KR900006555A - 기질 표면에 에피텍셜 인화인듐 층을 제조하는 방법 - Google Patents

기질 표면에 에피텍셜 인화인듐 층을 제조하는 방법 Download PDF

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Publication number
KR900006555A
KR900006555A KR1019890014194A KR890014194A KR900006555A KR 900006555 A KR900006555 A KR 900006555A KR 1019890014194 A KR1019890014194 A KR 1019890014194A KR 890014194 A KR890014194 A KR 890014194A KR 900006555 A KR900006555 A KR 900006555A
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KR
South Korea
Prior art keywords
indium
substrate surface
phosphide layer
indium phosphide
producing epitaxial
Prior art date
Application number
KR1019890014194A
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English (en)
Inventor
그라두스 요하네스 스타링 애밀리아누스
Original Assignee
에프. 제이.스미트
엔.브이.필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 에프. 제이.스미트, 엔.브이.필립스 글로아이람펜파브리켄 filed Critical 에프. 제이.스미트
Publication of KR900006555A publication Critical patent/KR900006555A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/49—Nc machine tool, till multiple
    • G05B2219/49013—Deposit layers, cured by scanning laser, stereo lithography SLA, prototyping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

기질 표면에 에피텍셜 인화인듐 층을 제조하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 방법을 수행하기 위한 장치를 개략적으로 나타낸 도면이다.

Claims (4)

  1. 유기금속성 인듐 화합물로서 사이클로펜타디에닐인듐(Ⅰ)(여기서, 사이클로펜타디엔 그룹은 임의로 알킬-치환된다)을 사용함을 특징으로 하여, 유기금속성 인듐 화합물 및 포스핀을 함유하는 기체 혼합물과 가열시킨 기질표면을 접촉시켜 기질 표면에 에피텍셜 인화인듐 층을 제공하는 방법.
  2. 제1항에 있어서, 알킬-치환된 사이클로펜타디에닐 인듐(Ⅰ)의 증기압이 20℃에서 0.01mhar 이상인 방법.
  3. 제2항에 있어서, 알킬 그룹의 탄소원자수가 최대 4인 모노알킬 사이클로펜타디에닐 인듐(Ⅰ)을 사용하는 방법.
  4. 제2항에 있어서, 메틸 사이클로펜타디에닐 인듐(Ⅰ)을 사용하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890014194A 1988-10-07 1989-10-04 기질 표면에 에피텍셜 인화인듐 층을 제조하는 방법 KR900006555A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8802458 1988-10-07
NL8802458A NL8802458A (nl) 1988-10-07 1988-10-07 Werkwijze voor de vervaardiging van een epitaxiale indiumfosfide-laag op een substraatoppervlak.

Publications (1)

Publication Number Publication Date
KR900006555A true KR900006555A (ko) 1990-05-08

Family

ID=19853007

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890014194A KR900006555A (ko) 1988-10-07 1989-10-04 기질 표면에 에피텍셜 인화인듐 층을 제조하는 방법

Country Status (6)

Country Link
US (1) US4965222A (ko)
EP (1) EP0362952B1 (ko)
JP (1) JPH02163930A (ko)
KR (1) KR900006555A (ko)
DE (1) DE68908325T2 (ko)
NL (1) NL8802458A (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0403293B1 (en) * 1989-06-16 1995-12-06 Kabushiki Kaisha Toshiba Method of manufacturing III-V group compound semiconductor device
JPH0388324A (ja) * 1989-08-31 1991-04-12 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の形成方法
US5124278A (en) * 1990-09-21 1992-06-23 Air Products And Chemicals, Inc. Amino replacements for arsine, antimony and phosphine
US5153147A (en) * 1991-02-27 1992-10-06 At&T Bell Laboratories Selective growth of inp in device fabrication
JPH06310438A (ja) * 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
US5410178A (en) * 1994-08-22 1995-04-25 Northwestern University Semiconductor films
JP6777933B2 (ja) * 2016-12-02 2020-10-28 株式会社高純度化学研究所 化学蒸着用原料及びその製造方法、並びに該化学蒸着用原料を用いて形成されるインジウムを含有する酸化物の膜の製造方法
KR102367495B1 (ko) 2017-06-09 2022-02-23 가부시키가이샤 고준도가가쿠 겐큐쇼 화학 증착용 원료, 및, 화학 증착용 원료가 들어간 차광 용기 및 그 제조 방법
JP7240903B2 (ja) * 2019-03-05 2023-03-16 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード インジウム化合物および該インジウム化合物を用いたインジウム含有膜の成膜方法
US11859283B2 (en) * 2020-07-28 2024-01-02 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Heteroalkylcyclopentadienyl indium-containing precursors and processes of using the same for deposition of indium-containing layers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052979B1 (en) * 1980-11-18 1985-09-18 BRITISH TELECOMMUNICATIONS public limited company Improvements in the manufacture of group iiib-vb compounds
US4764439A (en) * 1982-12-20 1988-08-16 Sera Solar Corporation Photoelectrochemical cell
US4716130A (en) * 1984-04-26 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories MOCVD of semi-insulating indium phosphide based compositions
JPS60245214A (ja) * 1984-05-21 1985-12-05 Toshiba Corp 化合物半導体結晶の気相成長方法
US4734514A (en) * 1984-10-25 1988-03-29 Morton Thiokol, Inc. Hydrocarbon-substituted analogs of phosphine and arsine, particularly for metal organic chemical vapor deposition
US4720560A (en) * 1984-10-25 1988-01-19 Morton Thiokol, Inc. Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition
US4801439A (en) * 1986-09-15 1989-01-31 Sri International Catalytic process for making compounds having a non-Lewis acid/base bond between a group IIIA metal and group VA nonmetal
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
US4847399A (en) * 1987-01-23 1989-07-11 Morton Thiokol, Inc. Process for preparing or purifying Group III-A organometallic compounds
US4981979A (en) * 1987-09-10 1991-01-01 Neorx Corporation Immunoconjugates joined by thioether bonds having reduced toxicity and improved selectivity
JPH0817160B2 (ja) * 1987-10-06 1996-02-21 昭和電工株式会社 気相成長方法
JPH0269389A (ja) * 1988-08-31 1990-03-08 Toyo Stauffer Chem Co 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法

Also Published As

Publication number Publication date
EP0362952A1 (en) 1990-04-11
EP0362952B1 (en) 1993-08-11
DE68908325D1 (de) 1993-09-16
NL8802458A (nl) 1990-05-01
US4965222A (en) 1990-10-23
DE68908325T2 (de) 1994-02-24
JPH02163930A (ja) 1990-06-25

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