행해짐을 특징으로 하는 방법.
  4. 제1항에 있어서, 장치내에 있는 지지체상에 다수의 기판조각을 위치시키고, 지지체의 1회전이 용착의 1사이클에 해당하도록 층들을 용착시키는 동안에 지지체를 회전시키는 단계를 추가로 포함함을 특징으로 하는 방법.
  5. 제4항에 있어서, 스퍼터링력이 약 3Kw로 조절됨을 특징으로 하는 방법.
  6. 제1항에 있어서, 적어도 4 티타늄층들과 적어도 20 질화티타늄층들을 용착시키기 위하여 용착이 계속됨을 특징으로 하는 방법.
  7. 제1항에 있어서, 아르곤이 운반가스로서 장치에 도입되고 장치의 초기압력이 적어도 7×10-5Pa임을 특징으로 하는 방법.
  8. 제1항에 있어서, 아르곤이 티타늄 용착동안에 45 내지 50sccm의 비율로 장치에 도입되고, 아르곤과 질소가 질화티타늄 용착동안에 각각 20 내지 25 sccm과 30 내지 35sccm의 비율로 장치에 도입되며, 이 장치내에 스퍼터링 압력이 약 0.7pa임을 특징으로 하는 방법.
  9. 제1항에 있어서, 용착을 시작하기에 전에 기판이 플루오르화수소 함유 공정에서 세척됨을 특징으로 하는 방법.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880001268A 1987-02-10 1988-02-10 티타늄/질화티타늄 이중층을 제조하는 방법 KR910009608B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3704055.3 1987-02-10
DE3704055 1987-02-10

Publications (2)

Publication Number Publication Date
KR880010479A true KR880010479A (ko) 1988-10-10
KR910009608B1 KR910009608B1 (ko) 1991-11-23

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KR1019880001268A KR910009608B1 (ko) 1987-02-10 1988-02-10 티타늄/질화티타늄 이중층을 제조하는 방법

Country Status (7)

Country Link
US (1) US4783248A (ko)
EP (1) EP0280089B1 (ko)
JP (1) JPH0750699B2 (ko)
KR (1) KR910009608B1 (ko)
AT (1) ATE62355T1 (ko)
DE (1) DE3862213D1 (ko)
HK (1) HK76392A (ko)

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Also Published As

Publication number Publication date
KR910009608B1 (ko) 1991-11-23
EP0280089B1 (de) 1991-04-03
DE3862213D1 (de) 1991-05-08
ATE62355T1 (de) 1991-04-15
JPH0750699B2 (ja) 1995-05-31
EP0280089A1 (de) 1988-08-31
HK76392A (en) 1992-10-09
JPS63202911A (ja) 1988-08-22
US4783248A (en) 1988-11-08

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