EP2748848A4 - Wafer structure for electronic integrated circuit manufacturing - Google Patents
Wafer structure for electronic integrated circuit manufacturingInfo
- Publication number
- EP2748848A4 EP2748848A4 EP12826508.9A EP12826508A EP2748848A4 EP 2748848 A4 EP2748848 A4 EP 2748848A4 EP 12826508 A EP12826508 A EP 12826508A EP 2748848 A4 EP2748848 A4 EP 2748848A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- integrated circuit
- circuit manufacturing
- wafer structure
- electronic integrated
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/218,335 US9312133B2 (en) | 2011-08-25 | 2011-08-25 | Wafer structure for electronic integrated circuit manufacturing |
US13/218,292 US9378956B2 (en) | 2011-08-25 | 2011-08-25 | Wafer structure for electronic integrated circuit manufacturing |
US13/218,273 US9378955B2 (en) | 2011-08-25 | 2011-08-25 | Wafer structure for electronic integrated circuit manufacturing |
US13/218,308 US9396947B2 (en) | 2011-08-25 | 2011-08-25 | Wafer structure for electronic integrated circuit manufacturing |
US13/218,345 US20130049175A1 (en) | 2011-08-25 | 2011-08-25 | Wafer structure for electronic integrated circuit manufacturing |
US13/218,352 US20130049178A1 (en) | 2011-08-25 | 2011-08-25 | Wafer structure for electronic integrated circuit manufacturing |
PCT/US2012/052269 WO2013028973A1 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2748848A1 EP2748848A1 (en) | 2014-07-02 |
EP2748848A4 true EP2748848A4 (en) | 2015-06-10 |
Family
ID=47746901
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12825755.7A Withdrawn EP2748845A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
EP12826159.1A Withdrawn EP2748847A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
EP12825109.7A Withdrawn EP2748844A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
EP12826508.9A Withdrawn EP2748848A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
EP12854047.3A Withdrawn EP2748849A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
EP12825811.8A Withdrawn EP2748846A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12825755.7A Withdrawn EP2748845A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
EP12826159.1A Withdrawn EP2748847A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
EP12825109.7A Withdrawn EP2748844A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12854047.3A Withdrawn EP2748849A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
EP12825811.8A Withdrawn EP2748846A4 (en) | 2011-08-25 | 2012-08-24 | Wafer structure for electronic integrated circuit manufacturing |
Country Status (2)
Country | Link |
---|---|
EP (6) | EP2748845A4 (en) |
WO (6) | WO2013028986A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2996152B1 (en) | 2014-09-15 | 2017-03-15 | ABB Schweiz AG | High frequency power diode and method for manufacturing the same |
DE102017002935A1 (en) | 2017-03-24 | 2018-09-27 | 3-5 Power Electronics GmbH | III-V semiconductor diode |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0327316A2 (en) * | 1988-02-04 | 1989-08-09 | Kabushiki Kaisha Toshiba | Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other |
EP0405422A1 (en) * | 1989-06-29 | 1991-01-02 | Ixys Corporation | Irradiation and annealing of semiconductor devices for improved device characteristics |
WO1992009099A1 (en) * | 1990-11-14 | 1992-05-29 | Robert Bosch Gmbh | Method of manufacturing semiconductor elements, in particular diodes |
US5466303A (en) * | 1994-03-25 | 1995-11-14 | Nippondenso Co., Ltd. | Semiconductor device and manufacturing method therefor |
EP0889509A2 (en) * | 1997-06-30 | 1999-01-07 | Harris Corporation | Lifetime control for semiconductor devices |
JP2008211148A (en) * | 2007-02-28 | 2008-09-11 | Fuji Electric Device Technology Co Ltd | Semiconductor device and manufacturing method thereof |
US20090185316A1 (en) * | 2008-01-21 | 2009-07-23 | Jens Schneider | ESD/EOS Performance by Introduction of Defects |
US20110042576A1 (en) * | 2009-08-20 | 2011-02-24 | Icemos Technology Ltd. | Direct wafer-bonded through-hole photodiode |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
DE3435464A1 (en) * | 1984-09-27 | 1986-04-10 | Robert Bosch Gmbh, 7000 Stuttgart | Rectifier diode |
JP2579979B2 (en) * | 1987-02-26 | 1997-02-12 | 株式会社東芝 | Method for manufacturing semiconductor device |
US5648288A (en) * | 1992-03-20 | 1997-07-15 | Siliconix Incorporated | Threshold adjustment in field effect semiconductor devices |
US5541122A (en) * | 1995-04-03 | 1996-07-30 | Motorola Inc. | Method of fabricating an insulated-gate bipolar transistor |
US6027956A (en) * | 1998-02-05 | 2000-02-22 | Integration Associates, Inc. | Process for producing planar dielectrically isolated high speed pin photodiode |
US6274892B1 (en) * | 1998-03-09 | 2001-08-14 | Intersil Americas Inc. | Devices formable by low temperature direct bonding |
US6346460B1 (en) * | 1999-03-30 | 2002-02-12 | Seh-America | Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture |
EP1146423B1 (en) * | 2000-04-11 | 2010-01-20 | The Boeing Company | Voted processing system |
US7518218B2 (en) * | 2005-03-03 | 2009-04-14 | Aeroflex Colorado Springs, Inc. | Total ionizing dose suppression transistor architecture |
EP1949425A4 (en) * | 2005-10-14 | 2010-08-18 | Silicon Space Technology Corp | Radiation hardened isolation structures and fabrication methods |
DE102005061263B4 (en) * | 2005-12-20 | 2007-10-11 | Infineon Technologies Austria Ag | Semiconductor wafer substrate for power semiconductor devices and method of making the same |
US7566951B2 (en) * | 2006-04-21 | 2009-07-28 | Memc Electronic Materials, Inc. | Silicon structures with improved resistance to radiation events |
KR20090106828A (en) * | 2008-04-07 | 2009-10-12 | 삼성전자주식회사 | Wafer bonding method and bonded wafer structure using the same |
US8288798B2 (en) * | 2010-02-10 | 2012-10-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Step doping in extensions of III-V family semiconductor devices |
-
2012
- 2012-08-24 EP EP12825755.7A patent/EP2748845A4/en not_active Withdrawn
- 2012-08-24 WO PCT/US2012/052299 patent/WO2013028986A1/en unknown
- 2012-08-24 EP EP12826159.1A patent/EP2748847A4/en not_active Withdrawn
- 2012-08-24 WO PCT/US2012/052280 patent/WO2013028976A1/en unknown
- 2012-08-24 EP EP12825109.7A patent/EP2748844A4/en not_active Withdrawn
- 2012-08-24 WO PCT/US2012/052269 patent/WO2013028973A1/en unknown
- 2012-08-24 EP EP12826508.9A patent/EP2748848A4/en not_active Withdrawn
- 2012-08-24 WO PCT/US2012/052264 patent/WO2013081694A2/en unknown
- 2012-08-24 WO PCT/US2012/052293 patent/WO2013028983A1/en unknown
- 2012-08-24 EP EP12854047.3A patent/EP2748849A4/en not_active Withdrawn
- 2012-08-24 EP EP12825811.8A patent/EP2748846A4/en not_active Withdrawn
- 2012-08-24 WO PCT/US2012/052302 patent/WO2013028988A1/en unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0327316A2 (en) * | 1988-02-04 | 1989-08-09 | Kabushiki Kaisha Toshiba | Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other |
EP0405422A1 (en) * | 1989-06-29 | 1991-01-02 | Ixys Corporation | Irradiation and annealing of semiconductor devices for improved device characteristics |
WO1992009099A1 (en) * | 1990-11-14 | 1992-05-29 | Robert Bosch Gmbh | Method of manufacturing semiconductor elements, in particular diodes |
US5466303A (en) * | 1994-03-25 | 1995-11-14 | Nippondenso Co., Ltd. | Semiconductor device and manufacturing method therefor |
EP0889509A2 (en) * | 1997-06-30 | 1999-01-07 | Harris Corporation | Lifetime control for semiconductor devices |
JP2008211148A (en) * | 2007-02-28 | 2008-09-11 | Fuji Electric Device Technology Co Ltd | Semiconductor device and manufacturing method thereof |
US20090185316A1 (en) * | 2008-01-21 | 2009-07-23 | Jens Schneider | ESD/EOS Performance by Introduction of Defects |
US20110042576A1 (en) * | 2009-08-20 | 2011-02-24 | Icemos Technology Ltd. | Direct wafer-bonded through-hole photodiode |
Non-Patent Citations (2)
Title |
---|
DUSSAULT H ET AL: "High energy heavy-ion-induced single event transients in epitaxial structures", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 41, no. 6, 1 December 1994 (1994-12-01), pages 2018 - 2025, XP011386325, ISSN: 0018-9499, DOI: 10.1109/23.340537 * |
See also references of WO2013028973A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP2748846A4 (en) | 2015-11-11 |
WO2013081694A2 (en) | 2013-06-06 |
EP2748848A1 (en) | 2014-07-02 |
WO2013028976A1 (en) | 2013-02-28 |
WO2013028986A1 (en) | 2013-02-28 |
WO2013028973A1 (en) | 2013-02-28 |
EP2748845A4 (en) | 2015-07-08 |
WO2013028988A1 (en) | 2013-02-28 |
EP2748847A4 (en) | 2016-06-01 |
EP2748845A1 (en) | 2014-07-02 |
EP2748849A2 (en) | 2014-07-02 |
EP2748849A4 (en) | 2015-12-16 |
EP2748847A1 (en) | 2014-07-02 |
EP2748844A4 (en) | 2015-11-04 |
EP2748844A1 (en) | 2014-07-02 |
WO2013028983A1 (en) | 2013-02-28 |
EP2748846A1 (en) | 2014-07-02 |
WO2013081694A3 (en) | 2013-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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17P | Request for examination filed |
Effective date: 20140324 |
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AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
DAX | Request for extension of the european patent (deleted) | ||
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 27/092 20060101ALN20150202BHEP Ipc: H01L 27/088 20060101ALN20150202BHEP Ipc: H01L 29/32 20060101ALI20150202BHEP Ipc: H01L 29/868 20060101ALI20150202BHEP Ipc: H01L 21/18 20060101AFI20150202BHEP Ipc: H01L 21/329 20060101ALI20150202BHEP Ipc: H01L 21/8238 20060101ALI20150202BHEP |
|
RA4 | Supplementary search report drawn up and despatched (corrected) |
Effective date: 20150512 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/329 20060101ALI20150506BHEP Ipc: H01L 21/18 20060101AFI20150506BHEP Ipc: H01L 27/088 20060101ALN20150506BHEP Ipc: H01L 29/868 20060101ALI20150506BHEP Ipc: H01L 29/32 20060101ALI20150506BHEP Ipc: H01L 27/092 20060101ALN20150506BHEP Ipc: H01L 21/8238 20060101ALI20150506BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20180301 |