IT1158723B - Processo di fabbricazione di dispositivi semiconduttori - Google Patents

Processo di fabbricazione di dispositivi semiconduttori

Info

Publication number
IT1158723B
IT1158723B IT23833/78A IT2383378A IT1158723B IT 1158723 B IT1158723 B IT 1158723B IT 23833/78 A IT23833/78 A IT 23833/78A IT 2383378 A IT2383378 A IT 2383378A IT 1158723 B IT1158723 B IT 1158723B
Authority
IT
Italy
Prior art keywords
manufacturing process
semiconductor devices
devices manufacturing
semiconductor
manufacturing
Prior art date
Application number
IT23833/78A
Other languages
English (en)
Other versions
IT7823833A0 (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7823833A0 publication Critical patent/IT7823833A0/it
Application granted granted Critical
Publication of IT1158723B publication Critical patent/IT1158723B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/966—Selective oxidation of ion-amorphousized layer
IT23833/78A 1977-06-03 1978-05-26 Processo di fabbricazione di dispositivi semiconduttori IT1158723B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/803,182 US4098618A (en) 1977-06-03 1977-06-03 Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation

Publications (2)

Publication Number Publication Date
IT7823833A0 IT7823833A0 (it) 1978-05-26
IT1158723B true IT1158723B (it) 1987-02-25

Family

ID=25185809

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23833/78A IT1158723B (it) 1977-06-03 1978-05-26 Processo di fabbricazione di dispositivi semiconduttori

Country Status (6)

Country Link
US (1) US4098618A (it)
EP (1) EP0000316B1 (it)
JP (1) JPS542671A (it)
CA (1) CA1088217A (it)
DE (1) DE2860635D1 (it)
IT (1) IT1158723B (it)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178191A (en) * 1978-08-10 1979-12-11 Rca Corp. Process of making a planar MOS silicon-on-insulating substrate device
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
JPS5650532A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device
JPS5734365A (en) * 1980-08-08 1982-02-24 Ibm Symmetrical bipolar transistor
DE3031170A1 (de) * 1980-08-18 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-schaltungen nach dem sogenannten locos-verfahren
JPS57164547A (en) * 1981-04-02 1982-10-09 Toshiba Corp Manufacture of semiconductor device
US4372033A (en) * 1981-09-08 1983-02-08 Ncr Corporation Method of making coplanar MOS IC structures
JPS58114442A (ja) * 1981-12-26 1983-07-07 Fujitsu Ltd 半導体装置の製造方法
US4748134A (en) * 1987-05-26 1988-05-31 Motorola, Inc. Isolation process for semiconductor devices
US4728619A (en) * 1987-06-19 1988-03-01 Motorola, Inc. Field implant process for CMOS using germanium
US5310457A (en) * 1992-09-30 1994-05-10 At&T Bell Laboratories Method of integrated circuit fabrication including selective etching of silicon and silicon compounds
US5330920A (en) * 1993-06-15 1994-07-19 Digital Equipment Corporation Method of controlling gate oxide thickness in the fabrication of semiconductor devices
US5580815A (en) * 1993-08-12 1996-12-03 Motorola Inc. Process for forming field isolation and a structure over a semiconductor substrate
US5869385A (en) * 1995-12-08 1999-02-09 Advanced Micro Devices, Inc. Selectively oxidized field oxide region
US5937310A (en) * 1996-04-29 1999-08-10 Advanced Micro Devices, Inc. Reduced bird's beak field oxidation process using nitrogen implanted into active region
US5882993A (en) 1996-08-19 1999-03-16 Advanced Micro Devices, Inc. Integrated circuit with differing gate oxide thickness and process for making same
US6033943A (en) * 1996-08-23 2000-03-07 Advanced Micro Devices, Inc. Dual gate oxide thickness integrated circuit and process for making same
KR100211547B1 (ko) * 1996-10-29 1999-08-02 김영환 반도체 소자의 필드 산화막 형성방법
US5872376A (en) * 1997-03-06 1999-02-16 Advanced Micro Devices, Inc. Oxide formation technique using thin film silicon deposition
US6025240A (en) * 1997-12-18 2000-02-15 Advanced Micro Devices, Inc. Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices
TW358236B (en) * 1997-12-19 1999-05-11 Nanya Technology Corp Improved local silicon oxidization method in the manufacture of semiconductor isolation
US6015736A (en) * 1997-12-19 2000-01-18 Advanced Micro Devices, Inc. Method and system for gate stack reoxidation control
US6258693B1 (en) 1997-12-23 2001-07-10 Integrated Device Technology, Inc. Ion implantation for scalability of isolation in an integrated circuit
US5962914A (en) * 1998-01-14 1999-10-05 Advanced Micro Devices, Inc. Reduced bird's beak field oxidation process using nitrogen implanted into active region
US5998277A (en) * 1998-03-13 1999-12-07 Texas Instruments - Acer Incorporated Method to form global planarized shallow trench isolation
US6531364B1 (en) 1998-08-05 2003-03-11 Advanced Micro Devices, Inc. Advanced fabrication technique to form ultra thin gate dielectric using a sacrificial polysilicon seed layer
JP3732472B2 (ja) * 2002-10-07 2006-01-05 沖電気工業株式会社 Ｍｏｓトランジスタの製造方法
CN105392837B (zh) * 2013-09-18 2017-06-13 日本瑞翁株式会社 粉体成形用氯乙烯树脂组合物、氯乙烯树脂成形体和层合体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012995B1 (it) * 1970-02-09 1975-05-16
NL7204741A (it) * 1972-04-08 1973-10-10
US3966501A (en) * 1973-03-23 1976-06-29 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
US3961999A (en) * 1975-06-30 1976-06-08 Ibm Corporation Method for forming recessed dielectric isolation with a minimized "bird's beak" problem

Also Published As

Publication number Publication date
US4098618A (en) 1978-07-04
DE2860635D1 (en) 1981-08-06
JPS6141139B2 (it) 1986-09-12
CA1088217A (en) 1980-10-21
IT7823833A0 (it) 1978-05-26
JPS542671A (en) 1979-01-10
EP0000316B1 (fr) 1981-04-29
EP0000316A1 (fr) 1979-01-10

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