EP2748845A4 - Wafer structure for electronic integrated circuit manufacturing - Google Patents

Wafer structure for electronic integrated circuit manufacturing

Info

Publication number
EP2748845A4
EP2748845A4 EP12825755.7A EP12825755A EP2748845A4 EP 2748845 A4 EP2748845 A4 EP 2748845A4 EP 12825755 A EP12825755 A EP 12825755A EP 2748845 A4 EP2748845 A4 EP 2748845A4
Authority
EP
European Patent Office
Prior art keywords
integrated circuit
circuit manufacturing
wafer structure
electronic integrated
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12825755.7A
Other languages
German (de)
French (fr)
Other versions
EP2748845A1 (en
Inventor
David B Kerwin
Joseph M Benedetto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Frontgrade Colorado Springs LLC
Original Assignee
Aeroflex Colorado Springs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/218,292 external-priority patent/US9378956B2/en
Priority claimed from US13/218,352 external-priority patent/US20130049178A1/en
Priority claimed from US13/218,335 external-priority patent/US9312133B2/en
Priority claimed from US13/218,308 external-priority patent/US9396947B2/en
Priority claimed from US13/218,345 external-priority patent/US20130049175A1/en
Priority claimed from US13/218,273 external-priority patent/US9378955B2/en
Application filed by Aeroflex Colorado Springs Inc filed Critical Aeroflex Colorado Springs Inc
Publication of EP2748845A1 publication Critical patent/EP2748845A1/en
Publication of EP2748845A4 publication Critical patent/EP2748845A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • H01L21/187Joining of semiconductor bodies for junction formation by direct bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609Diodes
    • H01L29/66136PN junction diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/868PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
EP12825755.7A 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing Withdrawn EP2748845A4 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13/218,292 US9378956B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,352 US20130049178A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,335 US9312133B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,308 US9396947B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,345 US20130049175A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,273 US9378955B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052302 WO2013028988A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Publications (2)

Publication Number Publication Date
EP2748845A1 EP2748845A1 (en) 2014-07-02
EP2748845A4 true EP2748845A4 (en) 2015-07-08

Family

ID=47746901

Family Applications (6)

Application Number Title Priority Date Filing Date
EP12854047.3A Withdrawn EP2748849A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12825109.7A Withdrawn EP2748844A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12826508.9A Withdrawn EP2748848A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12825755.7A Withdrawn EP2748845A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12825811.8A Withdrawn EP2748846A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12826159.1A Withdrawn EP2748847A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Family Applications Before (3)

Application Number Title Priority Date Filing Date
EP12854047.3A Withdrawn EP2748849A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12825109.7A Withdrawn EP2748844A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12826508.9A Withdrawn EP2748848A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP12825811.8A Withdrawn EP2748846A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12826159.1A Withdrawn EP2748847A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Country Status (2)

Country Link
EP (6) EP2748849A4 (en)
WO (6) WO2013028976A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2996152B1 (en) * 2014-09-15 2017-03-15 ABB Schweiz AG High frequency power diode and method for manufacturing the same
DE102017002935A1 (en) * 2017-03-24 2018-09-27 3-5 Power Electronics GmbH III-V semiconductor diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
DE3435464A1 (en) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Rectifier diode
WO1992009099A1 (en) * 1990-11-14 1992-05-29 Robert Bosch Gmbh Method of manufacturing semiconductor elements, in particular diodes
US20110042576A1 (en) * 2009-08-20 2011-02-24 Icemos Technology Ltd. Direct wafer-bonded through-hole photodiode

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2579979B2 (en) * 1987-02-26 1997-02-12 株式会社東芝 Method for manufacturing semiconductor device
JPH07107935B2 (en) * 1988-02-04 1995-11-15 株式会社東芝 Semiconductor device
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
JPH07263721A (en) * 1994-03-25 1995-10-13 Nippondenso Co Ltd Semiconductor device and manufacture thereof
US5541122A (en) * 1995-04-03 1996-07-30 Motorola Inc. Method of fabricating an insulated-gate bipolar transistor
US6054369A (en) * 1997-06-30 2000-04-25 Intersil Corporation Lifetime control for semiconductor devices
US6027956A (en) * 1998-02-05 2000-02-22 Integration Associates, Inc. Process for producing planar dielectrically isolated high speed pin photodiode
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
US6346460B1 (en) * 1999-03-30 2002-02-12 Seh-America Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
DE60141096D1 (en) * 2000-04-11 2010-03-11 Boeing Co Processing system with majority decision
US7518218B2 (en) * 2005-03-03 2009-04-14 Aeroflex Colorado Springs, Inc. Total ionizing dose suppression transistor architecture
EP1949425A4 (en) * 2005-10-14 2010-08-18 Silicon Space Technology Corp Radiation hardened isolation structures and fabrication methods
DE102005061263B4 (en) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Semiconductor wafer substrate for power semiconductor devices and method of making the same
US7566951B2 (en) * 2006-04-21 2009-07-28 Memc Electronic Materials, Inc. Silicon structures with improved resistance to radiation events
JP5320679B2 (en) * 2007-02-28 2013-10-23 富士電機株式会社 Semiconductor device and manufacturing method thereof
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
KR20090106828A (en) * 2008-04-07 2009-10-12 삼성전자주식회사 Wafer bonding method and bonded wafer structure using the same
US8288798B2 (en) * 2010-02-10 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Step doping in extensions of III-V family semiconductor devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
DE3435464A1 (en) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Rectifier diode
WO1992009099A1 (en) * 1990-11-14 1992-05-29 Robert Bosch Gmbh Method of manufacturing semiconductor elements, in particular diodes
US20110042576A1 (en) * 2009-08-20 2011-02-24 Icemos Technology Ltd. Direct wafer-bonded through-hole photodiode

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
A. OCHOA ET AL: "Latch-Up Control in CMOS Integrated Circuits", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 26, no. 6, 1 December 1979 (1979-12-01), pages 5065 - 5068, XP055191893, ISSN: 0018-9499, DOI: 10.1109/TNS.1979.4330274 *
DUBUC J P ET AL: "Technological parameter and experimental set-up influences on latch-up triggering level in bulk CMOS device", RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1993.,RADECS 93., SECOND EUROPEAN CONFERENCE ON ST. MALO, FRANCE 13-16 SEPT. 1993, NEW YORK, NY, USA,IEEE, 13 September 1993 (1993-09-13), pages 425 - 432, XP010120707, ISBN: 978-0-7803-1793-2 *
SCHUHMACHER H ET AL: "Quasi-monoenergetic neutron beams with energies from 25 to 70 MeV", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A: ACCELERATORS, SPECTROMETERS, DETECTORS, AND ASSOCIATED EQUIPMENT, ELSEVIER BV * NORTH-HOLLAND, NL, vol. 421, no. 1-2, 21 January 1999 (1999-01-21), pages 284 - 295, XP004153421, ISSN: 0168-9002, DOI: 10.1016/S0168-9002(98)01267-4 *
See also references of WO2013028988A1 *

Also Published As

Publication number Publication date
EP2748844A1 (en) 2014-07-02
EP2748847A1 (en) 2014-07-02
WO2013028973A1 (en) 2013-02-28
EP2748846A4 (en) 2015-11-11
WO2013028983A1 (en) 2013-02-28
EP2748844A4 (en) 2015-11-04
WO2013028976A1 (en) 2013-02-28
EP2748849A2 (en) 2014-07-02
EP2748847A4 (en) 2016-06-01
EP2748849A4 (en) 2015-12-16
EP2748846A1 (en) 2014-07-02
EP2748848A4 (en) 2015-06-10
WO2013028986A1 (en) 2013-02-28
WO2013081694A3 (en) 2013-10-24
EP2748845A1 (en) 2014-07-02
WO2013081694A2 (en) 2013-06-06
WO2013028988A1 (en) 2013-02-28
EP2748848A1 (en) 2014-07-02

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