KR880004129A - 유기 금속 화합물 - Google Patents

유기 금속 화합물 Download PDF

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Publication number
KR880004129A
KR880004129A KR870010130A KR870010130A KR880004129A KR 880004129 A KR880004129 A KR 880004129A KR 870010130 A KR870010130 A KR 870010130A KR 870010130 A KR870010130 A KR 870010130A KR 880004129 A KR880004129 A KR 880004129A
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South Korea
Prior art keywords
organometallic compound
group
compound
carbon atoms
substrate
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KR870010130A
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English (en)
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KR950001217B1 (ko
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에르드만 디트리히
엠마누엘 반 게멘 막스
풀 루드비그
슈만 헤르베르트
하르트만 우베
바세르만 빌프리트
헤이엔 마이노
위르겐젠 홀거
Original Assignee
노우만, 헤우만
메르크 파텐트 게젤샤프트 미트 베슈랭크터 하프퉁
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Application filed by 노우만, 헤우만, 메르크 파텐트 게젤샤프트 미트 베슈랭크터 하프퉁 filed Critical 노우만, 헤우만
Publication of KR880004129A publication Critical patent/KR880004129A/ko
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Publication of KR950001217B1 publication Critical patent/KR950001217B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

유기 금속 화합물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 금속을 기재상에 가스상 증착시키는데 있어서의 일반식(Ⅰ)의 유기금속 화합물의 용도.
    상기식에서, M은 알루미늄, 인듐 또는 갈륨이고, X는 -(CHR5)n-(여기에서 n은 2,3,4 또는 5), -2-C6H4-(CH2)m-, -(CH2)m-2-C6H4-2-C6H10-(CH2)m-, -(CH2)m-2-C6H16-(여기에서 m은 1 또는 2)이고, R5는 각기 H 또는 탄소수 1 내지 4의 알킬기이고, Y는 5족의 헤테로원자를 갖는 5- 또는 6-원 헤테로시클릭고리 또는 -NR3R4, -PR3R4, -AsR3R4또는 -SbR3R4이고, R1, R2, R3및 R4는 각기 서로 독립하여 H, 일부 또는 전부가 플루오로화 될 수 있는 직쇄 또는 분지된 알킬기, 각기 탄소수 3 내지 8의 시클로알킬, 알케닐 또는 시클로알케닐기 또는 비치환 또는 치환된 페닐기이다.
  2. 적층을 증착하는데 있어서의 특허청구의 범위 제1항에 따른 유기금속 화합물의 용도.
  3. 유기금속 화합물로부터 금속을 가스상 증착하여 기재상에 박막을 형성시키는 방법에 있어서, 유기 금속 화합물로서 일반식(Ⅰ)의 화합물을 사용함을 특징으로 하는 방법.
    여기에서 R1, R2, M, X 및 Y는 특허청구의 범위 제1항에서 정의한 바와 같다.
  4. 제3항에 있어서, 반도체 화합물이 생성되도록 적용한 반응조건하에서 가스상태의 하나 또는 그 이상의 비소, 안티몬 또는 인 화합물을 증착공정 동안에 공급하는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870010130A 1986-09-16 1987-09-12 박막형성방법 KR950001217B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19863631469 DE3631469A1 (de) 1986-09-16 1986-09-16 Metallorganische verbindungen
DE3631469.2 1986-09-16
DEP3631469.2 1986-09-16

Publications (2)

Publication Number Publication Date
KR880004129A true KR880004129A (ko) 1988-06-01
KR950001217B1 KR950001217B1 (ko) 1995-02-14

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Application Number Title Priority Date Filing Date
KR1019870010130A KR950001217B1 (ko) 1986-09-16 1987-09-12 박막형성방법

Country Status (6)

Country Link
US (2) US4880492A (ko)
EP (1) EP0260534B1 (ko)
JP (1) JP2579169B2 (ko)
KR (1) KR950001217B1 (ko)
DD (1) DD264029A5 (ko)
DE (2) DE3631469A1 (ko)

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Also Published As

Publication number Publication date
US5112432A (en) 1992-05-12
DE3631469A1 (de) 1988-03-17
JPS6383092A (ja) 1988-04-13
EP0260534B1 (de) 1991-12-18
DD264029A5 (de) 1989-01-18
DE3775311D1 (de) 1992-01-30
US4880492A (en) 1989-11-14
KR950001217B1 (ko) 1995-02-14
JP2579169B2 (ja) 1997-02-05
EP0260534A1 (de) 1988-03-23

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