EP2748846A4 - Wafer structure for electronic integrated circuit manufacturing - Google Patents

Wafer structure for electronic integrated circuit manufacturing

Info

Publication number
EP2748846A4
EP2748846A4 EP12825811.8A EP12825811A EP2748846A4 EP 2748846 A4 EP2748846 A4 EP 2748846A4 EP 12825811 A EP12825811 A EP 12825811A EP 2748846 A4 EP2748846 A4 EP 2748846A4
Authority
EP
European Patent Office
Prior art keywords
integrated circuit
circuit manufacturing
wafer structure
electronic integrated
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12825811.8A
Other languages
German (de)
French (fr)
Other versions
EP2748846A1 (en
Inventor
David B Kerwin
Joseph M Benedetto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cobham Colorado Springs Inc
Original Assignee
Aeroflex Colorado Springs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/218,273 external-priority patent/US9378955B2/en
Priority claimed from US13/218,308 external-priority patent/US9396947B2/en
Priority claimed from US13/218,335 external-priority patent/US9312133B2/en
Priority claimed from US13/218,352 external-priority patent/US20130049178A1/en
Priority claimed from US13/218,292 external-priority patent/US9378956B2/en
Priority claimed from US13/218,345 external-priority patent/US20130049175A1/en
Application filed by Aeroflex Colorado Springs Inc filed Critical Aeroflex Colorado Springs Inc
Publication of EP2748846A1 publication Critical patent/EP2748846A1/en
Publication of EP2748846A4 publication Critical patent/EP2748846A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
EP12825811.8A 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing Withdrawn EP2748846A4 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13/218,273 US9378955B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,308 US9396947B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,335 US9312133B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,352 US20130049178A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,292 US9378956B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,345 US20130049175A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052280 WO2013028976A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Publications (2)

Publication Number Publication Date
EP2748846A1 EP2748846A1 (en) 2014-07-02
EP2748846A4 true EP2748846A4 (en) 2015-11-11

Family

ID=47746901

Family Applications (6)

Application Number Title Priority Date Filing Date
EP12854047.3A Withdrawn EP2748849A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12825109.7A Withdrawn EP2748844A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12826508.9A Withdrawn EP2748848A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12825755.7A Withdrawn EP2748845A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12825811.8A Withdrawn EP2748846A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12826159.1A Withdrawn EP2748847A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Family Applications Before (4)

Application Number Title Priority Date Filing Date
EP12854047.3A Withdrawn EP2748849A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12825109.7A Withdrawn EP2748844A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12826508.9A Withdrawn EP2748848A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
EP12825755.7A Withdrawn EP2748845A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP12826159.1A Withdrawn EP2748847A4 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Country Status (2)

Country Link
EP (6) EP2748849A4 (en)
WO (6) WO2013028986A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2996152B1 (en) * 2014-09-15 2017-03-15 ABB Schweiz AG High frequency power diode and method for manufacturing the same
DE102017002935A1 (en) * 2017-03-24 2018-09-27 3-5 Power Electronics GmbH III-V semiconductor diode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992009099A1 (en) * 1990-11-14 1992-05-29 Robert Bosch Gmbh Method of manufacturing semiconductor elements, in particular diodes
EP1146423A2 (en) * 2000-04-11 2001-10-17 The Boeing Company Voted processing system
US20070249136A1 (en) * 2006-04-21 2007-10-25 Seacrist Michael R Silicon structures with improved resistance to radiation events

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
DE3435464A1 (en) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Rectifier diode
JP2579979B2 (en) * 1987-02-26 1997-02-12 株式会社東芝 Method for manufacturing semiconductor device
JPH07107935B2 (en) * 1988-02-04 1995-11-15 株式会社東芝 Semiconductor device
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
JPH07263721A (en) * 1994-03-25 1995-10-13 Nippondenso Co Ltd Semiconductor device and manufacture thereof
US5541122A (en) * 1995-04-03 1996-07-30 Motorola Inc. Method of fabricating an insulated-gate bipolar transistor
US6054369A (en) * 1997-06-30 2000-04-25 Intersil Corporation Lifetime control for semiconductor devices
US6027956A (en) * 1998-02-05 2000-02-22 Integration Associates, Inc. Process for producing planar dielectrically isolated high speed pin photodiode
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
US6346460B1 (en) * 1999-03-30 2002-02-12 Seh-America Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
US7518218B2 (en) * 2005-03-03 2009-04-14 Aeroflex Colorado Springs, Inc. Total ionizing dose suppression transistor architecture
US8278719B2 (en) * 2005-10-14 2012-10-02 Silicon Space Technology Corp. Radiation hardened isolation structures and fabrication methods
DE102005061263B4 (en) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Semiconductor wafer substrate for power semiconductor devices and method of making the same
JP5320679B2 (en) * 2007-02-28 2013-10-23 富士電機株式会社 Semiconductor device and manufacturing method thereof
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
KR20090106828A (en) * 2008-04-07 2009-10-12 삼성전자주식회사 Wafer bonding method and bonded wafer structure using the same
JP2011044717A (en) * 2009-08-20 2011-03-03 Icemos Technology Ltd Direct wafer-bonded through-hole photodiode
US8288798B2 (en) * 2010-02-10 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Step doping in extensions of III-V family semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992009099A1 (en) * 1990-11-14 1992-05-29 Robert Bosch Gmbh Method of manufacturing semiconductor elements, in particular diodes
EP1146423A2 (en) * 2000-04-11 2001-10-17 The Boeing Company Voted processing system
US20070249136A1 (en) * 2006-04-21 2007-10-25 Seacrist Michael R Silicon structures with improved resistance to radiation events

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DODD P E ET AL: "Current and Future Challenges in Radiation Effects on CMOS Electronics", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 57, no. 4, 1 August 2010 (2010-08-01), pages 1747 - 1763, XP011316793, ISSN: 0018-9499 *
KERNS S E ET AL: "THE DESIGN OF RADIATION-HARDENED ICS FOR SPACE: A COMPENDIUM OF APPROACHES", PROCEEDINGS OF THE IEEE, IEEE. NEW YORK, US, vol. 76, no. 11, 1 November 1988 (1988-11-01), pages 1470 - 1509, XP000100554, ISSN: 0018-9219, DOI: 10.1109/5.90115 *
See also references of WO2013028976A1 *
SROUR J R ET AL: "RADIATION EFFECTS ON MICROELECTRONICS IN SPACE", PROCEEDINGS OF THE IEEE, IEEE. NEW YORK, US, vol. 76, no. 11, 1 November 1988 (1988-11-01), pages 1443 - 1469, XP000100853, ISSN: 0018-9219, DOI: 10.1109/5.90114 *

Also Published As

Publication number Publication date
EP2748846A1 (en) 2014-07-02
EP2748849A4 (en) 2015-12-16
WO2013028973A1 (en) 2013-02-28
WO2013081694A3 (en) 2013-10-24
WO2013028983A1 (en) 2013-02-28
WO2013028988A1 (en) 2013-02-28
EP2748847A1 (en) 2014-07-02
WO2013081694A2 (en) 2013-06-06
WO2013028986A1 (en) 2013-02-28
EP2748847A4 (en) 2016-06-01
EP2748848A4 (en) 2015-06-10
EP2748849A2 (en) 2014-07-02
EP2748844A1 (en) 2014-07-02
EP2748848A1 (en) 2014-07-02
WO2013028976A1 (en) 2013-02-28
EP2748845A1 (en) 2014-07-02
EP2748844A4 (en) 2015-11-04
EP2748845A4 (en) 2015-07-08

Similar Documents

Publication Publication Date Title
EP2716149A4 (en) Fluid-cooled module for integrated circuit devices
EP2764538A4 (en) High power semiconductor electronic components with increased reliability
EP2760264A4 (en) Electronic circuit component mounter
EP2725609A4 (en) Semiconductor module
EP2797112A4 (en) Semiconductor module
EP2750184A4 (en) Semiconductor module
EP2717305A4 (en) Integrated circuit inspection device
EP2698684A4 (en) Semiconductor integrated circuit
TWI561832B (en) Semiconductor integrated circuit
EP2760121A4 (en) Electronic circuit
EP2661156A4 (en) Circuit board for semiconductor module
GB2489508B8 (en) Improvements for electrical circuits
SG2014002612A (en) Device for cleaning an encapsulating device for electronic components
EP2736067A4 (en) Method for manufacturing semiconductor device
EP2699065A4 (en) Circuit substrate
EP2688100A4 (en) Semiconductor module and manufacturing method therefor
SG11201402006SA (en) Member for semiconductor manufacturing device
EP2790225A4 (en) Method for manufacturing semiconductor device
EP2754168A4 (en) Methods for manufacturing integrated circuit devices having features with reduced edge curvature
GB2477492B (en) Integrated circuit package
EP2680278A4 (en) Mounting structure for electronic components
EP2787526A4 (en) Semiconductor device fabrication method
PL2590275T3 (en) Circuit positioning device
TWI560986B (en) Integrated circuit
GB2497664B (en) Substrates for semiconductor devices

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20140324

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 27/092 20060101ALN20150605BHEP

Ipc: H01L 21/329 20060101ALI20150605BHEP

Ipc: H01L 27/088 20060101ALN20150605BHEP

Ipc: H01L 29/32 20060101ALI20150605BHEP

Ipc: H01L 21/18 20060101AFI20150605BHEP

Ipc: H01L 29/868 20060101ALI20150605BHEP

Ipc: H01L 21/8238 20060101ALI20150605BHEP

RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20151008

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/32 20060101ALI20151002BHEP

Ipc: H01L 29/868 20060101ALI20151002BHEP

Ipc: H01L 21/8238 20060101ALI20151002BHEP

Ipc: H01L 21/18 20060101AFI20151002BHEP

Ipc: H01L 21/329 20060101ALI20151002BHEP

Ipc: H01L 27/088 20060101ALN20151002BHEP

Ipc: H01L 27/092 20060101ALN20151002BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20180301