JPS5577183A - Photosensitive type semiconductor device - Google Patents

Photosensitive type semiconductor device

Info

Publication number
JPS5577183A
JPS5577183A JP15164278A JP15164278A JPS5577183A JP S5577183 A JPS5577183 A JP S5577183A JP 15164278 A JP15164278 A JP 15164278A JP 15164278 A JP15164278 A JP 15164278A JP S5577183 A JPS5577183 A JP S5577183A
Authority
JP
Japan
Prior art keywords
scr
joints
reaction
transistor
side gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15164278A
Other languages
Japanese (ja)
Other versions
JPS6148786B2 (en
Inventor
Yutaka Waki
Tomonobu Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15164278A priority Critical patent/JPS5577183A/en
Publication of JPS5577183A publication Critical patent/JPS5577183A/en
Publication of JPS6148786B2 publication Critical patent/JPS6148786B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To improve dv/dt, by heightening photosensitivity by exposing more than 3 joints of 6-layer structure composed of pnpnpn.
CONSTITUTION: When light is radiated over to p1n1p2n2, electron-positive hole pairs occur to all the joints J1∼J3 of SCR 1 and to anode-side gate joint J3 of SCR2 and the SCR 1 and the SCR 2 are turned ON at the same time by the reaction. On the other hand, as to dv/dt, as cathode-side gate layer p2n2 of the SCR 2, current amplification factors of n1p2n2 transistor and p2n2p3 transistor become lower extremely and control the reaction, and further, the SCR 1 and the SCR 2 become connected in series, and therefore, the joining capacity Cj becomes small. As a result, dv/dt becomes to have an extremely high resisting capacity. This mechanism makes it possible to obtain a high-capability photothyrister.
COPYRIGHT: (C)1980,JPO&Japio
JP15164278A 1978-12-07 1978-12-07 Photosensitive type semiconductor device Granted JPS5577183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15164278A JPS5577183A (en) 1978-12-07 1978-12-07 Photosensitive type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15164278A JPS5577183A (en) 1978-12-07 1978-12-07 Photosensitive type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5577183A true JPS5577183A (en) 1980-06-10
JPS6148786B2 JPS6148786B2 (en) 1986-10-25

Family

ID=15523011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15164278A Granted JPS5577183A (en) 1978-12-07 1978-12-07 Photosensitive type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5577183A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009300206A (en) * 2008-06-12 2009-12-24 Murata Mfg Co Ltd Ultraviolet sensor
JP2010087482A (en) * 2008-09-08 2010-04-15 Murata Mfg Co Ltd Ultraviolet sensor and method of manufacturing same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62254177A (en) * 1986-04-28 1987-11-05 中松　義郎 Mental concentrator
JPH0159184U (en) * 1987-10-08 1989-04-13
JPH0460288U (en) * 1990-10-02 1992-05-22
JPH04241894A (en) * 1991-01-14 1992-08-28 Sega Enterp Ltd Television game machine mounted on head part

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009300206A (en) * 2008-06-12 2009-12-24 Murata Mfg Co Ltd Ultraviolet sensor
JP2010087482A (en) * 2008-09-08 2010-04-15 Murata Mfg Co Ltd Ultraviolet sensor and method of manufacturing same

Also Published As

Publication number Publication date
JPS6148786B2 (en) 1986-10-25

Similar Documents

Publication Publication Date Title
JPS5279679A (en) Semiconductor memory device
JPS5577183A (en) Photosensitive type semiconductor device
JPS5545276A (en) Gate circuit of gate turn-off thyristor
JPS51142983A (en) Scr
JPS54113051A (en) Integrating circuit of time-limit relay
JPS535574A (en) Manufacture of semiconductor device
JPS532089A (en) Semiconductor switching unit
JPS52116054A (en) Amplifier circuit
JPS5375430A (en) Inverse conduction gto rectifler
JPS53978A (en) Measuring method for turnoff characteristics
JPS558622A (en) Semiconductor integrated circuit device
JPS52149322A (en) Soft starting circuit of commutation circuit
JPS5391589A (en) Semiconductor device
JPS54101287A (en) Electronic circuit
JPS5297681A (en) Semiconductor power circuit
JPS5383478A (en) Reverse conducting thyristor
JPS5457973A (en) Semiconductor device for switching control
JPS5335361A (en) Gate trigger circuit of thyristor
JPS5372576A (en) Insulator gate type field effect transistor
JPS5435683A (en) Manufacture of semiconductor device
JPS53136468A (en) Triggering method of gate controlled semiconductor element
JPS5353984A (en) Semiconductor device
JPS5271621A (en) Static type power converter
JPS5362485A (en) Thyristor
JPS5715291A (en) Semiconductor rom device