BR7908365A - Processo de producao de dispositivo semi-condutor - Google Patents
Processo de producao de dispositivo semi-condutorInfo
- Publication number
- BR7908365A BR7908365A BR7908365A BR7908365A BR7908365A BR 7908365 A BR7908365 A BR 7908365A BR 7908365 A BR7908365 A BR 7908365A BR 7908365 A BR7908365 A BR 7908365A BR 7908365 A BR7908365 A BR 7908365A
- Authority
- BR
- Brazil
- Prior art keywords
- semi
- production process
- conductor device
- device production
- conductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/165—Transmutation doping
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/972,302 US4240844A (en) | 1978-12-22 | 1978-12-22 | Reducing the switching time of semiconductor devices by neutron irradiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR7908365A true BR7908365A (pt) | 1980-08-26 |
Family
ID=25519487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR7908365A BR7908365A (pt) | 1978-12-22 | 1979-12-20 | Processo de producao de dispositivo semi-condutor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4240844A (pt) |
| JP (1) | JPS5588338A (pt) |
| BE (1) | BE880836A (pt) |
| BR (1) | BR7908365A (pt) |
| CA (1) | CA1131368A (pt) |
| DE (1) | DE2951925A1 (pt) |
| FR (1) | FR2445021A1 (pt) |
| GB (1) | GB2038092A (pt) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4328610A (en) * | 1980-04-25 | 1982-05-11 | Burroughs Corporation | Method of reducing alpha-particle induced errors in an integrated circuit |
| US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
| JPS5950531A (ja) * | 1982-09-16 | 1984-03-23 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPS6068621A (ja) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | 半導体装置の製造方法 |
| US4684413A (en) * | 1985-10-07 | 1987-08-04 | Rca Corporation | Method for increasing the switching speed of a semiconductor device by neutron irradiation |
| DE3714357C2 (de) * | 1986-04-30 | 1994-02-03 | Toshiba Ceramics Co | Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung |
| DE3639835A1 (de) * | 1986-11-21 | 1987-04-30 | Corneliu Dipl Phys Protop | Verfahren zur herstellung von hochgeschwindigkeitshalbleitern |
| DE59003052D1 (de) * | 1989-05-18 | 1993-11-18 | Asea Brown Boveri | Halbleiterbauelement. |
| US5784424A (en) * | 1994-09-30 | 1998-07-21 | The United States Of America As Represented By The United States Department Of Energy | System for studying a sample of material using a heavy ion induced mass spectrometer source |
| US9378955B2 (en) | 2011-08-25 | 2016-06-28 | Aeroflex Colorado Springs Inc. | Wafer structure for electronic integrated circuit manufacturing |
| US9396947B2 (en) | 2011-08-25 | 2016-07-19 | Aeroflex Colorado Springs Inc. | Wafer structure for electronic integrated circuit manufacturing |
| US9378956B2 (en) | 2011-08-25 | 2016-06-28 | Aeroflex Colorado Springs Inc. | Wafer structure for electronic integrated circuit manufacturing |
| EP2748845A4 (en) * | 2011-08-25 | 2015-07-08 | Aeroflex Colorado Springs Inc | WAFER STRUCTURE FOR THE MANUFACTURE OF ELECTRONIC INTEGRATED CIRCUITS |
| US9312133B2 (en) | 2011-08-25 | 2016-04-12 | Aeroflex Colorado Springs Inc. | Wafer structure for electronic integrated circuit manufacturing |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1948884B2 (de) * | 1969-09-27 | 1971-09-30 | Verfahren zum beseitigen von inversionsschichten | |
| US3769693A (en) * | 1971-07-16 | 1973-11-06 | Martin Marietta Corp | Process for preparing nuclear hardened semiconductor and microelectronic devices |
| US3840887A (en) * | 1972-08-25 | 1974-10-08 | Westinghouse Electric Corp | Selective irradiation of gated semiconductor devices to control gate sensitivity |
| US3872493A (en) * | 1972-08-25 | 1975-03-18 | Westinghouse Electric Corp | Selective irradiation of junctioned semiconductor devices |
| US3852612A (en) * | 1972-08-31 | 1974-12-03 | Westinghouse Electric Corp | Selective low level irradiation to improve blocking voltage yield of junctioned semiconductors |
| US3881963A (en) * | 1973-01-18 | 1975-05-06 | Westinghouse Electric Corp | Irradiation for fast switching thyristors |
| US3881964A (en) * | 1973-03-05 | 1975-05-06 | Westinghouse Electric Corp | Annealing to control gate sensitivity of gated semiconductor devices |
| US3888701A (en) * | 1973-03-09 | 1975-06-10 | Westinghouse Electric Corp | Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing |
| US3809582A (en) * | 1973-03-08 | 1974-05-07 | Westinghouse Electric Corp | Irradiation for fast recovery of high power junction diodes |
| US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
| US3877997A (en) * | 1973-03-20 | 1975-04-15 | Westinghouse Electric Corp | Selective irradiation for fast switching thyristor with low forward voltage drop |
| US4056408A (en) * | 1976-03-17 | 1977-11-01 | Westinghouse Electric Corporation | Reducing the switching time of semiconductor devices by nuclear irradiation |
| US4076555A (en) * | 1976-05-17 | 1978-02-28 | Westinghouse Electric Corporation | Irradiation for rapid turn-off reverse blocking diode thyristor |
| US4135951A (en) * | 1977-06-13 | 1979-01-23 | Monsanto Company | Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials |
-
1978
- 1978-12-22 US US05/972,302 patent/US4240844A/en not_active Expired - Lifetime
-
1979
- 1979-12-13 CA CA341,867A patent/CA1131368A/en not_active Expired
- 1979-12-20 FR FR7931303A patent/FR2445021A1/fr not_active Withdrawn
- 1979-12-20 BR BR7908365A patent/BR7908365A/pt unknown
- 1979-12-21 JP JP16581479A patent/JPS5588338A/ja active Pending
- 1979-12-21 DE DE19792951925 patent/DE2951925A1/de not_active Withdrawn
- 1979-12-21 GB GB7944034A patent/GB2038092A/en not_active Withdrawn
- 1979-12-21 BE BE0/198730A patent/BE880836A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA1131368A (en) | 1982-09-07 |
| DE2951925A1 (de) | 1980-07-10 |
| GB2038092A (en) | 1980-07-16 |
| FR2445021A1 (fr) | 1980-07-18 |
| BE880836A (fr) | 1980-06-23 |
| JPS5588338A (en) | 1980-07-04 |
| US4240844A (en) | 1980-12-23 |
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