WO2000013207A3 - Method for forming a metal film - Google Patents
Method for forming a metal film Download PDFInfo
- Publication number
- WO2000013207A3 WO2000013207A3 PCT/KR1999/000500 KR9900500W WO0013207A3 WO 2000013207 A3 WO2000013207 A3 WO 2000013207A3 KR 9900500 W KR9900500 W KR 9900500W WO 0013207 A3 WO0013207 A3 WO 0013207A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal film
- forming
- metal layer
- substrate
- gas phase
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 9
- 238000000034 method Methods 0.000 title abstract 2
- 239000003054 catalyst Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A method for forming a metal film for use in semiconductor devices on a substrate. A catalyst metal layer for facilitating formation of a metal film is formed first on a substrate using thermal chemical vapor deposition. Then, at least one source of the metal film is prepared as a gas phase. The metal film is formed on the catalyst metal layer by applying the gas phase source to the catalyst metal layer. According to the present invention, a metal film of uniform thickness can be formed on an uneven substrate surface or on a hole with a high aspect ratio.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980035911A KR100332364B1 (en) | 1998-09-01 | 1998-09-01 | method of forming metal film |
KR1998/35911 | 1998-09-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000013207A2 WO2000013207A2 (en) | 2000-03-09 |
WO2000013207A3 true WO2000013207A3 (en) | 2000-06-02 |
Family
ID=19549197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR1999/000500 WO2000013207A2 (en) | 1998-09-01 | 1999-09-01 | Method for forming a metal film |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100332364B1 (en) |
WO (1) | WO2000013207A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8921205B2 (en) | 2002-08-14 | 2014-12-30 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
US9312131B2 (en) | 2006-06-07 | 2016-04-12 | Asm America, Inc. | Selective epitaxial formation of semiconductive films |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6362099B1 (en) * | 1999-03-09 | 2002-03-26 | Applied Materials, Inc. | Method for enhancing the adhesion of copper deposited by chemical vapor deposition |
US6727169B1 (en) | 1999-10-15 | 2004-04-27 | Asm International, N.V. | Method of making conformal lining layers for damascene metallization |
EP1247292B1 (en) * | 1999-12-15 | 2009-02-04 | Genitech Co., Ltd. | Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst |
WO2001078123A1 (en) * | 2000-04-11 | 2001-10-18 | Genitech Co., Ltd. | Method of forming metal interconnects |
KR100403454B1 (en) * | 2000-06-20 | 2003-11-01 | 주식회사 하이닉스반도체 | Method of forming a metal wiring in a semiconductor device |
US7816236B2 (en) | 2005-02-04 | 2010-10-19 | Asm America Inc. | Selective deposition of silicon-containing films |
US7608549B2 (en) | 2005-03-15 | 2009-10-27 | Asm America, Inc. | Method of forming non-conformal layers |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0448223A2 (en) * | 1990-02-19 | 1991-09-25 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride |
US5150013A (en) * | 1991-05-06 | 1992-09-22 | Motorola, Inc. | Power converter employing a multivibrator-inverter |
-
1998
- 1998-09-01 KR KR1019980035911A patent/KR100332364B1/en active IP Right Grant
-
1999
- 1999-09-01 WO PCT/KR1999/000500 patent/WO2000013207A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0448223A2 (en) * | 1990-02-19 | 1991-09-25 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride |
US5150013A (en) * | 1991-05-06 | 1992-09-22 | Motorola, Inc. | Power converter employing a multivibrator-inverter |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8921205B2 (en) | 2002-08-14 | 2014-12-30 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
US9312131B2 (en) | 2006-06-07 | 2016-04-12 | Asm America, Inc. | Selective epitaxial formation of semiconductive films |
Also Published As
Publication number | Publication date |
---|---|
KR20000018353A (en) | 2000-04-06 |
WO2000013207A2 (en) | 2000-03-09 |
KR100332364B1 (en) | 2002-09-18 |
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