ES2031098T3 - Procedimiento y dispositivo para la configuracion de una capa mediante proceso quimico de plasma. - Google Patents

Procedimiento y dispositivo para la configuracion de una capa mediante proceso quimico de plasma.

Info

Publication number
ES2031098T3
ES2031098T3 ES198787112323T ES87112323T ES2031098T3 ES 2031098 T3 ES2031098 T3 ES 2031098T3 ES 198787112323 T ES198787112323 T ES 198787112323T ES 87112323 T ES87112323 T ES 87112323T ES 2031098 T3 ES2031098 T3 ES 2031098T3
Authority
ES
Spain
Prior art keywords
procedure
layer
configuration
plasma process
chemical plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198787112323T
Other languages
English (en)
Inventor
Hilmar Von Campe
Dietmar Liedtke
Berthold Schum
Jorg Worner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nukem GmbH
Original Assignee
Nukem GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nukem GmbH filed Critical Nukem GmbH
Application granted granted Critical
Publication of ES2031098T3 publication Critical patent/ES2031098T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

SE PROPONE UN PROCEDIMIENTO Y UN DISPOSITIVO PARA FORMACION DE UNA CAPA DE UNA SUPERFICIE DE UN SUSTRATO MEDIANTE PROCESO PLASMAQUIMICO. CON ELLO SE DIRIGE LA SUPERFICIE PARALELAMENTE AL CAMPO ELECTRICO QUE SE NECESITA PARA EL PROCESO PLASMAQUIMICO. ADEMAS EL GAS NECESARIO CORRE INMEDIATAMENTE SOBRE LA SUPERFICIE.
ES198787112323T 1986-08-27 1987-08-25 Procedimiento y dispositivo para la configuracion de una capa mediante proceso quimico de plasma. Expired - Lifetime ES2031098T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3629000A DE3629000C1 (de) 1986-08-27 1986-08-27 Verfahren und Vorrichtung zum Ausbilden einer Schicht durch plasmachemischen Prozess

Publications (1)

Publication Number Publication Date
ES2031098T3 true ES2031098T3 (es) 1992-12-01

Family

ID=6308218

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198787112323T Expired - Lifetime ES2031098T3 (es) 1986-08-27 1987-08-25 Procedimiento y dispositivo para la configuracion de una capa mediante proceso quimico de plasma.

Country Status (5)

Country Link
US (1) US4915978A (es)
EP (1) EP0257620B1 (es)
JP (1) JPS6369981A (es)
DE (2) DE3629000C1 (es)
ES (1) ES2031098T3 (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2060917A1 (en) * 1991-03-12 1992-09-13 Milam Pender Plasma enhanced chemical vapor deposition device
US7264850B1 (en) 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US5430355A (en) * 1993-07-30 1995-07-04 Texas Instruments Incorporated RF induction plasma source for plasma processing
JP3513206B2 (ja) * 1994-03-22 2004-03-31 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US6042686A (en) * 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
EP1480250A1 (en) 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
US9202674B2 (en) * 2008-10-21 2015-12-01 Applied Materials, Inc. Plasma reactor with a ceiling electrode supply conduit having a succession of voltage drop elements
PT106302A (pt) 2012-05-09 2013-11-11 Inst Superior Tecnico Revestimentos híbridos para otimização da proteção anti-corrosiva de ligas de magnésio

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3677799A (en) * 1970-11-10 1972-07-18 Celanese Corp Vapor phase boron deposition by pulse discharge
US3996884A (en) * 1973-09-14 1976-12-14 Susumu Industrial Co., Ltd. Device for processing an organic high molecular weight film
JPS60108B2 (ja) * 1974-07-10 1985-01-05 太平洋セメント株式会社 放電塗装装置
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
JPS6029295B2 (ja) * 1979-08-16 1985-07-10 舜平 山崎 非単結晶被膜形成法
US4262035A (en) * 1980-03-07 1981-04-14 Bell Telephone Laboratories, Incorporated Modified chemical vapor deposition of an optical fiber using an rf plasma
US4399014A (en) * 1980-05-03 1983-08-16 Engle Frank W Plasma reactor and method therefor
DE3020815A1 (de) * 1980-06-02 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zur herstellung von duennen schichten auf substraten durch chemische umwandlung von gasen
US4438153A (en) * 1981-02-24 1984-03-20 Welbilt Electronics Die Corporation Method of and apparatus for the vapor deposition of material upon a substrate
US4402993A (en) * 1981-03-20 1983-09-06 Gulf & Western Manufacturing Company Process for coating optical fibers
US4438188A (en) * 1981-06-15 1984-03-20 Fuji Electric Company, Ltd. Method for producing photosensitive film for electrophotography
US4569719A (en) * 1981-07-17 1986-02-11 Plasma Physics Corporation Glow discharge method and apparatus and photoreceptor devices made therewith
JPS59193265A (ja) * 1983-03-14 1984-11-01 Stanley Electric Co Ltd プラズマｃｖｄ装置
US4500565A (en) * 1983-09-28 1985-02-19 Ushio Denki Kabushiki Kaisha Deposition process
US4593644A (en) * 1983-10-26 1986-06-10 Rca Corporation Continuous in-line deposition system
DE3574997D1 (de) * 1984-03-03 1990-02-01 Stc Plc Pulsierendes plasmaverfahren.
US4618477A (en) * 1985-01-17 1986-10-21 International Business Machines Corporation Uniform plasma for drill smear removal reactor
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
KR880000215A (ko) * 1986-06-10 1988-03-24 나까므라 히사오 시이트(sheet)상 물체의 플라즈마 처리장치

Also Published As

Publication number Publication date
DE3778794D1 (de) 1992-06-11
US4915978A (en) 1990-04-10
EP0257620A3 (en) 1989-08-09
EP0257620B1 (de) 1992-05-06
DE3629000C1 (de) 1987-10-29
JPS6369981A (ja) 1988-03-30
EP0257620A2 (de) 1988-03-02

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