IT7927119A0 - Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori. - Google Patents
Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori.Info
- Publication number
- IT7927119A0 IT7927119A0 IT7927119A IT2711979A IT7927119A0 IT 7927119 A0 IT7927119 A0 IT 7927119A0 IT 7927119 A IT7927119 A IT 7927119A IT 2711979 A IT2711979 A IT 2711979A IT 7927119 A0 IT7927119 A0 IT 7927119A0
- Authority
- IT
- Italy
- Prior art keywords
- metallization
- semiconductor devices
- related apparatus
- semiconductor
- devices
- Prior art date
Links
- 238000001465 metallisation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7843914A GB2041983B (en) | 1978-11-09 | 1978-11-09 | Metallising semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7927119A0 true IT7927119A0 (it) | 1979-11-08 |
IT1193328B IT1193328B (it) | 1988-06-15 |
Family
ID=10500922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT27119/79A IT1193328B (it) | 1978-11-09 | 1979-11-08 | Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5567135A (it) |
DE (1) | DE2944500A1 (it) |
FR (1) | FR2441271A1 (it) |
GB (1) | GB2041983B (it) |
IT (1) | IT1193328B (it) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3040693A1 (de) * | 1979-11-08 | 1981-05-27 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zur metallisierung von halbleiterbauelementen |
JPS5948952B2 (ja) * | 1981-03-23 | 1984-11-29 | 富士通株式会社 | 金属薄膜の形成方法 |
US4488506A (en) * | 1981-06-18 | 1984-12-18 | Itt Industries, Inc. | Metallization plant |
JPS61245523A (ja) * | 1985-04-23 | 1986-10-31 | Fujitsu Ltd | アルミニウム膜の成長方法 |
EP0221156B1 (en) * | 1985-05-03 | 1989-10-11 | AT&T Corp. | Method of making a device comprising a patterned aluminum layer |
US4886683A (en) * | 1986-06-20 | 1989-12-12 | Raytheon Company | Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials |
DE3783405T2 (de) * | 1986-08-19 | 1993-08-05 | Fujitsu Ltd | Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben. |
JPS6324070A (ja) * | 1987-04-24 | 1988-02-01 | Semiconductor Energy Lab Co Ltd | アルミニユ−ム被膜の作製方法 |
JPH01198475A (ja) * | 1988-02-02 | 1989-08-10 | Anelva Corp | 薄膜作製方法 |
GB2213836B (en) * | 1987-12-18 | 1992-08-26 | Gen Electric Co Plc | Vacuum deposition process |
JP2544185B2 (ja) * | 1988-08-09 | 1996-10-16 | アネルバ株式会社 | 薄膜作製装置および方法 |
JP2781219B2 (ja) * | 1989-09-09 | 1998-07-30 | キヤノン株式会社 | 堆積膜形成法 |
JP2781220B2 (ja) * | 1989-09-09 | 1998-07-30 | キヤノン株式会社 | 堆積膜形成法 |
JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
JP2801285B2 (ja) * | 1989-09-26 | 1998-09-21 | キヤノン株式会社 | 堆積膜形成法 |
JP2721020B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
JP2721021B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
EP0498580A1 (en) * | 1991-02-04 | 1992-08-12 | Canon Kabushiki Kaisha | Method for depositing a metal film containing aluminium by use of alkylaluminium halide |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1122171B (de) * | 1955-11-10 | 1962-01-18 | Robert Mueller | Verfahren zur Herstellung elektrischer Kondensatoren, die aus einem Isolationsmaterial mit darauf haftenden, duennen Aluminiumbelaegen bestehen |
GB1070396A (en) * | 1964-08-05 | 1967-06-01 | Union Carbide Corp Linde Divis | Method of depositing metal coatings in holes, tubes, cracks, fissures and the like |
US3449150A (en) * | 1965-03-31 | 1969-06-10 | Continental Oil Co | Coating surfaces with aluminum |
US3620837A (en) * | 1968-09-16 | 1971-11-16 | Ibm | Reliability of aluminum and aluminum alloy lands |
DE2151052A1 (de) * | 1970-10-14 | 1972-06-08 | Motorola Inc | Verfahren und Vorrichtung zur Bildung einer Silicium-Aluminium-Schicht auf einem Siliciumtraeger |
US3974003A (en) * | 1975-08-25 | 1976-08-10 | Ibm | Chemical vapor deposition of dielectric films containing Al, N, and Si |
-
1978
- 1978-11-09 GB GB7843914A patent/GB2041983B/en not_active Expired
-
1979
- 1979-11-03 DE DE19792944500 patent/DE2944500A1/de not_active Withdrawn
- 1979-11-08 IT IT27119/79A patent/IT1193328B/it active
- 1979-11-09 JP JP14455379A patent/JPS5567135A/ja active Pending
- 1979-11-09 FR FR7927649A patent/FR2441271A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2441271B1 (it) | 1983-06-17 |
IT1193328B (it) | 1988-06-15 |
GB2041983A (en) | 1980-09-17 |
JPS5567135A (en) | 1980-05-21 |
FR2441271A1 (fr) | 1980-06-06 |
DE2944500A1 (de) | 1980-05-29 |
GB2041983B (en) | 1982-12-01 |
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