JPS6477121A - Formation of wiring of semiconductor device - Google Patents
Formation of wiring of semiconductor deviceInfo
- Publication number
- JPS6477121A JPS6477121A JP23247987A JP23247987A JPS6477121A JP S6477121 A JPS6477121 A JP S6477121A JP 23247987 A JP23247987 A JP 23247987A JP 23247987 A JP23247987 A JP 23247987A JP S6477121 A JPS6477121 A JP S6477121A
- Authority
- JP
- Japan
- Prior art keywords
- barrier layer
- gas
- tin
- sin
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To provide a two phase TiN+SiN barrier layer with stable contact characteristics without counteracting the barrier effect by heat-treatment by a method wherein said barrier layer is formed by reactive sputtering process of titanium using nitrogen gas or nitride compound gas and a silicon compound gas as reactive gas. CONSTITUTION:Argon gas, nitrogen gas and monosilane gas are fed to a vacuum chamber 23 at 1% flow rate of (Ar+N2) subjected to Ar/N2=1:1. A titanium target 24 is impressed with DC voltage to perform sputtering process while the sputtered titanium is nitrogenized into TiN to adhere to a silicon substrate 25 with an insulating film 4 wherein a contact window is made. Simultaneously, SiN is produced by reaction to be separated in the TiN grain field. After forming a (TiN+SiN) barrier layer 3 in specified thickness, an Al layer 2 in specified thickness is formed on the barrier layer 3 by evaporation etc. Later, the Al layer 2 and the barrier layer 3 are selectively etched away to form specified pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23247987A JPS6477121A (en) | 1987-09-18 | 1987-09-18 | Formation of wiring of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23247987A JPS6477121A (en) | 1987-09-18 | 1987-09-18 | Formation of wiring of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6477121A true JPS6477121A (en) | 1989-03-23 |
Family
ID=16939949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23247987A Pending JPS6477121A (en) | 1987-09-18 | 1987-09-18 | Formation of wiring of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6477121A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6278150B1 (en) | 1996-09-05 | 2001-08-21 | Mitsubishi Denki Kabushiki Kaisha | Conductive layer connecting structure and method of manufacturing the same |
| CN111304596A (en) * | 2020-04-24 | 2020-06-19 | 宁波招宝磁业有限公司 | Preparation method of anticorrosive coating on surface of neodymium-iron-boron magnet |
| CN111441017A (en) * | 2020-04-24 | 2020-07-24 | 宁波招宝磁业有限公司 | Method for preparing anticorrosive coating on surface of neodymium iron boron magnet |
-
1987
- 1987-09-18 JP JP23247987A patent/JPS6477121A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6278150B1 (en) | 1996-09-05 | 2001-08-21 | Mitsubishi Denki Kabushiki Kaisha | Conductive layer connecting structure and method of manufacturing the same |
| CN111304596A (en) * | 2020-04-24 | 2020-06-19 | 宁波招宝磁业有限公司 | Preparation method of anticorrosive coating on surface of neodymium-iron-boron magnet |
| CN111441017A (en) * | 2020-04-24 | 2020-07-24 | 宁波招宝磁业有限公司 | Method for preparing anticorrosive coating on surface of neodymium iron boron magnet |
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