WO2013081694A3 - Wafer structure for electronic integrated circuit manufacturing - Google Patents

Wafer structure for electronic integrated circuit manufacturing Download PDF

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Publication number
WO2013081694A3
WO2013081694A3 PCT/US2012/052264 US2012052264W WO2013081694A3 WO 2013081694 A3 WO2013081694 A3 WO 2013081694A3 US 2012052264 W US2012052264 W US 2012052264W WO 2013081694 A3 WO2013081694 A3 WO 2013081694A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer structure
wafer
integrated circuit
circuit manufacturing
electronic integrated
Prior art date
Application number
PCT/US2012/052264
Other languages
French (fr)
Other versions
WO2013081694A2 (en
Inventor
David B. Kerwin
Joseph M. Benedetto
Original Assignee
Aeroflex Colorado Springs Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/218,273 external-priority patent/US9378955B2/en
Priority claimed from US13/218,345 external-priority patent/US20130049175A1/en
Priority claimed from US13/218,352 external-priority patent/US20130049178A1/en
Priority claimed from US13/218,335 external-priority patent/US9312133B2/en
Priority claimed from US13/218,308 external-priority patent/US9396947B2/en
Priority claimed from US13/218,292 external-priority patent/US9378956B2/en
Application filed by Aeroflex Colorado Springs Inc. filed Critical Aeroflex Colorado Springs Inc.
Priority to EP12854047.3A priority Critical patent/EP2748849A4/en
Publication of WO2013081694A2 publication Critical patent/WO2013081694A2/en
Publication of WO2013081694A3 publication Critical patent/WO2013081694A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Abstract

A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.
PCT/US2012/052264 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing WO2013081694A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP12854047.3A EP2748849A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US13/218,292 2011-08-25
US13/218,308 2011-08-25
US13/218,352 2011-08-25
US13/218,273 2011-08-25
US13/218,273 US9378955B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,345 2011-08-25
US13/218,335 2011-08-25
US13/218,345 US20130049175A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,352 US20130049178A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,335 US9312133B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,308 US9396947B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,292 US9378956B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing

Publications (2)

Publication Number Publication Date
WO2013081694A2 WO2013081694A2 (en) 2013-06-06
WO2013081694A3 true WO2013081694A3 (en) 2013-10-24

Family

ID=47746901

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/US2012/052280 WO2013028976A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052269 WO2013028973A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052264 WO2013081694A2 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052299 WO2013028986A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052293 WO2013028983A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052302 WO2013028988A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Family Applications Before (2)

Application Number Title Priority Date Filing Date
PCT/US2012/052280 WO2013028976A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052269 WO2013028973A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Family Applications After (3)

Application Number Title Priority Date Filing Date
PCT/US2012/052299 WO2013028986A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052293 WO2013028983A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052302 WO2013028988A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Country Status (2)

Country Link
EP (6) EP2748849A4 (en)
WO (6) WO2013028976A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2996152B1 (en) * 2014-09-15 2017-03-15 ABB Schweiz AG High frequency power diode and method for manufacturing the same
DE102017002935A1 (en) * 2017-03-24 2018-09-27 3-5 Power Electronics GmbH III-V semiconductor diode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US6346460B1 (en) * 1999-03-30 2002-02-12 Seh-America Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
US20070141794A1 (en) * 2005-10-14 2007-06-21 Silicon Space Technology Corporation Radiation hardened isolation structures and fabrication methods
US20070148422A1 (en) * 2005-12-20 2007-06-28 Hans-Joachim Schulze Semiconductor Wafer Substrate For Power Semiconductor Components And Method For Producing The Same
KR20090106828A (en) * 2008-04-07 2009-10-12 삼성전자주식회사 Wafer bonding method and bonded wafer structure using the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
DE3435464A1 (en) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Rectifier diode
JP2579979B2 (en) * 1987-02-26 1997-02-12 株式会社東芝 Method for manufacturing semiconductor device
JPH07107935B2 (en) * 1988-02-04 1995-11-15 株式会社東芝 Semiconductor device
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
DE4036222A1 (en) * 1990-11-14 1992-05-21 Bosch Gmbh Robert METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS, IN PARTICULAR DIODES
JPH07263721A (en) * 1994-03-25 1995-10-13 Nippondenso Co Ltd Semiconductor device and manufacture thereof
US5541122A (en) * 1995-04-03 1996-07-30 Motorola Inc. Method of fabricating an insulated-gate bipolar transistor
US6054369A (en) * 1997-06-30 2000-04-25 Intersil Corporation Lifetime control for semiconductor devices
US6027956A (en) * 1998-02-05 2000-02-22 Integration Associates, Inc. Process for producing planar dielectrically isolated high speed pin photodiode
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
DE60141096D1 (en) * 2000-04-11 2010-03-11 Boeing Co Processing system with majority decision
US7518218B2 (en) * 2005-03-03 2009-04-14 Aeroflex Colorado Springs, Inc. Total ionizing dose suppression transistor architecture
US7566951B2 (en) * 2006-04-21 2009-07-28 Memc Electronic Materials, Inc. Silicon structures with improved resistance to radiation events
JP5320679B2 (en) * 2007-02-28 2013-10-23 富士電機株式会社 Semiconductor device and manufacturing method thereof
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
JP2011044717A (en) * 2009-08-20 2011-03-03 Icemos Technology Ltd Direct wafer-bonded through-hole photodiode
US8288798B2 (en) * 2010-02-10 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Step doping in extensions of III-V family semiconductor devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US6346460B1 (en) * 1999-03-30 2002-02-12 Seh-America Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
US20070141794A1 (en) * 2005-10-14 2007-06-21 Silicon Space Technology Corporation Radiation hardened isolation structures and fabrication methods
US20070148422A1 (en) * 2005-12-20 2007-06-28 Hans-Joachim Schulze Semiconductor Wafer Substrate For Power Semiconductor Components And Method For Producing The Same
KR20090106828A (en) * 2008-04-07 2009-10-12 삼성전자주식회사 Wafer bonding method and bonded wafer structure using the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2748849A4 *

Also Published As

Publication number Publication date
EP2748849A2 (en) 2014-07-02
WO2013028988A1 (en) 2013-02-28
WO2013028983A1 (en) 2013-02-28
WO2013028986A1 (en) 2013-02-28
EP2748844A4 (en) 2015-11-04
EP2748846A4 (en) 2015-11-11
EP2748848A1 (en) 2014-07-02
EP2748849A4 (en) 2015-12-16
WO2013028973A1 (en) 2013-02-28
EP2748844A1 (en) 2014-07-02
EP2748845A4 (en) 2015-07-08
EP2748846A1 (en) 2014-07-02
EP2748847A4 (en) 2016-06-01
EP2748847A1 (en) 2014-07-02
WO2013028976A1 (en) 2013-02-28
EP2748848A4 (en) 2015-06-10
EP2748845A1 (en) 2014-07-02
WO2013081694A2 (en) 2013-06-06

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