KR970003431A - 개선된 질화 티타늄 함유 방지층을 형성하기 위한 연속적인 방법 - Google Patents
개선된 질화 티타늄 함유 방지층을 형성하기 위한 연속적인 방법 Download PDFInfo
- Publication number
- KR970003431A KR970003431A KR1019960020931A KR19960020931A KR970003431A KR 970003431 A KR970003431 A KR 970003431A KR 1019960020931 A KR1019960020931 A KR 1019960020931A KR 19960020931 A KR19960020931 A KR 19960020931A KR 970003431 A KR970003431 A KR 970003431A
- Authority
- KR
- South Korea
- Prior art keywords
- titanium
- layer
- substrate
- titanium nitride
- chamber
- Prior art date
Links
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims abstract 7
- 230000004888 barrier function Effects 0.000 title claims abstract 4
- 238000011437 continuous method Methods 0.000 title 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract 13
- 229910052719 titanium Inorganic materials 0.000 claims abstract 13
- 239000010936 titanium Substances 0.000 claims abstract 13
- 239000000758 substrate Substances 0.000 claims abstract 12
- 238000004544 sputter deposition Methods 0.000 claims abstract 5
- 238000000151 deposition Methods 0.000 claims abstract 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000001301 oxygen Substances 0.000 claims abstract 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 3
- 229910010282 TiON Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 235000014653 Carica parviflora Nutrition 0.000 claims 1
- 241000243321 Cnidaria Species 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000012300 argon atmosphere Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000010924 continuous production Methods 0.000 abstract 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
견고한 티타늄 함유 방지층의 증착을 위한 연속적인 공정은 단일 기판 스퍼터 챔버에서 첫 번 티타늄층을 스퍼터하는 단계, 그 위에 질화 티타늄 층을 스퍼터하는 단계, 얇은 TiON층을 증착하기 위해 티타늄 음극판을 스퍼터하는 동안 질화 티타늄 층의 산소 함유 플라스마로 처리하는 단계와 마지막으로 질화 티타늄 위에 티타늄층의 스퍼터하는 단계들로 구성한다. 마지막 단계는 티타늄 음극판으로부터 불순물을 제거하여 음극판이 망치는 것을 방지한다. 그러므로 방지층의 특성을 저하시키지 않고 티타늄 음극판을 망치지 않으면서 상기 챔버에서 다음 기판을 계속 처리할 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 공정이 수행될 수 있는 스퍼터 챔버의 단면 개요도이다.
Claims (6)
- 음극판, 음극판에 연결된 직류 전원, 기판 지지부, 기판 지지부에 연결된 RF 전원 및 기체 주입구를 포함한 단일 기판 스퍼터 챔버에서 개선된 티타늄 함유 방지층을 형성하기 위한 대량 생산에 적합한 방법으로서, a) 상기 챔버로 기판을 이전하여 아르곤 대기 하에서 상기 기판 위에 첫 티타늄층을 스퍼터 증착하는 단계, b) 상기 기판 위에 아르곤과 질소 하에서 질화 티타늄의 두번째 층을 스퍼터 증착하는 단계, c) 음극판에 직류전기를 가함으로서 티타늄 음극판을 계속 스퍼터하는 동안 FR 전원을 켜고 아르곤과 산소 혼합물로부터 기판에 인접되게 플라스마를 형성하는 단계, d) 산소를 끄고 약 3초 동안 처리된 질화 티타늄 층 위에 두번째 티타늄 층을 스퍼터 증착하는 단계와, e) 상기 기판을 상기 챔버 밖으로 이동하고 다른 기판을 상기 챔버 안으로 들여오는 단계들로 연속적으로 이루어진 방법.
- 제1항에 있어서, 첫 티타늄층과 질화 티타늄 층을 합친 두께가 약 1000A인 방법.
- 제1항에 있어서, 상기 질화 티타늄 층이 산호 플라즈마 안에서 약 30초 동안 처리되는 방법.
- 제1항에 있어서, 약 20 ~ 100A 두께의 TiON층이 c)단계에서 증착되는 방법.
- 제1항에 있어서, 상기 두께 티타늄층이 약 80 ~ 200A 두께인 방법.
- 제1항에 있어서, 기판을 챔버 밖으로 이동한 후에 두번째 진공 챔버에서 기판 위에 알루미늄층을 증착하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/481,550 | 1995-06-07 | ||
US08/481,550 US5972178A (en) | 1995-06-07 | 1995-06-07 | Continuous process for forming improved titanium nitride barrier layers |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970003431A true KR970003431A (ko) | 1997-01-28 |
Family
ID=23912391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960020931A KR970003431A (ko) | 1995-06-07 | 1996-06-07 | 개선된 질화 티타늄 함유 방지층을 형성하기 위한 연속적인 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5972178A (ko) |
EP (1) | EP0747500A1 (ko) |
JP (1) | JPH09190986A (ko) |
KR (1) | KR970003431A (ko) |
TW (1) | TW382028B (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5858184A (en) * | 1995-06-07 | 1999-01-12 | Applied Materials, Inc. | Process for forming improved titanium-containing barrier layers |
DE69703851T2 (de) * | 1996-02-26 | 2001-04-26 | Applied Materials Inc | Barriereschichten aus Titannitrid |
US5895266A (en) * | 1996-02-26 | 1999-04-20 | Applied Materials, Inc. | Titanium nitride barrier layers |
GB2319533B (en) | 1996-11-22 | 2001-06-06 | Trikon Equip Ltd | Methods of forming a barrier layer |
GB2319532B (en) | 1996-11-22 | 2001-01-31 | Trikon Equip Ltd | Method and apparatus for treating a semiconductor wafer |
TW417249B (en) * | 1997-05-14 | 2001-01-01 | Applied Materials Inc | Reliability barrier integration for cu application |
JP3221480B2 (ja) | 1997-08-22 | 2001-10-22 | 日本電気株式会社 | 半導体装置の製造方法 |
KR100458294B1 (ko) * | 1997-12-30 | 2005-02-23 | 주식회사 하이닉스반도체 | 반도체소자의장벽금속층형성방법 |
JP3606095B2 (ja) * | 1998-10-06 | 2005-01-05 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2000306997A (ja) * | 1999-04-20 | 2000-11-02 | Nec Corp | バリアメタル層を有する半導体装置及びその製造方法 |
US6130155A (en) * | 1999-07-02 | 2000-10-10 | Promos Technologies, Inc. | Method of forming metal lines in an integrated circuit having reduced reaction with an anti-reflection coating |
US6824825B2 (en) * | 1999-09-13 | 2004-11-30 | Tokyo Electron Limited | Method for depositing metallic nitride series thin film |
US7037830B1 (en) | 2000-02-16 | 2006-05-02 | Novellus Systems, Inc. | PVD deposition process for enhanced properties of metal films |
US6451690B1 (en) * | 2000-03-13 | 2002-09-17 | Matsushita Electronics Corporation | Method of forming electrode structure and method of fabricating semiconductor device |
US6562715B1 (en) | 2000-08-09 | 2003-05-13 | Applied Materials, Inc. | Barrier layer structure for copper metallization and method of forming the structure |
JP3545744B2 (ja) * | 2001-12-28 | 2004-07-21 | 沖電気工業株式会社 | 半導体素子の製造方法 |
US8525287B2 (en) | 2007-04-18 | 2013-09-03 | Invisage Technologies, Inc. | Materials, systems and methods for optoelectronic devices |
CN102017147B (zh) | 2007-04-18 | 2014-01-29 | 因维萨热技术公司 | 用于光电装置的材料、系统和方法 |
US20100044676A1 (en) | 2008-04-18 | 2010-02-25 | Invisage Technologies, Inc. | Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals |
US8203195B2 (en) | 2008-04-18 | 2012-06-19 | Invisage Technologies, Inc. | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom |
WO2011156507A1 (en) | 2010-06-08 | 2011-12-15 | Edward Hartley Sargent | Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance |
US9177826B2 (en) | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
TWI766789B (zh) | 2015-06-18 | 2022-06-01 | 美商應用材料股份有限公司 | 用於均勻且共形之混成氧化鈦薄膜的沉積方法 |
US10975465B2 (en) * | 2016-05-16 | 2021-04-13 | Ulvac, Inc. | Method of forming internal stress control film |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5232871A (en) * | 1990-12-27 | 1993-08-03 | Intel Corporation | Method for forming a titanium nitride barrier layer |
EP0545602A1 (en) * | 1991-11-26 | 1993-06-09 | STMicroelectronics, Inc. | Method for forming barrier metal layers |
JP3343620B2 (ja) * | 1992-04-09 | 2002-11-11 | アネルバ株式会社 | マグネトロンスパッタリングによる薄膜形成方法および装置 |
US5240880A (en) * | 1992-05-05 | 1993-08-31 | Zilog, Inc. | Ti/TiN/Ti contact metallization |
EP0598422B1 (en) * | 1992-10-15 | 2000-09-13 | Koninklijke Philips Electronics N.V. | Method of forming a Ti and a TiN layer on a semiconductor body by a sputtering process, comprising an additional step of cleaning the target |
US5378660A (en) * | 1993-02-12 | 1995-01-03 | Applied Materials, Inc. | Barrier layers and aluminum contacts |
US5514908A (en) * | 1994-04-29 | 1996-05-07 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit with a titanium nitride contact barrier having oxygen stuffed grain boundaries |
JPH08130302A (ja) * | 1994-10-31 | 1996-05-21 | Toshiba Corp | 半導体装置及びその製造方法 |
-
1995
- 1995-06-07 US US08/481,550 patent/US5972178A/en not_active Expired - Fee Related
- 1995-06-26 TW TW084106523A patent/TW382028B/zh not_active IP Right Cessation
-
1996
- 1996-06-07 JP JP8168267A patent/JPH09190986A/ja not_active Withdrawn
- 1996-06-07 KR KR1019960020931A patent/KR970003431A/ko not_active Application Discontinuation
- 1996-06-07 EP EP96109199A patent/EP0747500A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
TW382028B (en) | 2000-02-11 |
EP0747500A1 (en) | 1996-12-11 |
US5972178A (en) | 1999-10-26 |
JPH09190986A (ja) | 1997-07-22 |
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