FR2445021A1 - Procede de fabrication de dispositifs semi-conducteurs reduisant leur temps de commutation par une irradiation par neutrons - Google Patents

Procede de fabrication de dispositifs semi-conducteurs reduisant leur temps de commutation par une irradiation par neutrons

Info

Publication number
FR2445021A1
FR2445021A1 FR7931303A FR7931303A FR2445021A1 FR 2445021 A1 FR2445021 A1 FR 2445021A1 FR 7931303 A FR7931303 A FR 7931303A FR 7931303 A FR7931303 A FR 7931303A FR 2445021 A1 FR2445021 A1 FR 2445021A1
Authority
FR
France
Prior art keywords
switching time
semiconductor devices
manufacturing semiconductor
neutron irradiation
devices reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7931303A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2445021A1 publication Critical patent/FR2445021A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

Le temps de commutation de certains dispositifs semi-conducteurs 10 est diminé tout en maintenant les autres caractéristiques électriques de ces dispositifs en les irradiant avec une source de radiation de neutrons 23 d'énergie supérieure à 1 Mev, à un dosage compris entre 1 x 10**11 et 1 x 10**15 neutrons par cm**2 (de preférence entre 1 x 10**11 et 1 x 10**15 neutrons par cm**2 avec une énergie supérieure à 14 Mev). Les dispositifs sont aussi recuits, pendant et/ou à la suite de l'irradiation, à une température plus élevée que la plus haute température spécifiée d'utilisation ou stockage (de préférence d'au moins 50 degrés C).
FR7931303A 1978-12-22 1979-12-20 Procede de fabrication de dispositifs semi-conducteurs reduisant leur temps de commutation par une irradiation par neutrons Withdrawn FR2445021A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/972,302 US4240844A (en) 1978-12-22 1978-12-22 Reducing the switching time of semiconductor devices by neutron irradiation

Publications (1)

Publication Number Publication Date
FR2445021A1 true FR2445021A1 (fr) 1980-07-18

Family

ID=25519487

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7931303A Withdrawn FR2445021A1 (fr) 1978-12-22 1979-12-20 Procede de fabrication de dispositifs semi-conducteurs reduisant leur temps de commutation par une irradiation par neutrons

Country Status (8)

Country Link
US (1) US4240844A (fr)
JP (1) JPS5588338A (fr)
BE (1) BE880836A (fr)
BR (1) BR7908365A (fr)
CA (1) CA1131368A (fr)
DE (1) DE2951925A1 (fr)
FR (1) FR2445021A1 (fr)
GB (1) GB2038092A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328610A (en) * 1980-04-25 1982-05-11 Burroughs Corporation Method of reducing alpha-particle induced errors in an integrated circuit
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
JPS5950531A (ja) * 1982-09-16 1984-03-23 Toshiba Corp 半導体装置及びその製造方法
JPS6068621A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
US4684413A (en) * 1985-10-07 1987-08-04 Rca Corporation Method for increasing the switching speed of a semiconductor device by neutron irradiation
DE3714357C2 (de) * 1986-04-30 1994-02-03 Toshiba Ceramics Co Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung
DE3639835A1 (de) * 1986-11-21 1987-04-30 Corneliu Dipl Phys Protop Verfahren zur herstellung von hochgeschwindigkeitshalbleitern
DE59003052D1 (de) * 1989-05-18 1993-11-18 Asea Brown Boveri Halbleiterbauelement.
US5784424A (en) * 1994-09-30 1998-07-21 The United States Of America As Represented By The United States Department Of Energy System for studying a sample of material using a heavy ion induced mass spectrometer source
US9378956B2 (en) 2011-08-25 2016-06-28 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
WO2013028976A1 (fr) * 2011-08-25 2013-02-28 Aeroflex Colorado Springs Inc. Structure de tranche pour la fabrication de circuits intégrés électroniques
US9378955B2 (en) 2011-08-25 2016-06-28 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US9396947B2 (en) 2011-08-25 2016-07-19 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US9312133B2 (en) 2011-08-25 2016-04-12 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1948884B2 (de) * 1969-09-27 1971-09-30 Verfahren zum beseitigen von inversionsschichten
US3769693A (en) * 1971-07-16 1973-11-06 Martin Marietta Corp Process for preparing nuclear hardened semiconductor and microelectronic devices
US3840887A (en) * 1972-08-25 1974-10-08 Westinghouse Electric Corp Selective irradiation of gated semiconductor devices to control gate sensitivity
US3872493A (en) * 1972-08-25 1975-03-18 Westinghouse Electric Corp Selective irradiation of junctioned semiconductor devices
US3852612A (en) * 1972-08-31 1974-12-03 Westinghouse Electric Corp Selective low level irradiation to improve blocking voltage yield of junctioned semiconductors
US3881963A (en) * 1973-01-18 1975-05-06 Westinghouse Electric Corp Irradiation for fast switching thyristors
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices
US3809582A (en) * 1973-03-08 1974-05-07 Westinghouse Electric Corp Irradiation for fast recovery of high power junction diodes
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US3877997A (en) * 1973-03-20 1975-04-15 Westinghouse Electric Corp Selective irradiation for fast switching thyristor with low forward voltage drop
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
US4076555A (en) * 1976-05-17 1978-02-28 Westinghouse Electric Corporation Irradiation for rapid turn-off reverse blocking diode thyristor
US4135951A (en) * 1977-06-13 1979-01-23 Monsanto Company Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials

Also Published As

Publication number Publication date
CA1131368A (fr) 1982-09-07
JPS5588338A (en) 1980-07-04
GB2038092A (en) 1980-07-16
BR7908365A (pt) 1980-08-26
US4240844A (en) 1980-12-23
BE880836A (fr) 1980-06-23
DE2951925A1 (de) 1980-07-10

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Legal Events

Date Code Title Description
AR Application made for restoration
DO Appeal for restoration rejected
ST Notification of lapse