US4783248A - Method for the production of a titanium/titanium nitride double layer - Google Patents
Method for the production of a titanium/titanium nitride double layer Download PDFInfo
- Publication number
- US4783248A US4783248A US07/135,043 US13504387A US4783248A US 4783248 A US4783248 A US 4783248A US 13504387 A US13504387 A US 13504387A US 4783248 A US4783248 A US 4783248A
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- US
- United States
- Prior art keywords
- titanium
- titanium nitride
- deposition
- layers
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 27
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 239000010936 titanium Substances 0.000 title claims abstract description 21
- 229910052719 titanium Inorganic materials 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052710 silicon Inorganic materials 0.000 abstract description 16
- 230000004888 barrier function Effects 0.000 abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 9
- 229910021332 silicide Inorganic materials 0.000 abstract description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 3
- 238000011282 treatment Methods 0.000 abstract description 3
- 239000012495 reaction gas Substances 0.000 abstract description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000000637 aluminium metallisation Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- -1 compound titanium nitride Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Definitions
- the present invention relates to a method for the production of double layers composed of titanium and titanium nitride which act as contact and barrier layers between metallizations on an aluminum base and silicon and/or silicide or polysilicide surfaces in VLSI semiconductor circuits.
- the methods involves cathode sputtering from a titanium target with the addition of nitrogen in a one chamber system including a magnetron.
- Nitrides, carbides, and borides of the metals of Groups IVB, VB and VIB of the Periodic Table have been considered as such barrier materials.
- titanium nitride as a diffusion barrier has been investigated in depth in an article by Kanamori appearing in "Thin Solid Films", Volume 136 (1986), pages 195 to 214. It has been shown that the barrier properties are greatly dependent on the manufacturing method, on the system employed, and on the process parameters that are maintained. Reactive sputtering in a nitrogen-containing sputtering atmosphere is a method that is frequently employed. Some properties of the titanium nitride layers that are produced are drastically altered with increasing nitrogen concentration in the sputtering gas with the sputtering power being kept constant and with a constant overall sputtering pressure.
- the color changes from silver to silver-gold, gold, golden brown, and brown-violet-metallic to brown-metallic.
- the sputtering rate suddenly decreases to about one third whereas the conductivity of the titanium nitride layers produced increases by a factor of about 3.
- the point at which this occurs also depends on the overall sputtering pressure and on the sputtering power, and is characterized by the presence of a golden color as well as by a ratio of nitrogen to titanium of 1:1 in the layer.
- this region of "golden stoichiometry” is characterized by a high resistance to diffusion through the titanium nitride layer, thereby apparently providing a material of good barrier properties.
- the mechanical stresses that arise due to this layer are at a maximum. This can result in micro-cracks with subsequent rupture of the barrier.
- the present invention seeks to produce a contact and barrier layer of titanium nitride between an aluminum metallization and silicon crystal surfaces or silicide surfaces and polycide surfaces which satisfies the following requirements:
- the boundary surfaces between the metallization consisting of aluminum/silicon alloy and the silicon regions referred to in requirement (2) must be stable at high current densities and elevated temperatures.
- the contact and barrier layer must not have a negative influence on the overall process, as, for example, by producing some mechanical stresses.
- a high degree of conductivity is provided by employing an aluminum metallization containing about 1% silicon.
- Low contact resistances are obtained by the formation of a titanium silicide contact layer following the deposition of a pure titanium layer.
- both a titanium layer and a titanium nitride layer are deposited a plurality of individual layers in a cyclical process where a temperature treatment is carried out between depositions of the individual layers and the nitrogen constituent in the reaction gas during the deposition of the titanium nitride layer is adjusted higher than required for the stoichiometry of the compound titanium nitride.
- the layer thickness of the individual layers is in the range from 3 to 5 nm, preferably at 4 nm, and the heat treatment between layer depositions is carried out in the range from 250° to 350° C., preferably at 300° C.
- a DC one-chamber sputtering system is employed for the production of the layers, wherein the substrates to be coated are arranged on horizontally rotatable pallets, and the pallets are rotated during the coating, the rotational speed being adjusted such that one revolution corresponds to one cycle of deposition.
- the wafer bending of the silicon crystal wafers having diameters of 100 mm has been found to be less than or equal to 1 micron.
- the wafers treated in this way are possessed of good thermal stability, withstanding a temperature of 500° C. for 30 minutes, and a current/stress load of 1.1 micron contacts in excess of 1200 hours.
- the wafers also have low contact resistances and diode leakage currents.
- the process variables are selected such that a high process reliability is accomplished, with acceptable throughput, using a sputtering power of about 3 kW.
- FIGS. 1 and 2 are cross sections of a layer structure manufactured in accordance with the method of the present invention, FIG. 2 representing an excerpt from FIG. 1;
- FIG. 3 is a plan view of a pallet comprising a sputtering target and a heater provided for the coating.
- reference numeral 1 illustrates a silicon substrate consisting of n + or p + doped shallow regions 2
- reference numeral 3 indicates an insulating layer composed, for example, of SiO 2 which contains the through hole.
- the through hole has a diameter of about 0.9 micron and a depth of 1 micron.
- the substrate wafer 1 should be freed of superficial oxide shortly before coating by brief etching in hydrofluoric acid for about 120 seconds.
- the titanium layer 4 at a layer thickness of about 20 nm is applied to the substrate across the surface in an argon plasma coating process containing at least four and preferably five coats.
- a titanium nitride layer 5 having a layer thickness of 100 nm and composed, for example, of at least 20 and preferably 25 coats is deposited thereon without interruption of the vacuum by adding nitrogen.
- the initial pressure in the sputtering system amounts to at least 7 ⁇ 10 -5 pa before sputtering.
- the sputtering chamber with pallet is brought to a temperature of about 300° C. with infrared radiators as shown in FIG. 3.
- an argon gas flow of 45 to 50 sccm may be employed.
- the gas flow may be adjusted from, for example, a previous value of 47 sccm to 20 to 25 and preferably 21 sccm argon and from 30 to 35, preferably 32 sccm nitrogen.
- the power applied to the titanium target shown in FIG. 3 amounts to about 3 kW.
- the sputtering pressure in the reaction space is about 0.7 pa.
- a metallization level 6 composed, for example, of aluminum/silicon or of an aluminum/silicon/copper alloy is then applied in a known way onto the double layer 4, 5 which has an overall thickness of about 120 nm and is composed of titanium/titanium nitride individually deposited layers as shown in FIG. 2.
- the showing in FIG. 2 constitutes an excerpt from FIG. 1, in the region indicated by the dot-dash lines to illustrate the deposition of the individual sputtered coats, each about 4 nm thick.
- the individual titanium coats are identified with lower case letters and the titanium nitride coats are identified with upper case letters.
- the quality of the titanium nitride deposition can be visually checked after the sputtering process based on the occurrence of a brown-violet-metallic surface.
- the character of the surface can also be monitored by measuring the sheet resistivity (about 16 Ohm/square), and measuring the layer thickness and layer structure of the titanium nitride layer 5 with SEM registrations.
- the layer structure should be columnar.
- a rotatable pallet 7 rotates in the direction of arrow 8 through eight wafer positions, identified by reference numerals 11 through 18.
- a silicon crystal wafer is positioned on each of these positions in every run.
- the target holder comprising a titanium target has been identified at reference numeral 9 and the infrared radiator serving as a heater at reference numeral 10.
- At least one of the 8 substrates, such as substrates 11, 15 is situated under the target 9 and under the heat radiator 10.
- the sputtering process is adjusted such that, with an overall layer thickness of 120 nm, 5 revolutions of the pallet 7 are carried out for the pure titanium coating and 25 revolutions of the pallet are carried out for the titanium nitride coating. Th duration of sputtering for the 8 wafers amounts to 30 seconds for the titanium coating and to 500 seconds for the titanium nitride coating.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3704055 | 1987-02-10 | ||
DE3704055 | 1987-02-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
US4783248A true US4783248A (en) | 1988-11-08 |
Family
ID=6320652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/135,043 Expired - Lifetime US4783248A (en) | 1987-02-10 | 1987-12-18 | Method for the production of a titanium/titanium nitride double layer |
Country Status (7)
Country | Link |
---|---|
US (1) | US4783248A (en) |
EP (1) | EP0280089B1 (en) |
JP (1) | JPH0750699B2 (en) |
KR (1) | KR910009608B1 (en) |
AT (1) | ATE62355T1 (en) |
DE (1) | DE3862213D1 (en) |
HK (1) | HK76392A (en) |
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4976839A (en) * | 1988-07-25 | 1990-12-11 | Fujitsu Limited | Method of forming a barrier layer between a silicon substrate and an aluminum electrode of a semiconductor device |
US5023994A (en) * | 1988-09-29 | 1991-06-18 | Microwave Power, Inc. | Method of manufacturing a microwave intergrated circuit substrate including metal lined via holes |
US5102827A (en) * | 1989-05-31 | 1992-04-07 | At&T Bell Laboratories | Contact metallization of semiconductor integrated-circuit devices |
US5156725A (en) * | 1991-10-17 | 1992-10-20 | The Dow Chemical Company | Method for producing metal carbide or carbonitride coating on ceramic substrate |
US5232522A (en) * | 1991-10-17 | 1993-08-03 | The Dow Chemical Company | Rapid omnidirectional compaction process for producing metal nitride, carbide, or carbonitride coating on ceramic substrate |
US5240880A (en) * | 1992-05-05 | 1993-08-31 | Zilog, Inc. | Ti/TiN/Ti contact metallization |
US5283453A (en) * | 1992-10-02 | 1994-02-01 | International Business Machines Corporation | Trench sidewall structure |
US5401675A (en) * | 1991-04-19 | 1995-03-28 | Lee; Pei-Ing P. | Method of depositing conductors in high aspect ratio apertures using a collimator |
US5427666A (en) * | 1993-09-09 | 1995-06-27 | Applied Materials, Inc. | Method for in-situ cleaning a Ti target in a Ti + TiN coating process |
US5439574A (en) * | 1992-04-09 | 1995-08-08 | Anelva Corporation | Method for successive formation of thin films |
EP0697723A2 (en) | 1994-08-15 | 1996-02-21 | International Business Machines Corporation | A process for metallization of an insulator layer |
US5514257A (en) * | 1993-10-22 | 1996-05-07 | Anelva Corporation | Method for forming Ti-tin laminates |
US5529670A (en) * | 1991-04-19 | 1996-06-25 | International Business Machines Corporation | Method of depositing conductors in high aspect ratio apertures under high temperature conditions |
US5561326A (en) * | 1992-01-08 | 1996-10-01 | Mitsubishi Denki Kabushiki Kaisha | Large scale integrated circuit device |
US5573978A (en) * | 1993-09-15 | 1996-11-12 | Hyundai Electronics Industries Co., Ltd. | Method of forming a metal wire in a semiconductor device |
US5600182A (en) * | 1995-01-24 | 1997-02-04 | Lsi Logic Corporation | Barrier metal technology for tungsten plug interconnection |
US5723362A (en) * | 1995-07-21 | 1998-03-03 | Sony Corporation | Method of forming interconnection |
US5838052A (en) * | 1996-03-07 | 1998-11-17 | Micron Technology, Inc. | Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum |
US5843843A (en) * | 1992-09-07 | 1998-12-01 | Samsung Electronics Co., Ltd. | Method for forming a wiring layer a semiconductor device |
US5883002A (en) * | 1996-08-29 | 1999-03-16 | Winbond Electronics Corp. | Method of forming contact profile by improving TEOS/BPSG selectivity for manufacturing a semiconductor device |
US5889328A (en) * | 1992-02-26 | 1999-03-30 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
US5926734A (en) * | 1997-08-05 | 1999-07-20 | Motorola, Inc. | Semiconductor structure having a titanium barrier layer |
US6031290A (en) * | 1992-12-09 | 2000-02-29 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US6048791A (en) * | 1998-03-31 | 2000-04-11 | Kabushiki Kaisha Toshiba | Semiconductor device with electrode formed of conductive layer consisting of polysilicon layer and metal-silicide layer and its manufacturing method |
US6051490A (en) * | 1991-11-29 | 2000-04-18 | Sony Corporation | Method of forming wirings |
US6268290B1 (en) * | 1991-11-19 | 2001-07-31 | Sony Corporation | Method of forming wirings |
WO2002047158A2 (en) * | 2000-12-06 | 2002-06-13 | Koninklijke Philips Electronics N.V. | Ionized metal plasma deposition process having enhanced via sidewall coverage |
US6410986B1 (en) * | 1998-12-22 | 2002-06-25 | Agere Systems Guardian Corp. | Multi-layered titanium nitride barrier structure |
US6653222B2 (en) * | 1999-08-03 | 2003-11-25 | International Business Machines Corporation | Plasma enhanced liner |
US20040151845A1 (en) * | 2003-02-04 | 2004-08-05 | Tue Nguyen | Nanolayer deposition process |
US20050006682A1 (en) * | 2003-07-10 | 2005-01-13 | Jun-Soo Bae | Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier, and methods for forming the same |
US20100285237A1 (en) * | 2001-09-10 | 2010-11-11 | Tegal Corporation | Nanolayer deposition using bias power treatment |
US9121098B2 (en) | 2003-02-04 | 2015-09-01 | Asm International N.V. | NanoLayer Deposition process for composite films |
CN112144014A (en) * | 2019-06-28 | 2020-12-29 | 陕西航天时代导航设备有限公司 | Method for preparing TiN thick film based on GT35 ball bowl part inner surface |
US11072848B2 (en) * | 2018-03-09 | 2021-07-27 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | High temperature sputtered stoichiometric titanium nitride thin films |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8827541D0 (en) * | 1988-11-25 | 1988-12-29 | Atomic Energy Authority Uk | Multilayer coatings |
US5236868A (en) * | 1990-04-20 | 1993-08-17 | Applied Materials, Inc. | Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system |
EP0478233B1 (en) * | 1990-09-27 | 1996-01-03 | AT&T Corp. | Process for fabricating integrated circuits |
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-
1988
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- 1988-02-04 AT AT88101643T patent/ATE62355T1/en not_active IP Right Cessation
- 1988-02-04 DE DE8888101643T patent/DE3862213D1/en not_active Expired - Lifetime
- 1988-02-08 JP JP63027361A patent/JPH0750699B2/en not_active Expired - Lifetime
- 1988-02-10 KR KR1019880001268A patent/KR910009608B1/en not_active IP Right Cessation
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US4702967A (en) * | 1986-06-16 | 1987-10-27 | Harris Corporation | Multiple-layer, multiple-phase titanium/nitrogen adhesion/diffusion barrier layer structure for gold-base microcircuit interconnection |
Non-Patent Citations (4)
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Iwabuchi et al.-"A Highly Reliable Pure Al Metalization with Low Contact Resistance Utilizing Oxygen-Stuffed TiN Bearier Layer" 1986, Symposium on VLSI Technology, May 1986, pp. 55-56. |
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Kanamori-"Investigation of Reactively Sputtered TiN Films for Diffusion Beariers", Thin Solid Films, 136 (1986) pp. 195-214. |
Cited By (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4976839A (en) * | 1988-07-25 | 1990-12-11 | Fujitsu Limited | Method of forming a barrier layer between a silicon substrate and an aluminum electrode of a semiconductor device |
US5023994A (en) * | 1988-09-29 | 1991-06-18 | Microwave Power, Inc. | Method of manufacturing a microwave intergrated circuit substrate including metal lined via holes |
US5102827A (en) * | 1989-05-31 | 1992-04-07 | At&T Bell Laboratories | Contact metallization of semiconductor integrated-circuit devices |
US5529670A (en) * | 1991-04-19 | 1996-06-25 | International Business Machines Corporation | Method of depositing conductors in high aspect ratio apertures under high temperature conditions |
US5401675A (en) * | 1991-04-19 | 1995-03-28 | Lee; Pei-Ing P. | Method of depositing conductors in high aspect ratio apertures using a collimator |
US5156725A (en) * | 1991-10-17 | 1992-10-20 | The Dow Chemical Company | Method for producing metal carbide or carbonitride coating on ceramic substrate |
US5232522A (en) * | 1991-10-17 | 1993-08-03 | The Dow Chemical Company | Rapid omnidirectional compaction process for producing metal nitride, carbide, or carbonitride coating on ceramic substrate |
US6268290B1 (en) * | 1991-11-19 | 2001-07-31 | Sony Corporation | Method of forming wirings |
US6051490A (en) * | 1991-11-29 | 2000-04-18 | Sony Corporation | Method of forming wirings |
US5561326A (en) * | 1992-01-08 | 1996-10-01 | Mitsubishi Denki Kabushiki Kaisha | Large scale integrated circuit device |
US6323554B1 (en) | 1992-02-26 | 2001-11-27 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD |
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Also Published As
Publication number | Publication date |
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KR910009608B1 (en) | 1991-11-23 |
EP0280089B1 (en) | 1991-04-03 |
EP0280089A1 (en) | 1988-08-31 |
ATE62355T1 (en) | 1991-04-15 |
KR880010479A (en) | 1988-10-10 |
DE3862213D1 (en) | 1991-05-08 |
JPH0750699B2 (en) | 1995-05-31 |
HK76392A (en) | 1992-10-09 |
JPS63202911A (en) | 1988-08-22 |
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