KR920010034A - 교대(alternating)화학반응에 의한 CVD 다이아몬드 - Google Patents

교대(alternating)화학반응에 의한 CVD 다이아몬드 Download PDF

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Publication number
KR920010034A
KR920010034A KR1019910021085A KR910021085A KR920010034A KR 920010034 A KR920010034 A KR 920010034A KR 1019910021085 A KR1019910021085 A KR 1019910021085A KR 910021085 A KR910021085 A KR 910021085A KR 920010034 A KR920010034 A KR 920010034A
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South Korea
Prior art keywords
diamond
gas
substrate
stronger
bonds
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KR1019910021085A
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English (en)
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플톤 플레이처 제임스
리챠드 안토니 토마스
Original Assignee
아더 엠. 킹
제네랄 일렉트릭 캄파니
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Publication of KR920010034A publication Critical patent/KR920010034A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

교대(alternating)화학반응에 의한 CVD 다이아몬드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (8)

  1. 승온에서 다이아몬드 기재를 일반식 CnXm를 갖는 기체[여기서, (a) X 및 Z는 각각 C와 단일결합을 형성하고; (b) X 및 Z는 반응성이어서 ZX 또는 그의 유도체를 형성할 수 있으며; (c) Z-X 결합은 C-X 결합보다 강하고; (d) Z-X결합은 C-Z 결합보다 강하며; n, m, 1 및 p는 정수이며, 1은 또한 0일 수도 있다]와 교대로 접촉시킴 (CnXmC1Zp가 기상으로 반응하지 않을 경우, 이들의 혼합물을 상기 다이아몬드 기재와 접촉시키는데 사용할 수 있다)을 포함하는 화학 증착에 의해 상기 다이아몬드 기재상에 다이아몬드를 성장시키는 방법.
  2. 제1항에 있어서, 상기 승온의 범위가 약 500℃ 내지 1100℃인 방법.
  3. 제1항에 있어서, 상기 기체들이 기상으로 반응할 수 없으며, 이들의 혼합물을 상기 다이아몬드 기재와 접촉시키는데 사용하는 방법.
  4. 제1항에 있어서, CnXm및 C1Zp가 CH4, CF4; CH4, CCl4,;CH4, CBr4; CH4, CI4; CH4, CH3OH; H2, CH3OH; H2, CF4; H2, CCl4; H2, CBr4; H2, CI4, CH4F2; Cl2, CH4;I2, CH4; Br2CH4로 이루어진 그룹중에서 선택되는 방법.
  5. 제1항에 있어서, 운반 기체를 상기 기체들과 함께 사용하는 방법.
  6. 제1항에 있어서, 1이 0이고, Zp가 H2인 방법.
  7. 제1항에 있어서, 상기 기체들을 상기 기재와 교대로 접촉시키는 방법.
  8. 제1항에 있어서, 3가지 이상이 기체들을 상기 기재와 접촉시키는데 사용하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910021085A 1990-11-26 1991-11-25 교대(alternating)화학반응에 의한 CVD 다이아몬드 KR920010034A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61814990A 1990-11-26 1990-11-26
US07/618,149 1990-11-26

Publications (1)

Publication Number Publication Date
KR920010034A true KR920010034A (ko) 1992-06-26

Family

ID=24476514

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910021085A KR920010034A (ko) 1990-11-26 1991-11-25 교대(alternating)화학반응에 의한 CVD 다이아몬드

Country Status (12)

Country Link
US (1) US5302231A (ko)
EP (1) EP0487897B1 (ko)
JP (1) JPH04300288A (ko)
KR (1) KR920010034A (ko)
AT (1) ATE133720T1 (ko)
AU (1) AU644495B2 (ko)
BR (1) BR9105107A (ko)
CA (1) CA2049673A1 (ko)
DE (1) DE69116817T2 (ko)
IE (1) IE914088A1 (ko)
IL (1) IL99998A0 (ko)
ZA (1) ZA918941B (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
US5554415A (en) 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
US5620754A (en) 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
US5731046A (en) 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5897924A (en) * 1995-06-26 1999-04-27 Board Of Trustees Operating Michigan State University Process for depositing adherent diamond thin films
GB2379451B (en) * 2000-06-15 2004-05-05 Element Six Thick single crystal diamond layer method for making it and gemstones produced from the layer
AU2002243646B2 (en) * 2001-01-25 2006-06-22 The Government Of The United States Of America, As Represented By The Secretary, Department Of Health And Human Services Formulation of boronic acid compounds
US7687146B1 (en) 2004-02-11 2010-03-30 Zyvex Labs, Llc Simple tool for positional diamond mechanosynthesis, and its method of manufacture
US9469918B2 (en) 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
DE102014108352A1 (de) * 2014-06-13 2015-12-17 Forschungszentrum Jülich GmbH Verfahren zum Abscheiden einer Kristallschicht bei niedrigen Temperaturen, insbesondere einer photolumineszierenden IV-IV-Schicht auf einem IV-Substrat, sowie ein eine derartige Schicht aufweisendes optoelektronisches Bauelement
DE102018131022A1 (de) 2018-12-05 2020-06-10 Schaeffler Technologies AG & Co. KG Gleitlager und Verfahren zur Herstellung eines Lagerelementes für ein Gleitlager

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
JPS60180999A (ja) * 1984-02-24 1985-09-14 Nec Corp ダイヤモンドの合成方法
JPS63210099A (ja) * 1987-02-26 1988-08-31 Nissin Electric Co Ltd ダイヤモンド膜の作製方法
US4882138A (en) * 1987-03-30 1989-11-21 Crystallume Method for preparation of diamond ceramics
DE3884653T2 (de) * 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
ZA888034B (en) * 1987-12-17 1989-06-28 Gen Electric Diamond growth process
GB8810113D0 (en) * 1988-04-28 1988-06-02 Jones B L Bonded composite
JP2814257B2 (ja) * 1989-02-10 1998-10-22 九州日立マクセル株式会社 電気かみそり
US4981818A (en) * 1990-02-13 1991-01-01 General Electric Company Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors
US5071677A (en) * 1990-05-24 1991-12-10 Houston Advanced Research Center Halogen-assisted chemical vapor deposition of diamond

Also Published As

Publication number Publication date
AU8796291A (en) 1992-05-28
IE914088A1 (en) 1992-06-03
BR9105107A (pt) 1992-07-21
EP0487897B1 (en) 1996-01-31
IL99998A0 (en) 1992-08-18
DE69116817T2 (de) 1996-08-01
US5302231A (en) 1994-04-12
EP0487897A1 (en) 1992-06-03
AU644495B2 (en) 1993-12-09
DE69116817D1 (de) 1996-03-14
ATE133720T1 (de) 1996-02-15
ZA918941B (en) 1992-11-25
CA2049673A1 (en) 1992-05-27
JPH04300288A (ja) 1992-10-23

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