KR970030381A - 알루미늄 접촉 형성을 위한 개선된 방법 - Google Patents

알루미늄 접촉 형성을 위한 개선된 방법 Download PDF

Info

Publication number
KR970030381A
KR970030381A KR1019960054786A KR19960054786A KR970030381A KR 970030381 A KR970030381 A KR 970030381A KR 1019960054786 A KR1019960054786 A KR 1019960054786A KR 19960054786 A KR19960054786 A KR 19960054786A KR 970030381 A KR970030381 A KR 970030381A
Authority
KR
South Korea
Prior art keywords
layer
titanium
nitride
aluminum
sputtering
Prior art date
Application number
KR1019960054786A
Other languages
English (en)
Inventor
푸 지안밍
주 젱
Original Assignee
제임스 조셉 드롱
어플라이드 머티어리얼스. 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제임스 조셉 드롱, 어플라이드 머티어리얼스. 인코포레이티드 filed Critical 제임스 조셉 드롱
Publication of KR970030381A publication Critical patent/KR970030381A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

알루미늄 접촉 형성을 위한 공정으로써 다음과 같은 순서가 포함된다. 첫번째 티타니움층을 반도체 기판 접촉 개구부에 스퍼터링하여 부착, 그위에 박막의 산화티타니움층을 형성, 질소화물 티타니움층을 스퍼터링하여 부착, 알곤 플라수마 처리로 질소화물 티타니움층을 평탄하게 만들고, 처리된 질소화물 티타니움층 위에 알루미늄 접촉을 스퍼터링으로 부착시킨다. 알곤 플라스마 처리로써 질소화물 티타니움층을 평탄하게 하여, 그의 층과 알루미늄과의 접착성을 향상시킨다.

Description

알루미늄 접촉 형성을 위한 개선된 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도1은 상기한 공정을 진행하는 스퍼터링 챔버의 약도이다.

Claims (4)

  1. 본 발명 공정에 따른 알루미늄 접촉 형성의 순서적인 단계는 아래와 같다.
    가). 다수의 개구부가 존재하는 반도체 기판위에 스퍼터링 공정에 의해 티타니움 층을 부착시켜서,
    나). 티타니움층 위에 산소가 포함된 층을 형성한다.
    다). 산화 티타니움 층위에 스퍼터링 공정에 의해 질소화물 티타니움(TiN) 층을 형성한다.
    라). TiN 층을 알곤 플라스마로 처리한다.
    마). 플라스마 처리된 TiN층 위에 스퍼터링 공정으로 알리미늄을 층을 부착시킨다.
  2. 제1항에 있어서 라) 공정 단계에서 기판 받침대에 RF 전원을 연결하여 기판에 자기바이어스를 유도한다.
  3. 제1항에 있어서 가)에서 부터 라)까지 같은 스퍼터링 챔버내에서 공정이 이루어진다.
  4. 제3항에 있어서 마)는 두번째 스퍼터링 챔버에서 공정이 이루어진다.
KR1019960054786A 1995-11-27 1996-11-18 알루미늄 접촉 형성을 위한 개선된 방법 KR970030381A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/563,167 1995-11-27
US08/563,167 US5685960A (en) 1995-11-27 1995-11-27 Method for forming aluminum contacts

Publications (1)

Publication Number Publication Date
KR970030381A true KR970030381A (ko) 1997-06-26

Family

ID=24249376

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960054786A KR970030381A (ko) 1995-11-27 1996-11-18 알루미늄 접촉 형성을 위한 개선된 방법

Country Status (5)

Country Link
US (2) US5685960A (ko)
EP (1) EP0776033A3 (ko)
JP (1) JPH09181179A (ko)
KR (1) KR970030381A (ko)
TW (1) TW352454B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724143B1 (ko) * 2001-01-17 2007-06-04 매그나칩 반도체 유한회사 반도체장치의 배리어층 형성방법

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0144956B1 (ko) * 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
GB2319532B (en) * 1996-11-22 2001-01-31 Trikon Equip Ltd Method and apparatus for treating a semiconductor wafer
GB2319533B (en) 1996-11-22 2001-06-06 Trikon Equip Ltd Methods of forming a barrier layer
CA2191260A1 (en) * 1996-11-26 1998-05-26 Luc Ouellet Stabilization of the interface between tin and a1 alloys
JPH10168565A (ja) * 1996-12-13 1998-06-23 Mitsubishi Electric Corp イオン化ｐｖｄ装置および半導体装置の製造方法
AUPP702498A0 (en) * 1998-11-09 1998-12-03 Silverbrook Research Pty Ltd Image creation method and apparatus (ART77)
US6130155A (en) * 1999-07-02 2000-10-10 Promos Technologies, Inc. Method of forming metal lines in an integrated circuit having reduced reaction with an anti-reflection coating
US6207483B1 (en) 2000-03-17 2001-03-27 Taiwan Semiconductor Manufacturing Company Method for smoothing polysilicon gate structures in CMOS devices
US6455421B1 (en) * 2000-07-31 2002-09-24 Applied Materials, Inc. Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
US6750156B2 (en) 2001-10-24 2004-06-15 Applied Materials, Inc. Method and apparatus for forming an anti-reflective coating on a substrate
US20040164291A1 (en) * 2002-12-18 2004-08-26 Xingwu Wang Nanoelectrical compositions
US6855647B2 (en) * 2003-04-02 2005-02-15 Hewlett-Packard Development Company, L.P. Custom electrodes for molecular memory and logic devices
JP3555660B1 (ja) * 2004-02-02 2004-08-18 セイコーエプソン株式会社 装飾品、装飾品の製造方法および時計
US20060105016A1 (en) * 2004-11-12 2006-05-18 Gray Robert W Device compatible with magnetic resonance imaging
US9194036B2 (en) * 2007-09-06 2015-11-24 Infineon Technologies Ag Plasma vapor deposition
JP5144585B2 (ja) 2009-05-08 2013-02-13 住友電気工業株式会社 半導体装置およびその製造方法
JP5780509B2 (ja) * 2010-12-22 2015-09-16 株式会社アルバック バリア層の形成方法
JP5634289B2 (ja) * 2011-02-08 2014-12-03 株式会社アルバック 真空処理方法
SG10201607880PA (en) 2015-09-25 2017-04-27 Tokyo Electron Ltd METHOD FOR FORMING TiON FILM
JP6775322B2 (ja) * 2015-09-25 2020-10-28 東京エレクトロン株式会社 ＴｉＯＮ膜の成膜方法
US11664229B2 (en) * 2020-09-24 2023-05-30 Applied Materials, Inc. Nitride capping of titanium material to improve barrier properties

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291124A (ja) * 1989-04-28 1990-11-30 Fujitsu Ltd 半導体装置の製造方法
JPH04280425A (ja) * 1991-03-07 1992-10-06 Sony Corp 配線形成方法
US5378660A (en) * 1993-02-12 1995-01-03 Applied Materials, Inc. Barrier layers and aluminum contacts
JP3240725B2 (ja) * 1993-02-15 2001-12-25 ソニー株式会社 配線構造とその製法
US5427666A (en) * 1993-09-09 1995-06-27 Applied Materials, Inc. Method for in-situ cleaning a Ti target in a Ti + TiN coating process
JP2560626B2 (ja) * 1993-11-10 1996-12-04 日本電気株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724143B1 (ko) * 2001-01-17 2007-06-04 매그나칩 반도체 유한회사 반도체장치의 배리어층 형성방법

Also Published As

Publication number Publication date
EP0776033A3 (en) 1998-04-15
US5685960A (en) 1997-11-11
EP0776033A2 (en) 1997-05-28
TW352454B (en) 1999-02-11
US5851364A (en) 1998-12-22
JPH09181179A (ja) 1997-07-11

Similar Documents

Publication Publication Date Title
KR970030381A (ko) 알루미늄 접촉 형성을 위한 개선된 방법
KR960023223A (ko) 실리콘 이동을 감소시키기 위한 질화 금속막의 처리방법
KR970003544A (ko) 개선된 티타늄 함유 방지층을 형성하기 위한 공정
SG145523A1 (en) Darc layer for min process integration
EP0822584A3 (en) Method of surface treatment of semiconductor substrates
KR970003431A (ko) 개선된 질화 티타늄 함유 방지층을 형성하기 위한 연속적인 방법
KR880010479A (ko) 티타늄/질화티타늄 이중층을 제조하는 방법
KR970030369A (ko) 매립매선 형성방법
CA2365902A1 (en) Method for increasing the yield in processes of deposition of thin layers onto a substrate
KR970003543A (ko) 텅스텐 증착용 개선된 접착층
US5382471A (en) Adherent metal coating for aluminum nitride surfaces
KR960035843A (ko) 반도체 소자의 금속 배선 형성방법
KR920006533A (ko) 증착된 박막의 장벽성을 개선하기 위한 플라즈마 어닐링 방법
KR970018001A (ko) 반도체 장치 내의 화학 증기 증착 알루미늄층의 제작 공정
US5770467A (en) Method for forming electrode on diamond for electronic devices
EP0798771A3 (en) Silicon wafer comprising an amorphous silicon layer and method of manufacturing the same by plasma enhanced chemical vapor deposition (PECVD)
KR970072050A (ko) 챔버를 갖는 스퍼터 장치를 이용한 박막형성방법
JPH0236549A (ja) 薄膜デバイス
KR20000029581A (ko) 귀금속층을가진반도체소자와그제조방법
JPH05243180A (ja) 半導体装置の製造方法
JPS6477121A (en) Formation of wiring of semiconductor device
JPS61127858A (ja) 金色外装部品
JPH05129227A (ja) 半導体装置の製造方法
WO2002047158A3 (en) Ionized metal plasma deposition process having enhanced via sidewall coverage
JPH097950A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application